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Applied Physics Letters, ISSN 0003-6951, 08/2019, Volume 115, Issue 7
Nonvolatile and reversible capacitance changes are demonstrated in a floating-gate metal-oxide-semiconductor (FG-MOS) capacitor with a... 
Memory devices | Electrical properties | Capacitors | Crosstalk | Immunity | Floating structures | MOSFETs | Metal oxides | Silver | Programmable logic devices | Platinum | Electrical charging | Rupturing | Capacitance | Threshold voltage
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 05/2019, pp. 655 - 661
A reversible capacitance changes with respect to the polarity of applied voltage is demonstrated in a MOS (metal-oxide-semiconductor) capacitor consisting of a... 
Metal-oxide-semiconductor | Capacitance change | Indium-tin-oxide | Cerium oxide
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 05/2019, Volume 786, p. 655
A reversible capacitance changes with respect to the polarity of applied voltage is demonstrated in a MOS (metal-oxide-semiconductor) capacitor consisting of a... 
Circuit components | Electronic components industry | Capacitors | Cerium | Indium
Journal Article
Nanotechnology, ISSN 0957-4484, 05/2018, Volume 29, Issue 29, p. 295201
We report a variety of synaptic behaviors in a thin-film transistor (TFT) with a metal-oxide-semiconductor gate stack that has a Pt/HfO /n-type... 
hafnium oxide | IGZO | drain current modulation | synaptic behaviors | synaptic transistor
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2019, Volume 114, Issue 9
A controllable and reversible transition of volatile and non-volatile resistive switching is presented in Ag/indium-gallium-zinc oxide (IGZO)/manganese oxide... 
Memory devices | Silver | Gallium | Manganese oxides | Indium gallium zinc oxide | Stability | Compliance | Platinum | Random access memory | Data storage | Zinc oxide | Switching
Journal Article
Nanotechnology, ISSN 0957-4484, 01/2019, Volume 30, Issue 2, p. 025203
We demonstrate single- and double-gate synaptic operations of a thin-film transistor (TFT) with double-gate stack consisting of an Al-top-gate/SiO /TaO /n-IGZO... 
IGZO | single-gate | tantalum oxide | double-gate | synaptic transistor
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2018, Volume 113, Issue 16
We demonstrate strong, analog, reversible, and nonvolatile memcapacitance in a Si-based MOS (metal-oxide-semiconductor) memcapacitor with an ITO... 
Metal oxides | Electric potential | Depletion | Semiconductor devices | Migration | Random access memory | Polarity | Silicon | Oxygen ions | Transistors
Journal Article
ISSN 0003-2654, 11/2018, Volume 143, Issue 23, pp. 5692 - 571
We fabricate a three-dimensional (3D) microdevice operated with minimal peripheral accessories, including a portable pump for semi-automated sample delivery... 
Journal Article
Applied Physics Letters, ISSN 0003-6951, 08/2019, Volume 115, Issue 7, p. 72106
Nonvolatile and reversible capacitance changes are demonstrated in a floating-gate metal-oxide-semiconductor (FG-MOS) capacitor with a... 
PHYSICS, APPLIED | TIME
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 04/2018, Volume 190, p. 7
The fabrication of 5 x 5 crossbar array with a line width of 20 μm was demonstrated. The resistive switching characteristics in the bilayer structure of... 
Ohmic | Emission analysis | Tantalum oxides | High resistance | Forming | Chemical compounds | Switching | Silver | Manganese oxides | Inorganic chemistry | Platinum | Behavior | Arrays
Journal Article
Journal of Lipid Research, ISSN 0022-2275, 11/2019, p. jlr.RA119000254
Journal Article
by Baek, H and Yoon, TS and Sun, GM and Shin, C
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, ISSN 0268-1242, 06/2019, Volume 34, Issue 6, p. 65022
We studied the effects of gamma-ray irradiation on the static and dynamic electrical characteristics of a trench-gate non-punch-through insulated gate bipolar... 
trench gate IGBT | PHYSICS, CONDENSED MATTER | IGBT | MATERIALS SCIENCE, MULTIDISCIPLINARY | gamma irradiation | DEVICES | total dose effects | insulated gate bipolar transistor | RADIATION | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Solar Energy Materials and Solar Cells, ISSN 0927-0248, 2009, Volume 93, Issue 8, pp. 1263 - 1267
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2018, Volume 113, Issue 16, p. 162102
We demonstrate strong, analog, reversible, and nonvolatile memcapacitance in a Si-based MOS (metal-oxide-semiconductor) memcapacitor with an ITO... 
PHYSICS, APPLIED | FILMS
Journal Article
by Jung, H and Kim, YH and Kim, J and Yoon, TS and Kang, CJ and Yoon, S and Lee, HH
ACS APPLIED MATERIALS & INTERFACES, ISSN 1944-8244, 10/2019, Volume 11, Issue 40, pp. 36807 - 36816
A threshold resistive switching (RS) device concurrently demonstrating analog memristive property with mesoporous silica-titania (m-ST) nanocomposites is... 
synaptic device | mesoporous silica-titania (m-ST) nanocomposite | analog memristive switching | soft templating | potentiation | MATERIALS SCIENCE, MULTIDISCIPLINARY | threshold effect | RESISTIVE SWITCHING CHARACTERISTICS | NANOSCIENCE & NANOTECHNOLOGY | depression
Journal Article
Nanotechnology, ISSN 0957-4484, 01/2018, Volume 29, Issue 3, p. 35202
Journal Article
Applied Physics Letters, ISSN 0003-6951, 02/2016, Volume 108, Issue 5
Memcapacitive characteristics were investigated in metal-oxide-semiconductor (MOS) structure of reactive electrode (Mo, Al) and hafnium oxide (HfO{sub X}) on... 
OXYGEN | PERMITTIVITY | ELECTRIC POTENTIAL | METALS | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS | OXYGEN IONS | SUBSTRATES | ELECTRODES | HAFNIUM OXIDES | SEMICONDUCTOR MATERIALS | CAPACITANCE | SILICON OXIDES
Journal Article
Applied Physics Letters, ISSN 0003-6951, 02/2016, Volume 108, Issue 5
Memcapacitive characteristics were investigated in metal-oxide-semiconductor (MOS) structure of reactive electrode (Mo, Al) and hafnium oxide (HfOX) on n-type... 
Metal oxides | Electrodes | Electric potential | Aluminum | Migration | Silicon substrates | Hafnium oxide | Capacitance | Oxygen ions | Molybdenum
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2010, Volume 96, Issue 13, pp. 133506 - 133506-3
The stability and efficiency of organic solar cells (OSCs) were improved using thermally stable fluorine-doped tin oxide (FTO) as the bottom electrode and... 
tin compounds | titanium compounds | buffer layers | electrochemical electrodes | diffusion | PHYSICS, APPLIED | doping | power conversion | charge exchange | silver | polymers | solar cells | fluorine
Journal Article
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