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IEEE Transactions on Electron Devices, ISSN 0018-9383, 06/2014, Volume 61, Issue 6, pp. 2049 - 2055
Growing good quality III-V epitaxial layers on Si substrate is of utmost importance to produce next generation high-performance devices in a cost effective... 
Temperature | Photonic band gap | Esaki diode | negative differential resistance | Tunneling | excess current | epi defect density | Silicon | III-V on Si | Current density | Stress | Substrates | Tunnel diodes | Usage | Research | Electric currents | Analysis | Epitaxy | Molecular beam epitaxy | Epitaxial layers | Valleys | Silicon substrates | Mathematical models | Devices | Density | Defects
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 06/2014, Volume 61, Issue 6, pp. 1963 - 1971
We report the demonstration of a novel ZnS-SiO 2 liner stressor to enhance drive current in Si n-channel FinFETs (N-FinFETs). ZnS-SiO 2 expands during thermal... 
liner stressor | Tensile stress | Annealing | n-channel FinFET (N-FinFET) | ZnS-SiO | Logic gates | FinFETs | Silicon | multigate FET | Expansion | Strain | Metal oxide semiconductor field effect transistors | Silicon compounds | Thermal properties | Research | Stress analysis (Engineering) | Nanotechnology | Crystallites | Aluminum | Drains | Wrapping | Channels | Liners | Silicon dioxide
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 06/2014, Volume 61, Issue 6, pp. 2049 - 2055
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 06/2014, Volume 61, Issue 6, pp. 1963 - 1971
Journal Article
Journal of Clinical Oncology, ISSN 0732-183X, 03/2017, Volume 35, Issue 7_suppl, pp. 136 - 136
136 Background: Checkpoint inhibitors (CPI) have transformed melanoma treatment but many patients remain refractory. CPI plus i.t. IMO may improve response by... 
Journal Article
02/2019
JHEP 05 (2019) 088 This paper presents the combinations of single-top-quark production cross-section measurements by the ATLAS and CMS Collaborations, using... 
Physics - High Energy Physics - Experiment
Journal Article
Physics Letters B, ISSN 0370-2693, 11/2016, Volume 770, p. 357
Phys. Lett. B 770 (2017) 357 The production yields of Upsilon(1S), Upsilon(2S), and Upsilon(3S) quarkonium states are measured through their decays into muon... 
Physics - Nuclear Experiment | Nuclear Experiment | Physics
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 05/2013, Volume 60, Issue 5, pp. 1640 - 1648
We report a novel common gate-stack solution for In 0.7 Ga 0.3 As n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) and Ge 0.97 Sn 0.03... 
{\rm Si}_{2}{\rm H}_{6} passivation | InGaAs nMOSFET | GeSn pMOSFET | Logic gates | Charge carrier processes | MOSFETs | Passivation | passivation
Journal Article
11/2016
Nucl. Phys. B 918 (2017) 257 The dynamics of isolated-photon plus one-, two- and three-jet production in $pp$ collisions at a centre-of-mass energy of 8 TeV... 
Physics - High Energy Physics - Experiment
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2008, Volume 55, Issue 3, pp. 850 - 857
A novel-channel MOS transistor with a silicon-germanium (SiGe) heterostructure embedded beneath the channel and silicon-carbon source/drain (Si:C S/D)... 
Performance evaluation | strain-transfer structure (STS) | Tensile strain | Lateral tensile strain | Logic gates | Silicon | {\rm n} -MOSFET | Transistors | silicon-carbon (Si:C) | Silicon germanium | Strain | Semiconductor devices | Drains | Mathematical models | Devices | Channels | Silicon germanides
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 04/2007, Volume 28, Issue 4, pp. 258 - 260
For the first time, we demonstrate experimentally that by using HfLaO high-kappa gate dielectric, the flat-band voltage (V fb ) and the threshold voltage (Vth)... 
Fermi-level pinning | metal gate (MG) | Annealing | high- kappa (HK) dielectric | Hafnium oxide | CMOS process | Microelectronics | Sun | MOS devices | CMOS | work function | CMOS technology | Threshold voltage | HfLaO | Hafnium compounds | Dielectric devices | interfacial dipole | Drains | Voltage | Dielectrics | Devices | Gates | Guidelines
Journal Article
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 09/2013, Volume 60, Issue 9, pp. 2703 - 2711
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 12/2006, Volume 53, Issue 12, pp. 3001 - 3011
Fast component of V th instability in MOSFET with HfO 2 gate dielectric is systematically measured and characterized. A charge-trapping/detrapping model is... 
digital circuits | CMOSFETs | static random access memory (SRAM) | trapping | reliability
Journal Article
01/2019
Phys. Rev. C 100 (2019) 034903 This paper presents a measurement of forward-forward and forward-central dijet azimuthal angular correlations and conditional... 
Journal Article
2018
Epithelial ovarian cancer is the deadliest gynaecological cancer: most women die within five years of their diagnoses. Moreover, survival of women with ovarian... 
RM Therapeutics. Pharmacology | RG Gynecology and obstetrics
Dissertation
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