X
Search Filters
Format Format
Subjects Subjects
Subjects Subjects
X
Sort by Item Count (A-Z)
Filter by Count
学生 (25) 25
electricity (23) 23
physics (23) 23
教学 (22) 22
课堂教学 (18) 18
对策 (17) 17
应用 (17) 17
教师 (17) 17
培养 (15) 15
教学模式 (15) 15
学习 (14) 14
实践 (14) 14
高职院校 (14) 14
performing operations (13) 13
transporting (13) 13
教学改革 (13) 13
教学方法 (13) 13
阅读教学 (13) 13
中国 (12) 12
企业 (12) 12
人才培养 (11) 11
语文教学 (11) 11
calculating (10) 10
computing (10) 10
counting (10) 10
electric communication technique (10) 10
measuring (10) 10
testing (10) 10
大学生 (10) 10
课外阅读 (10) 10
blasting (9) 9
heating (9) 9
lighting (9) 9
mechanical engineering (9) 9
weapons (9) 9
小学生 (9) 9
思想政治教育 (9) 9
精神 (9) 9
素质教育 (9) 9
英语教学 (9) 9
设计 (9) 9
语文课程标准 (9) 9
问题 (9) 9
高中 (9) 9
中学 (8) 8
创新 (8) 8
初中 (8) 8
学习兴趣 (8) 8
教学内容 (8) 8
教育改革 (8) 8
新课标 (8) 8
领导干部 (8) 8
高校 (8) 8
高考 (8) 8
basic electric elements (7) 7
engineering elements and units (7) 7
gan (7) 7
general measures for producing and maintaining effectivefunctioning of machines or installations (7) 7
generation (7) 7
handling record carriers (7) 7
human necessities (7) 7
presentation of data (7) 7
recognition of data (7) 7
record carriers (7) 7
thermal insulation in general (7) 7
中国特色社会主义 (7) 7
孩子 (7) 7
实践教学 (7) 7
建议 (7) 7
思想政治工作 (7) 7
改革 (7) 7
教学实践 (7) 7
教学效果 (7) 7
教学质量 (7) 7
新课程 (7) 7
新课程改革 (7) 7
物理 (7) 7
现状 (7) 7
社会主义市场经济 (7) 7
科学发展观 (7) 7
策略 (7) 7
经济发展 (7) 7
老师 (7) 7
语文学习 (7) 7
阅读知识 (7) 7
conversion or distribution of electric power (6) 6
fixed constructions (6) 6
gallium nitrides (6) 6
leckstrom (6) 6
physics, applied (6) 6
中国特色 (6) 6
互联网 (6) 6
企业发展 (6) 6
信息化 (6) 6
党的建设 (6) 6
党的群众路线 (6) 6
分析 (6) 6
发展 (6) 6
发展趋势 (6) 6
商业银行 (6) 6
more...
Language Language
Publication Date Publication Date
Click on a bar to filter by decade
Slide to change publication date range


IEEE Transactions on Electron Devices, ISSN 0018-9383, 04/2017, Volume 64, Issue 4, pp. 1554 - 1560
In this paper, a normally off Al 2 O 3 /AlN/GaN MISFET on Si substrate for achieving high threshold voltage stability and uniformity is obtained based on... 
Al₂O₃/AlN/GaN MISFET | uniformity | III-V semiconductor materials | selective area growth (SAG) | threshold voltage stability | normally off | MISFETs | Logic gates | field-effect mobility | Threshold voltage | Wide band gap semiconductors | recessed gate | Aluminum gallium nitride | Aluminum nitride | AlN/GaN MISFET
Journal Article
physica status solidi (a), ISSN 1862-6300, 10/2016, Volume 213, Issue 10, pp. 2693 - 2698
In this work, H2O‐Al2O3/O3‐Al2O3 insulating bilayers were grown on GaN by atomic‐layer deposition (ALD) technique using H2O vapor and O3 as oxidants. The... 
metal–oxide–semiconductor structures | bilayer | GaN | Al2O3 | atomic‐layer deposition | ozone | atomic-layer deposition | Al | O | Electronic components industry | Liquors | Capacitors | Investigations | Aluminum oxide
Journal Article
文教资料, ISSN 1004-8359, 2014, Issue 9, pp. 10 - 12
作者细读徐迟的《江南小镇》,从“求真意识”、“求善价值”、“审美理想”方面洞察、解析徐迟晚年的传记,诠释《江南小镇》创作中以“真、善、美”为内涵的审美价值追求,感受徐迟文学创作中体现出来的精神人格、情感倾向和理想志趣. 
求真意识 | 江南小镇 | 求善价值 | 审美理想
Journal Article
Applied Surface Science, ISSN 0169-4332, 10/2015, Volume 351, pp. 1155 - 1160
•The influence of O2 plasma treatment on mesa region of AlGaN/GaN HFET was studied.•An effective condition of O2 plasma treatment was confirmed.•The treated... 
Leakage current | Mesa isolation | AlGaN/GaN HFET | GaN | O2 plasma treatment | plasma treatment | O | Band spectra | Semiconductor devices | Field effect transistors | Gallium nitrides | Luminescence | Heterojunctions | Aluminum gallium nitrides | Defects
Journal Article
physica status solidi (c), ISSN 1862-6351, 05/2016, Volume 13, Issue 5‐6, pp. 345 - 349
The electrical and optical properties of the carbon doped GaN grown on Si substrate by metal‐organic chemical‐vapor deposition are investigated. Carbon... 
traps | photoluminescence | GaN | breakdown | c‐doping | Breakdown | Traps | C-doping | Photoluminescence | Electric potential | Impurities | Gallium nitrides | Voltage | Doping | Silicon substrates | Carbon
Journal Article
Applied Surface Science, ISSN 0169-4332, 10/2015, Volume 351, p. 1155
* The influence of O.sub.2 plasma treatment on mesa region of AlGaN/GaN HFET was studied. * An effective condition of O.sub.2 plasma treatment was confirmed. *... 
Circuit components | Electrical engineering | Plasma physics | Field-effect transistors
Journal Article
Journal of Materials Science: Materials in Electronics, ISSN 0957-4522, 9/2016, Volume 27, Issue 9, pp. 9061 - 9066
Journal Article
Journal of Materials Science: Materials in Electronics, ISSN 0957-4522, 05/2016, Volume 27, Issue 5, pp. 5158 - 5163
Journal Article
Physica Status Solidi A: Applications and Materials Science, ISSN 1862-6300, 10/2016, Volume 213, Issue 10, pp. 2693 - 2698
In this work, H sub(2)O-Al sub(2)O sub(3)/O sub(3)-Al sub(2)O sub(3) insulating bilayers were grown on GaN by atomic-layer deposition (ALD) technique using H... 
Interlayers | Electric potential | Oxidants | Oxidizing agents | Oxidation | Density | Deposition | MOS devices
Journal Article
physica status solidi (a), ISSN 1862-6300, 10/2016, Volume 213, Issue 10, pp. 2693 - 2698
Journal Article
Yanshi Xuebao/Acta Petrologica Sinica, ISSN 1000-0569, 2016, Volume 32, Issue 1, pp. 64 - 70
Ca-, Al-rich inclusions (CAIs) are the earliest assemblages of the solar nebula, and they contain information of early solar nebula. They are the probe of... 
Chondrites | Oxygen isotope | Petrography and mineral chemistry | Ca-, Al-rich inclusions | Wark-Lovering rims | Al-rich inclusions | REFRACTORY INCLUSIONS | METEORITES | ORIGIN | GEOLOGY | NINGQIANG CARBONACEOUS CHONDRITE | ENSTATITE CHONDRITES | OXYGEN ISOTOPES | SOLAR NEBULA | CHONDRULES | SYSTEMATICS | CONDENSATION | Ca
Journal Article
曲靖师范学院学报, ISSN 1009-8879, 2012, Volume 31, Issue 6, pp. 28 - 33
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 01/2015, Volume 54, Issue 1, p. 015505
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 01/2015, Volume 54, Issue 1, p. 011001
Journal Article
by 周敏
海外英语, ISSN 1009-5039, 2013, Issue 4X, pp. 142 - 143
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 09/2015, Volume 30, Issue 10, p. 105037
The influence of different C-doping locations in a GaN/Si structure with a GaN/AlN superlattice (SL) buffer on the material and electrical properties of GaN/Si... 
AlGaN/GaN on Si | leakage current | carbon doping location | HFET | breakdown voltage | SAPPHIRE | PHYSICS, CONDENSED MATTER | C-DOPED GAN | INTERLAYER | ALN | DHFETS | MOBILITY | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON | RESISTIVITY | ENGINEERING, ELECTRICAL & ELECTRONIC | THICK
Journal Article
江西社会科学, ISSN 1004-518X, 2011, Issue 4, pp. 108 - 111
《文心雕龙》的"文之枢纽"部分《原道》、《征圣》、《宗经》、《正纬》、《辨骚》五个单元,既相互独立又构成一个整体。相互独立指五个部分都有各自独特的角度,不能相互代替。互成整体指五个单元虽然立论角度不同,但是它们如众星拱月一样,围绕着一个共同的主题,即如何寻求"理想之文"。 
文心雕龙 | 刘勰 | 文之枢纽 | 理想之文
Journal Article
No results were found for your search.

Cannot display more than 1000 results, please narrow the terms of your search.