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1.55 μm (3) 3
[spi.opti]engineering sciences [physics]/optics / photonic (3) 3
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Optical and Quantum Electronics, ISSN 0306-8919, 12/2006, Volume 38, Issue 15, pp. 1269 - 1278
Journal Article
Physica B: Physics of Condensed Matter, ISSN 0921-4526, 10/2016, Volume 498, pp. 21 - 26
An Er -doped Gd SiO single crystal with high optical quality has been grown by the Czochralski method. Polarized absorption and fluorescence spectra and... 
Spectroscopic property | Er3+:Gd2SiO5 crystal | 1.55 μm laser | SiO | Gd | crystal | 1.55 μm laser
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2005, Volume 87, Issue 24, pp. 243107 - 243107-3
InAs quantum-dot (QD) laser structures are grown on (113)B-oriented InP substrate by gas-source molecular-beam epitaxy. Following an optimized growth... 
ROOM-TEMPERATURE | PHYSICS, APPLIED | 1.55 MU-M | EMISSION | Photonic | Engineering Sciences | Optics
Journal Article
Journal of Quantitative Spectroscopy and Radiative Transfer, ISSN 0022-4073, 01/2014, Volume 133, pp. 311 - 318
Journal Article
Optical and Quantum Electronics, ISSN 0306-8919, 03/2006, Volume 38, Issue 4, pp. 369 - 379
Journal Article
Ceramics International, ISSN 0272-8842, 01/2015, Volume 41, Issue 1, pp. 259 - 263
This study explores a new method to achieve highly efficient red up-conversion luminescence by using Y O : Yb, Er pumping with a 1550 nm laser diode (Y O : Yb,... 
Y2O3: Yb, Er | Optical materials and properties | Red emission | 1.55 μm Excitation | Up-conversion | Yb, Er | 1.55 μm excitation
Journal Article
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, ISSN 0021-4922, 04/2006, Volume 45, Issue 4 B, pp. 3423 - 3426
Journal Article
2008 20th International Conference on Indium Phosphide and Related Materials, ISSN 1092-8669, 05/2008, pp. 1 - 4
MOVPE-grown InAs quantum dots (QDs) implemented as active layers in 1.55 mum emitting InGaAsP/InP broad-area laser devices show improved characteristics with... 
Epitaxial layers | Nanostructures | MOVPE | Indium phosphide | Optical devices | 1.55 μm lasers | Semiconductor optical amplifiers | quantum dots | Quantum dot lasers | Stimulated emission | Semiconductor lasers | Quantum well lasers | Laser modes | Epitaxial growth
Conference Proceeding
Journal of Alloys and Compounds, ISSN 0925-8388, 02/2014, Volume 587, pp. 344 - 348
The upconversion luminescence of Y O S: Yb, Er under 1550 nm pumping has been investigated. It presents excellent red emission under 1550 nm excitation with an... 
1.55 μm Excitation | Colour modulation | Upconversion luminescence | Oxysulphide
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 2005, Volume 98, Issue 1, pp. 13503 - 1/7
Growth of wavelength-tunable InAs quantum dots (QDs) embedded in a lattice-matched InGaAsP matrix on InP (100) substrates by metal-organic vapor-phase epitaxy... 
THRESHOLD | PHYSICS, APPLIED | TEMPERATURE | SUBSTRATE | LASER | AS/P EXCHANGE-REACTION | 1.55 MU-M | INP | INP 001 | Measurement | Epitaxy | Analysis | Quantum theory | Photoluminescence
Journal Article
Photonics and Nanostructures - Fundamentals and Applications, ISSN 1569-4410, 12/2018, Volume 32, pp. 42 - 46
Quantum dot microlasers are promising for application in photonic integrated circuits and lab-on-a-chip systems. In this article, we sought to design an... 
1.55 μm telecom band | Photonic crystal | InAs quantum dot | Laser | Crystal defects | Circuit design | Computer simulation | Quantum dots | Photonic crystals | Photonics | Integrated circuits | Numerical analysis | Lasers | Active regions (lasers) | Lasing | Microlasers | Crystal structure
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 10/2015, Volume 647, pp. 159 - 166
By applying the band anticrossing model combined with the envelope function formalism, a theoretical study of optoelectronic properties of lattice matched... 
GaNAsBi-based MQWs | Absorption coefficient | Emission of 1.55 μm | BAC model | Effective mass | Coupling effect | Emission of 1.55 μm
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2017, Volume 10123
Conference Proceeding
Physica E: Low-dimensional Systems and Nanostructures, ISSN 1386-9477, 2006, Volume 32, Issue 1, pp. 516 - 519
Antimonide-based quantum dot (Sb-based QD) vertical-cavity surface-emitting lasers (VCSELs) were developed to operate in the 1.3- and 1.55-μm optical... 
Quantum dot | 1.3- and 1.55-μm wavebands | GaAs | Vertical-cavity surface-emitting laser | InGaSb | PHYSICS, CONDENSED MATTER | SURFACE-EMITTING LASERS | quantum dot | NANOSCIENCE & NANOTECHNOLOGY | vertical-cavity surface-emitting laser | 1.3-and 1.55-mu m wavebands | MU-M | EMISSION | Lasers | Gallium arsenide
Journal Article
Optical Materials, ISSN 0925-3467, 10/2013, Volume 35, Issue 12, pp. 2314 - 2319
Undoped and Er -doped Sr Yb (BO ) crystals were grown by the Czochralski method. Room temperature polarized spectral properties of the Er:Sr Yb (BO ) crystal... 
Spectroscopic properties | Er:Sr3Yb2(BO3)4 crystal | 1.55 μm laser | Yb | ) | Spectroscopic properties 1.55 μm laser | Er:Sr | BO | crystal
Journal Article
IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, 11/2015, Volume 21, Issue 6, pp. 287 - 299
Journal Article
IEEE Journal of Quantum Electronics, ISSN 0018-9197, 1995, Volume 31, Issue 1, pp. 29 - 34
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 03/2018, Volume 736, pp. 29 - 34
Journal Article
Optics Communications, ISSN 0030-4018, 10/2015, Volume 353, pp. 42 - 48
The impacts of gain compression and direct carrier transition on relative intensity noise (RIN) characteristics of 1.55 µm QD lasers have been investigated... 
Nonlinear gain | 1.55 μm QD lasers | Direct carrier transition | Relative intensity noise | Langevin noise
Journal Article
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