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Energy Conversion and Management, ISSN 0196-8904, 07/2016, Volume 119, pp. 361 - 367
[Display omitted] •InxGa1−xN/SnS and AlxGa1−xN/SnS solar cells are studied by numerical analysis.•Performances of InxGa1−xN/SnS solar cells enhanced with... 
Thin film solar cell | Simulation | InGaN | SnS | Heterojunction | AlGaN | Photovoltaics | THIN-FILMS | CONTACT | ALN | ENERGY & FUELS | MECHANICS | THERMODYNAMICS | CARRIER TRANSPORT | FABRICATION
Journal Article
SCIENTIFIC REPORTS, ISSN 2045-2322, 07/2019, Volume 9, Issue 1
This work presents a systematic study of stress and strain of AlxGa1-xN/AlN with composition ranging from GaN to AlN, grown on a c-plane sapphire by... 
STATES | FILMS | CHEMICAL-VAPOR-DEPOSITION | GAN | MULTIDISCIPLINARY SCIENCES | GROWTH | ULTRAVIOLET PHOTODETECTORS | LAYERS | MATERIALS SCIENCE
Journal Article
ACS Applied Materials and Interfaces, ISSN 1944-8244, 03/2016, Volume 8, Issue 12, pp. 8232 - 8238
The long-term stability of InGaN photoanodes in liquid environments is an essential requirement for their use in photoelectrochemistry. In this paper, we... 
surface oxidation | InGaN layer | transmission electron microscopy | X-ray photoelectron spectroscopy | photoelectrochemical stability | OXIDATION | INGAN | PERFORMANCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | SENSOR | NANOSCIENCE & NANOTECHNOLOGY | ARRAYS | PHOTOCATHODES | GAN | NANOWIRES | CHARGE | GALLIUM
Journal Article
Applied Physics Letters, ISSN 0003-6951, 08/2013, Volume 103, Issue 7, p. 71110
Heterogeneous n-III-nitride/i-p silicon carbide (SiC) photodetectors have been demonstrated that enable the tailoring of the spectral response in the solar... 
TRANSPORT | PHYSICS, APPLIED | 4H-SIC AVALANCHE PHOTODIODES
Journal Article
Electronics (Switzerland), ISSN 2079-9292, 12/2018, Volume 7, Issue 12, p. 410
A comprehensive model for 2DEG characteristics of InxAl1-xN/AlN/GaN heterostructure has been presented, taking both polarization and bulk ionized charge into... 
Polarization effect | InAlN/GaN heterostructure | Quantum mechanical | 2DEG density | DENSITY | quantum mechanical | MOBILITY | GaN heterostructure | PIEZOELECTRIC POLARIZATION | 2-DIMENSIONAL ELECTRON-GAS | InAlN | ALGAN/GAN | polarization effect | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 06/2009, Volume 479, Issue 1-2, pp. 812 - 815
Al In N films with an AlN buffer were deposited on different substrates (including Si(1 1 1), sapphire, and glass) by radio-frequency (RF) magnetron sputtering... 
Resistance | N film | Magnetron sputtering | Crystallinity | VAPOR-PHASE EPITAXY | ENERGY | ALN | INXAL1-XN | MATERIALS SCIENCE, MULTIDISCIPLINARY | METALLURGY & METALLURGICAL ENGINEERING | MOLECULAR-BEAM EPITAXY | AlxIn1-xN film | FUNDAMENTAL-BAND GAP | OPTICAL-PROPERTIES | INN | CHEMISTRY, PHYSICAL | ALINN | NANOWIRES
Journal Article
Journal of Materials Chemistry C, ISSN 2050-7534, 05/2015, Volume 3, Issue 20, pp. 5307 - 5315
Ternary AlxGa1-xN films with different Al compositions were synthesized on sapphire and Si substrates by pulsed laser co-ablation of a polycrystalline GaAs... 
THIN-FILMS | PHYSICS, APPLIED | ALN | ALLOYS | AIN | MATERIALS SCIENCE, MULTIDISCIPLINARY | GAP | GAAS TARGET | ZINCBLENDE | ABLATION | ALUMINUM NITRIDE | WURTZITE PHASES
Journal Article
Chinese Physics Letters, ISSN 0256-307X, 10/2011, Volume 28, Issue 10, p. 108104
We investigate the structural property and surface morphology of InxGa1-xN films for In compositions ranging from 0.06 to 0.58, which are deposited by electron... 
PHASE-SEPARATION | SYSTEM | CHEMICAL-VAPOR-DEPOSITION | PHYSICS, MULTIDISCIPLINARY | INGAN | FUNDAMENTAL-BAND GAP | OPTICAL-PROPERTIES | IN1-XGAXN ALLOYS | INN | ENTIRE ALLOY COMPOSITION | LAYERS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2004, Volume 84, Issue 22, pp. 4394 - 4396
Journal Article
Journal of Nanoscience and Nanotechnology, ISSN 1533-4880, 2011, Volume 11, Issue 12, pp. 10720 - 10724
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 05/2008, Volume 92, Issue 19, p. 192112
GaN/AlxGa1-xN superlattices (SLs) with different period thicknesses t(p) were grown as interlayers between GaN and AlyGa1-yN epilayers. The effect of threading... 
PHYSICS, APPLIED | FILMS | LASER-DIODES | INGAN/GAN LAYERS | STRAINED-LAYER SUPERLATTICES | RELAXATION | DEVICES | GAN-ALN | ALGAN
Journal Article
by Jeon, SR and Ren, Z and Cui, G and Su, J and Gherasimova, M and Han, J and Cho, HK and Zhou, L
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 02/2005, Volume 86, Issue 8, p. 82107
A study of Mg doping of AlxGa1-xN up to x similar to 50% using microstructural and electrical probes is reported. The viability of effective p-type doping is... 
LIGHT-EMITTING-DIODES | GAN | PHYSICS, APPLIED
Journal Article
Physica B: Condensed Matter, ISSN 0921-4526, 05/2008, Volume 403, Issue 10-11, pp. 1666 - 1672
The electronic structures and optical properties of wurtzite In Al N have been calculated using a first-principles self-consistent method. The calculated... 
N alloy | Wurtzite | Electronic structures | In | Al | Optical property | Density functional theory (DFT) | THIN-FILMS | PHYSICS, CONDENSED MATTER | ALN | FUNDAMENTAL-BAND GAP | INN | density functional theory (DFT) | wurtzite | electronic structures | PARAMETERS | optical property | PHASE | InxAl1-xN alloy | GALLIUM NITRIDE | ALUMINUM NITRIDE | ABSORPTION | INDIUM NITRIDE
Journal Article
Physical Review B, ISSN 1098-0121, 10/2007, Volume 76, Issue 15
Journal Article
Chinese Physics Letters, ISSN 0256-307X, 01/2004, Volume 21, Issue 1, pp. 170 - 172
Frequency-dependent capacitance-voltage (C-V) measurements have been performed on modulation-doped Al(0.22)Gao.78N/GaN heterostructures to investigate the... 
VOLTAGE | TEMPERATURE | PHYSICS, MULTIDISCIPLINARY | FIELD-EFFECT TRANSISTORS | STRAIN RELAXATION
Journal Article
ADVANCES IN CONDENSED MATTER PHYSICS, ISSN 1687-8108, 2015, Volume 2015, pp. 1 - 9
Within the framework of the effective mass approximation, the ground-state binding energy of a hydrogenic impurity is investigated in cylindrical wurtzite... 
PHYSICS, CONDENSED MATTER | HYDROGENIC IMPURITY | GAN | AB-INITIO | BINDING-ENERGY | PHOTOIONIZATION CROSS-SECTION | WELL WIRES
Journal Article
by Zhou, WZ and Lin, T and Shang, LY and Sun, L and Gao, KH and Zhou, YM and Yu, G and Tang, N and Han, K and Shen, B and Guo, SL and Gui, YS and Chu, JH
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 12/2008, Volume 93, Issue 26, p. 262104
The weak antilocalization effects of the two-dimensional electron gas in a high mobility AlxGa1-xN/GaN heterostructure have been investigated by means of... 
gallium compounds | PHYSICS, APPLIED | aluminium compounds | two-dimensional electron gas | electron mobility | galvanomagnetic effects | weak localisation | semiconductor heterojunctions | wide band gap semiconductors | spin-orbit interactions | QUANTUM-WELLS | III-V semiconductors
Journal Article
by Tang, N and Shen, B and Wang, M.J and Han, K and Yang, Z.J and Xu, K and Zhang, G.Y and Lin, T and Zhu, B and Zhou, W.Z and Chu, J.H
Applied Physics Letters, ISSN 0003-6951, 2006, Volume 88, Issue 17, p. 172112
Journal Article
Microwave and Optical Technology Letters, ISSN 0895-2477, 06/2011, Volume 53, Issue 6, pp. 1206 - 1209
A novel structure AxGa1‐xN/AlN/AlyGa1‐yN/GaN HEMT with composited‐layer and unintentionally doping barrier was designed for high linearity. The effect of... 
doping | linearity | composited‐layer | AlGaN/GaN | TRANSISTOR | DESIGN | composited-layer | GAN-HEMT | CHANNEL AL0.3GA0.7N/AL0.05GA0.95N/GAN HEMTS | OPTICS | HIGH-LINEARITY | ENGINEERING, ELECTRICAL & ELECTRONIC | Semiconductor devices | Semiconductors | Gallium nitrides | Barriers | Linearity | Doping | High electron mobility transistors | Aluminum nitride
Journal Article
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