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1. Full Text Electric-field-induced ferromagnetic resonance excitation in an ultrathin ferromagnetic metal layer
by Nozaki, Takayuki and Shiota, Yoichi and Miwa, Shinji and Murakami, Shinichi and Bonell, Frédéric and Ishibashi, Shota and Kubota, Hitoshi and Yakushiji, Kay and Saruya, Takeshi and Fukushima, Akio and Yuasa, Shinji and Shinjo, Teruya and Suzuki, Yoshishige
Nature Physics, ISSN 1745-2473, 06/2012, Volume 8, Issue 6, pp. 491 - 496
Using resonant phenomena to exert coherent control over electron spin dynamics could enable more-energy-efficient spintronic devices and related technologies.... 
SPIN-TRANSFER-TORQUE | MAGNETORESISTANCE | ROOM-TEMPERATURE | FILMS | PHYSICS, MULTIDISCIPLINARY | ATOMIC LAYERS | MAGNETIC TUNNEL-JUNCTIONS | DRIVEN | VECTOR | Thin films | Ferroelectrics | Electric fields | Electrons | Ferromagnetic resonance | Dynamics | Coherence | Ferromagnetism | Excitation | Devices | Electron spin
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2. Full Text Voltage controlled interfacial magnetism through platinum orbits
by Miwa, Shinji and Suzuki, Motohiro and Tsujikawa, Masahito and Matsuda, Kensho and Nozaki, Takayuki and Tanaka, Kazuhito and Tsukahara, Takuya and Nawaoka, Kohei and Goto, Minori and Kotani, Yoshinori and Ohkubo, Tadakatsu and Bonell, Frédéric and Tamura, Eiiti and Hono, Kazuhiro and Nakamura, Tetsuya and Shirai, Masafumi and Yuasa, Shinji and Suzuki, Yoshishige
Nature Communications, ISSN 2041-1723, 06/2017, Volume 8, Issue 1, p. 15848
Electric fields at interfaces exhibit useful phenomena, such as switching functions in transistors, through electron accumulations and/or electric dipole... 
ELECTRIC-FIELD CONTROL | TRANSITION | MICROSCOPIC ORIGIN | MOMENT | MAGNETIZATION REVERSAL | SPIN | MULTIDISCIPLINARY SCIENCES | MAGNETOCRYSTALLINE ANISOTROPY | DRIVEN | RAY CIRCULAR-DICHROISM | Memory devices | Energy use | Semiconductor devices | Data storage | Theoretical analysis | Iron | Quadrupoles | Electron spin | Condensed matter | Platinum | Magnetic anisotropy | Ferromagnetism | Electric fields | Absorption spectroscopy | Magnetic induction | Spectroscopy | Magnetic dipoles | Electric dipoles | Switching | Heavy metals | Interfaces | X rays | Anisotropy | Magnetism | Dipole moments | X-ray absorption spectroscopy | Transistors
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3. Tunnel Magnetoresistance Effect
by Shinji YUASA
Denki Gakkaishi = Journal of the Institute of Electrical Engineers of Japan, ISSN 1340-5551, 01/2019, Volume 139, Issue 9, p. 595
Tunnel magnetoresistance | Magnetoresistivity | Magnetoresistance
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4. Full Text Microwave amplification in a magnetic tunnel junction induced by heat-to-spin conversion at the nanoscale
by Goto, Minori and Wakatake, Yosuke and Oji, Ugwumsinachi Kalu and Miwa, Shinji and Strelkov, Nikita and Dieny, Bernard and Kubota, Hitoshi and Yakushiji, Kay and Fukushima, Akio and Yuasa, Shinji and Suzuki, Yoshishige
Nature Nanotechnology, ISSN 1748-3387, 01/2019, Volume 14, Issue 1, pp. 40 - 43
Heat-driven engines are hard to realize in nanoscale machines because of efficient heat dissipation(1). However, in the realm of spintronics, heat has been... 
MAGNETORESISTANCE | ROOM-TEMPERATURE | NANOSCIENCE & NANOTECHNOLOGY | MATERIALS SCIENCE, MULTIDISCIPLINARY | ATOMIC LAYERS | Electric potential | Torque | Intermetallic compounds | Radio frequency | Ohmic dissipation | Iron compounds | Thermal resistance | Direct current | Energy dissipation | Magnetic anisotropy | Voltage | Ferromagnetism | Magnons | Magnesium oxide | Tunnel junctions | Conversion | Amplification | Ferromagnetic resonance | Spin dynamics | Anisotropy | Nickel compounds | Electrical junctions | Gain | Spintronics | Resistance heating | Bilayers
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5. Full Text Giant Tunneling Magnetoresistance in MgO-Based Magnetic Tunnel Junctions
by Yuasa, Shinji
Journal of the Physical Society of Japan, ISSN 0031-9015, 2008, Volume 77, Issue 3, pp. 031001 - 031001
A magnetic tunnel junction (MTJ), which consists of a thin insulating layer (a tunnel barrier) sandwiched between two ferromagnetic electrode layers, exhibits... 
magnetoresistance | magnetic tunnel junction | TMR | spintronics | Al-O | MgO | Magnetoresistance | Magnetic tunnel junction | Spintronics | ROOM-TEMPERATURE | magneto resistance | PHYSICS, MULTIDISCIPLINARY | FERROMAGNETIC-FILMS | BAND-STRUCTURE
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6. Full Text 230% room-temperature magnetoresistance in CoFeBMgOCoFeB magnetic tunnel junctions
by Djayaprawira, David D and Tsunekawa, Koji and Nagai, Motonobu and Maehara, Hiroki and Yamagata, Shinji and Watanabe, Naoki and Yuasa, Shinji and Suzuki, Yoshishige and Ando, Koji
Applied Physics Letters, ISSN 0003-6951, 02/2005, Volume 86, Issue 9, pp. 1 - 3
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7. Physical reservoir computing based on spin torque oscillator with forced synchronization
by Tsunegi Sumito and Taniguchi Tomohiro and Miwa Shinji and Yakushiji Kay and Fukushima Akio and Yuasa Shinji and Kubota Hitoshi
Applied Physics Letters, ISSN 0003-6951, 04/2019, Volume 114, Issue 16
We investigated physical reservoir computing (RC) using a vortex-type spin torque oscillator (STO) as a resource of nonlinear dynamics, which is essential for... 
Performance indices | Short term | Nonlinear dynamics | Torque | Computation | Synchronism | Variations | Nanotechnology | Time synchronization
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8. Full Text Evaluation of memory capacity of spin torque oscillator for recurrent neural networks
by Tsunegi, Sumito and Taniguchi, Tomohiro and Miwa, Shinji and Nakajima, Kohei and Yakushiji, Kay and Fukushima, Akio and Yuasa, Shinji and Kubota, Hitoshi
Japanese Journal of Applied Physics, ISSN 0021-4922, 12/2018, Volume 57, Issue 12, p. 120307
We have succeeded in experimentally observing the memory functionality of a vortex-type spin torque oscillator used in recurrent neural networks for the first... 
PHASE-LOCKING | PHYSICS, APPLIED | Computer memory | Recurrent neural networks | Torque | Virtual memory systems | Neural networks | Voltage pulses
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9. Full Text Thermal spin current from a ferromagnet to silicon by Seebeck spin tunnelling
by Le Breton, Jean-Christophe and Sharma, Sandeep and Saito, Hidekazu and Yuasa, Shinji and Jansen, Ron
Nature, ISSN 0028-0836, 07/2011, Volume 475, Issue 7354, pp. 82 - 85
Heat generation by electric current, which is ubiquitous in electronic devices and circuits, raises energy consumption and will become increasingly problematic... 
MULTIDISCIPLINARY SCIENCES | METAL | Reports | Usage | Ferromagnetism | Silicon | Thermoelectricity | Studies | Electrodes | Temperature | Magnetism | Magnetic fields | Tunnels (transportation) | Semiconductors | Electronics | Devices | Spintronics
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10. Full Text Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
by Suzuki, Yoshishige and Nagahama, Taro and Yuasa, Shinji and Fukushima, Akio and Ando, Koji
Nature Materials, ISSN 1476-1122, 12/2004, Volume 3, Issue 12, pp. 868 - 871
The tunnel magnetoresistance (TMR) effect in magnetic tunnel junctions (MTJs) is the key to developing magnetoresistive random-access-memory (MRAM), magnetic... 
PHYSICS, CONDENSED MATTER | VOLTAGE | PHYSICS, APPLIED | MGO | FILM | MATERIALS SCIENCE, MULTIDISCIPLINARY | ELECTRODES | CHEMISTRY, PHYSICAL | Computers | Signal Processing, Computer-Assisted - instrumentation | Electronics - instrumentation | Temperature | Information Storage and Retrieval - methods | Iron - chemistry | Magnesium Oxide - chemistry | Materials Testing | Electric Conductivity | Manufactured Materials | Equipment Design | Magnetics - instrumentation | Feasibility Studies | Electrodes | Crystallization - methods
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11. Full Text Highly efficient voltage control of spin and enhanced interfacial perpendicular magnetic anisotropy in iridium-doped Fe/MgO magnetic tunnel junctions
by Nozaki, Takayuki and Kozioł-Rachwał, Anna and Tsujikawa, Masahito and Shiota, Yoichi and Xu, Xiandong and Ohkubo, Tadakatsu and Tsukahara, Takuya and Miwa, Shinji and Suzuki, Motohiro and Tamaru, Shingo and Kubota, Hitoshi and Fukushima, Akio and Hono, Kazuhiro and Shirai, Masafumi and Suzuki, Yoshishige and Yuasa, Shinji
NPG Asia Materials, ISSN 1884-4049, 12/2017, Volume 9, Issue 12, pp. e451 - e451
Voltage control of spin enables both a zero standby power and ultralow active power consumption in spintronic devices, such as magnetoresistive random-access... 
MAGNETORESISTANCE | TRANSITION | FIELD-INDUCED MODIFICATION | ROOM-TEMPERATURE | ELECTRIC-FIELD | MATERIALS SCIENCE, MULTIDISCIPLINARY | ATOMIC LAYERS | MAGNETOCRYSTALLINE ANISOTROPY | Access control | Electric potential | Memory devices | First principles | Random access memory | Magnesium oxide | Doping | Data storage | Tunnel junctions | Power consumption | Anisotropy | Magnetoresistivity | Magnetic anisotropy | Ferromagnetism | Iridium | Electrical junctions | Active control
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12. Full Text Field angle dependence of voltage-induced ferromagnetic resonance under DC bias voltage
by Shiota, Yoichi and Miwa, Shinji and Tamaru, Shingo and Nozaki, Takayuki and Kubota, Hitoshi and Fukushima, Akio and Suzuki, Yoshishige and Yuasa, Shinji
Journal of Magnetism and Magnetic Materials, ISSN 0304-8853, 02/2016, Volume 400, pp. 159 - 162
We studied the rectification function of microwaves in CoFeB/MgO-based magnetic tunnel junctions using voltage-induced ferromagnetic resonance (FMR). Our... 
Ferromagnetic resonance | Voltage-induced magnetic anisotropy change | Homodyne detection | Magnetic tunnel junction | PHYSICS, CONDENSED MATTER | MATERIALS SCIENCE, MULTIDISCIPLINARY | ATOMIC LAYERS | MAGNETIC TUNNEL-JUNCTIONS | Ferromagnetism | Magnetization | Magnetic fields | Anisotropy | Electric potential | Dynamics | Bias | Voltage | Excitation spectra | Microwaves
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13. Full Text Neuromorphic computing with nanoscale spintronic oscillators
by Torrejon, Jacob and Riou, Mathieu and Araujo, Flavio Abreu and Tsunegi, Sumito and Khalsa, Guru and Querlioz, Damien and Bortolotti, Paolo and Cros, Vincent and Yakushiji, Kay and Fukushima, Akio and Kubota, Hitoshi and Yuasa, Shinji and Stiles, Mark D and Grollier, Julie
Nature, ISSN 0028-0836, 07/2017, Volume 547, Issue 7664, pp. 428 - 431
Neurons in the brain behave as nonlinear oscillators, which develop rhythmic activity and interact to process information(1). Taking inspiration from this... 
MULTIDISCIPLINARY SCIENCES | SPIN-POLARIZED CURRENT | DRIVEN | Neural circuitry | Oscillators (Electronics) | Research | Properties | Analysis | Nanotechnology | Energy consumption | Brain | Magnetization | Neurons | Noise | Rhythms | Pattern recognition | Oscillators | Voice recognition | Low energy | Computation | Neural networks | Vortices | Signal processing | Nanotechnology devices
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14. Full Text Recent advances in medical therapy for metastatic urothelial cancer
by Yuasa, Takeshi and Urakami, Shinji and Yonese, Junji
International Journal of Clinical Oncology, ISSN 1341-9625, 8/2018, Volume 23, Issue 4, pp. 599 - 607
Cytotoxic chemotherapy has been the mainstay of medical therapy for metastatic urothelial cancer. Currently, the gemcitabine/cisplatin regimen is widely used... 
Urothelial cancer | Pembrolizumab | Chemotherapy | Medicine & Public Health | GC regimen | Oncology | Cancer Research | Immune-checkpoint inhibitor | Surgical Oncology | MVAC regimen | BLADDER-CANCER | DOXORUBICIN | METHOTREXATE | VINBLASTINE | SINGLE-ARM | GEMCITABINE | LONG-TERM-SURVIVAL | PHASE-III TRIAL | TRANSITIONAL-CELL-CARCINOMA | CISPLATIN | ONCOLOGY | Care and treatment | Metastasis | Health aspects | Immunoglobulin G | Cancer | Review
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15. Full Text 230% room-temperature magnetoresistance in CoFeB ∕ MgO ∕ CoFeB magnetic tunnel junctions
by Djayaprawira, David D and Tsunekawa, Koji and Nagai, Motonobu and Maehara, Hiroki and Yamagata, Shinji and Watanabe, Naoki and Yuasa, Shinji and Suzuki, Yoshishige and Ando, Koji
Applied Physics Letters, ISSN 0003-6951, 02/2005, Volume 86, Issue 9, pp. 092502 - 092502-3
Magnetoresistance (MR) ratio up to 230% at room temperature (294% at 20 K) has been observed in spin-valve-type magnetic tunnel junctions (MTJs) using MgO... 
MGO | PHYSICS, APPLIED
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16. Full Text Recent Progress in the Voltage-Controlled Magnetic Anisotropy Effect and the Challenges Faced in Developing Voltage-Torque MRAM
by Nozaki, T and Yamamoto, T and Miwa, S and Tsujikawa, M and Shirai, M and Yuasa, S and Suzuki, Y
MICROMACHINES, ISSN 2072-666X, 05/2019, Volume 10, Issue 5, p. 327
The electron spin degree of freedom can provide the functionality of nonvolatility in electronic devices. For example, magnetoresistive random access memory... 
magnetic tunnel junction | MAGNETORESISTANCE | FIELD-INDUCED MODIFICATION | ROOM-TEMPERATURE | voltage-controlled magnetic anisotropy | NANOSCIENCE & NANOTECHNOLOGY | REVERSAL | TRANSITION | INSTRUMENTS & INSTRUMENTATION | magnetoresistive random access memory | ATOMIC LAYERS | FERROMAGNETISM | MAGNETOCRYSTALLINE ANISOTROPY | RAY CIRCULAR-DICHROISM | THIN-FILM
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