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Materials Science Forum, ISSN 1662-9752, 07/2019, Volume 963, pp. 722 - 725
Comparative studies of the structural, electrophysical properties and spectral sensitivity of 4H-SiC photodetectors of ultraviolet radiation in the spectral... 
Thickness | Ultraviolet radiation | Epitaxial layers | Optical properties | Ultraviolet spectra | Photometers | Comparative studies | Ultraviolet detectors | Spectral sensitivity | Photodiodes | Electrons
Journal Article
Semiconductors, ISSN 1063-7826, 2/2016, Volume 50, Issue 2, pp. 240 - 243
Silicon-based light-emitting diodes (LEDs) fabricated by the Si-ion implantation and chemical-vapor deposition methods are studied. Room-temperature... 
Physics | Magnetism, Magnetic Materials | Physics, general | Light-emitting diodes | Optoelectronics industry
Journal Article
Semiconductors, ISSN 1063-7826, 2013, Volume 47, Issue 2, pp. 209 - 212
The extremely low level of intrinsic noise attained in silicon detectors with "ideal-diode" current-voltage characteristics has made it possible to create... 
PHYSICS, CONDENSED MATTER | PHOTODIODES | RANGE | Toy industry | Silicon | Detectors
Journal Article
Semiconductors, ISSN 1063-7826, 2/2016, Volume 50, Issue 2, pp. 252 - 256
The electroluminescence (EL) in n +–p–p + light-emitting-diode (LED) structures based on Si irradiated with electrons and annealed at high temperature is... 
Physics | Magnetism, Magnetic Materials | Physics, general | Annealing | Light-emitting diodes | Optoelectronics industry | Analysis | Epitaxy | Electrons | CHEMICAL VAPOR DEPOSITION | PHOSPHORUS | BORON | ANNEALING | ELECTRONS | SILICON | LIGHT EMITTING DIODES | MATERIALS SCIENCE | CONCENTRATION RATIO | ELECTROLUMINESCENCE | P-TYPE CONDUCTORS | LAYERS | DIAGRAMS | IRRADIATION | DOPED MATERIALS | POLYCRYSTALS
Journal Article
Semiconductors, ISSN 1063-7826, 2/2013, Volume 47, Issue 2, pp. 213 - 216
The spatial homogeneity of the photoresponse is studied for silicon photodiodes based on p-n and n-p junctions a year after their irradiation at a wavelength... 
Physics | Magnetism, Magnetic Materials | Physics, general | PHYSICS, CONDENSED MATTER | DETECTORS | QUANTUM EFFICIENCY | X-RAY RANGE | Invisibility | Nuclear radiation | Silicon | IRRADIATION | P-N JUNCTIONS | SOFT X RADIATION | WAVELENGTHS | SILICON | PHOTODIODES | MATERIALS SCIENCE | FAR ULTRAVIOLET RADIATION
Journal Article
Conference Proceeding
Semiconductors, ISSN 1063-7826, 10/2011, Volume 45, Issue 10, pp. 1378 - 1385
Radiative characteristics of semiconductor stripe-contact lasers operating under quenching conditions of Fabry-Perot-mode lasing are studied. It is found that... 
Physics | Magnetism, Magnetic Materials | Physics, general | PHYSICS, CONDENSED MATTER | HETEROSTRUCTURES | DIODES | Toy industry | Nuclear radiation | Lasers | Analysis | LASERS | QUENCHING | INJECTION | CRYSTALS | MATERIALS SCIENCE | ABSORPTION | EMISSION | GAIN | SEMICONDUCTOR MATERIALS
Journal Article
Solid State Phenomena, ISSN 1662-9779, 2016, Volume 242, pp. 368 - 373
  Defect structure, electrical properties and defect-related luminescence (DRL) of light emitting diodes (LED) with the active defect-rich region produced by... 
Defect-related luminescence | Silicon | Oxygen ion implantation | DLTS
Conference Proceeding
Semiconductors, ISSN 1063-7826, 2/2013, Volume 47, Issue 2, pp. 209 - 212
The extremely low level of intrinsic noise attained in silicon detectors with “ideal-diode” current-voltage characteristics has made it possible to create... 
Physics | Magnetism, Magnetic Materials | Physics, general
Journal Article
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