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Optics Express, ISSN 1094-4087, 02/2013, Volume 21, Issue 4, pp. 4958 - 4969
This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum... 
LEDS | OPTICS | PERFORMANCE | EFFICIENCY DROOP | Indium - chemistry | Gallium - chemistry | Semiconductors | Lighting - instrumentation | Electric Conductivity | Equipment Design | Equipment Failure Analysis
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 02/2019, Volume 66, Issue 2, pp. 1126 - 1126
The authors would like to make correction to [1] , affiliations on page 1, because one of the affiliations in Micromechanical devices | HEMTs | Wide band gap semiconductors | Semiconductor device reliability | Gallium nitride | Substrates | Gallium nitrides
Journal Article
by Kyaw, Z and Zhang, ZH and Liu, W and Tan, ST and Ju, ZG and Zhang, XL and Ji, Y and Hasanov, N and Zhu, BB and Lu, SP and Zhang, YP and Sun, XW and Demir, HV
OPTICS EXPRESS, ISSN 1094-4087, 01/2014, Volume 22, Issue 1, pp. 809 - 816
N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both... 
OPTICS | EFFICIENCY DROOP | ALGAN | GROWTH | OHMIC CONTACTS | Electrodes | Indium - chemistry | Gallium - chemistry | Semiconductors | Lighting - instrumentation | Materials Testing | Equipment Design | Equipment Failure Analysis
Journal Article
2011, Di 1 ban., Xin hai ge ming quan jing lu, ISBN 7210049444, 7, 2, 3, 191
Book
physica status solidi (a), ISSN 1862-6300, 01/2018, Volume 215, Issue 2, pp. 1700368 - n/a
Journal Article
Advanced Functional Materials, ISSN 1616-301X, 10/2019, Volume 29, Issue 42, pp. 1970293 - n/a
In article number 1905056, Xuelin Yang, Kaihui Liu, Bo Shen, and co‐workers achieve the epitaxy of single‐crystalline gallium nitride (GaN) film on a... 
nucleation | single‐crystalline GaN films | in‐plane orientation | single‐crystalline graphene | Liquors | Graphene | Epitaxy | Complementary metal oxide semiconductors | Graphite | Buffer layers | Domains | CMOS | Gallium nitrides | Silicon substrates | Crystallinity | Crystal structure
Journal Article
2007, Di 1 ban., Tong ji, Han yu xu shi wen xue cong shu, ISBN 9787560836669, 2, 356
Book
2009, Di 1 ban., ISBN 9787501187997, 426
Book
Journal of Luminescence, ISSN 0022-2313, 06/2019, Volume 210, pp. 169 - 174
Radiation effects of 10 MeV electrons on blue-lighting InGaN/GaN multiple quantum wells (MQWs) and ultraviolet-lighting GaN/AlGaN MQWs were investigated and... 
Radiation effect | Exciton localization energy | GaN/AlGaN | Non-radiation recombination centers | InGaN/GaN | Internal quantum efficiency | PHOTOLUMINESCENCE | OPTICS | Comparative analysis | Hardness | Quantum wells | Electrons
Journal Article
2007, ISBN 9787506340403
Book
Applied Physics Letters, ISSN 0003-6951, 10/2016, Volume 109, Issue 15, p. 152106
In this letter, we report a method by introducing hydrogen plasma treatment to realize normally-off p-GaN/AlGaN/GaN HEMT devices. Instead of using etching... 
PHYSICS, APPLIED | GAN | PASSIVATION | ENHANCEMENT | GATE ALGAN/GAN HEMTS | HFET | FIELD-EFFECT TRANSISTORS
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 06/2017, Volume 467, pp. 1 - 5
Growth conditions are used to control the residual carbon impurity incorporation in p -GaN layers. Specific contact resistance (ρ ) with various residual... 
A1. Carbon impurity | B1. p-GaN | A1. Ohmic contact | A3. MOCVD | PHYSICS, APPLIED | Ohmic contact | CHEMICAL-VAPOR-DEPOSITION | Carbon impurity | MATERIALS SCIENCE, MULTIDISCIPLINARY | p-GaN | AIR | CRYSTALLOGRAPHY | MG-DOPED GAN | RESISTIVITY | MOCVD | AU/NI | DEPENDENCE | GROWTH-CONDITIONS
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 03/2018, Volume 51, Issue 16, p. 163001
Gallium nitride 9GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based... 
GaN-on-Si | power circuits | GaN | PHYSICS, APPLIED | FIELD | MODE | GATE | BREAKDOWN VOLTAGE | TRANSISTORS | ALGAN/GAN HEMTS | SUBSTRATE | MIS | THRESHOLD VOLTAGE
Journal Article
2005, Chu ban., Lian he wen cong, ISBN 9575225198, Volume 312, 253
Book
2004, Di 1 ban., ISBN 7506328879, 2, 478 p., [1] leaf of plates
Book
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