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IEEE Electron Device Letters, ISSN 0741-3106, 01/2012, Volume 33, Issue 1, pp. 4 - 4
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 01/2012, Volume 33, Issue 1, pp. 4 - 4
It has been a privilege to serve as the Editor-in- Chief of the IEEE Electron Device Letters (EDL) - a premier publication in the field of microelectronics,... 
Journal Article
IBM Journal of Research and Development, ISSN 0018-8646, 03/2002, Volume 46, Issue 2-3, pp. 213 - 222
Beginning with a brief review of CMOS scaling trends from 1 mum to 0.1 mum, this paper examines the fundamental factors that will ultimately limit CMOS scaling... 
COMPUTER SCIENCE, HARDWARE & ARCHITECTURE | MULTIDISCIPLINARY SCIENCES | MOSFETS | LENGTH | Complementary metal oxide semiconductors | Research | CMOS | Thermodynamics | Systems design | Electrons
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2016, Volume 63, Issue 8, pp. 3342 - 3345
This brief models the effect of lightly doped drain on the I ds -V gs and I ds -V ds characteristics of tunnel FETs. It is shown that an extended drain... 
TFETs | Photonic band gap | short-channel effect | Doping | tunnel FET (TFET) | Tunneling | Logic gates | band-to-band tunneling | Ambipolar effect | TUNNEL | PHYSICS, APPLIED | FETS | ENGINEERING, ELECTRICAL & ELECTRONIC | Usage | Research | Transistors | Electric currents | Degradation | Depletion | Tunnels (transportation) | Drains | Swing | Devices | Channels
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 09/2015, Volume 62, Issue 9, pp. 3019 - 3024
This paper investigates short-channel effects (SCEs) in double-gate tunnel FETs (TFETs) using an analytic model that includes depletion in the source. It is... 
Semiconductor device modeling | Analytical models | MOSFET | Band-to-band tunneling | Doping | tunnel FET (TFET) | Tunneling | Logic gates | Heterojunctions | short-channel effect (SCE) | TRANSISTORS | VOLTAGE | PHYSICS, APPLIED | DOUBLE-GATE | PERFORMANCE | LENGTH | MODEL | ENGINEERING, ELECTRICAL & ELECTRONIC | Usage | Functions | Research | Functional equations | Field-effect transistors
Journal Article
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 05/2015, Volume 62, Issue 5, pp. 1399 - 1404
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 02/2016, Volume 63, Issue 2, pp. 841 - 847
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2017, Volume 64, Issue 8, pp. 3511 - 3514
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 10/2009, Volume 56, Issue 10, pp. 2357 - 2362
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 02/2016, Volume 63, Issue 2, pp. 877 - 880
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 05/2010, Volume 31, Issue 5, pp. 431 - 433
This letter presents the design of a tunneling FET with III-V-based tunnel heterojunctions for operation in digital circuits with supply voltages as low as 0.3... 
Staggered heterojunction | Low voltage | Energy consumption | Tunneling | Heterojunctions | MOSFET circuits | Nanostructures | Microelectronics | III-V semiconductor materials | FETs | Digital circuits | tunneling FET | Tunneling FET | ENGINEERING, ELECTRICAL & ELECTRONIC | Leakage | Electric potential | Semiconductor devices | Voltage | Devices | Homojunctions
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 05/2011, Volume 32, Issue 5, pp. 583 - 583
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2016, Volume 63, Issue 1, p. 841
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 05/2010, Volume 31, Issue 5, pp. 383 - 383
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2010, Volume 31, Issue 3, pp. 179 - 179
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2010, Volume 31, Issue 3, pp. 178 - 178
Journal Article
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