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Journal of Applied Physics, ISSN 0021-8979, 06/2017, Volume 121, Issue 23, p. 235301
The effect of an InP cap on the photoluminescence (PL) spectrum of an InGaAsP/InAlAs quantum well (QW) is investigated using excitation power and temperature... 
INGAASP | PHYSICS, APPLIED | 1.55 MU-M | SOLAR-CELLS | TEMPERATURE-DEPENDENCE | INTERFACE
Journal Article
APPLIED PHYSICS B-LASERS AND OPTICS, ISSN 0946-2171, 10/2018, Volume 124, Issue 10
We report on a simple, robust, femtosecond chirped-pulse-amplification system, based on Er-and Er-Yb-doped fibers, operating at a central wavelength of 1555... 
CORNEAL SURGERY | PHYSICS, APPLIED | 1.55 MU-M | AMPLIFICATION SYSTEM | OPTICS | HIGH-POWER
Journal Article
Optics Express, ISSN 1094-4087, 05/2018, Volume 26, Issue 11, pp. 14472 - 14478
Two photoconductive emitters - one with a self-complementary square spiral antenna, and the other with a resonant slot antenna - were fabricated on a GaAs... 
ERBIUM-DOPED-GAAS | CONVERSION EFFICIENCY | TERAHERTZ RADIATION | EXCITATION | MOLECULAR-BEAM EPITAXY | 1.55 MU-M | OPTICS | ANTENNA | INGAAS
Journal Article
OPTICS EXPRESS, ISSN 1094-4087, 09/2010, Volume 18, Issue 20, pp. 20673 - 20680
An ultralow-repetition-rate, all-polarization-maintaining (PM), Er-doped, ultrashort-pulse fiber laser was demonstrated using a single-wall-carbon-nanotube... 
1.55 MU-M | GENERATION | OPTICS | OSCILLATOR | CAVITY | FEMTOSECOND LASER
Journal Article
Optics Express, ISSN 1094-4087, 04/2012, Volume 20, Issue 8, pp. 9151 - 9160
An analysis of the passively mode locked regime in semiconductor lasers is presented, leading to an explicit expression relating the timing jitter diffusion... 
1.55 MU-M | OPTICS | LINEWIDTH | COMBS | PHASE NOISE | Optics | Physics
Journal Article
Optics Letters, ISSN 0146-9592, 10/2013, Volume 38, Issue 20, pp. 4197 - 4199
A modified photoconductive receiver significantly improves the performance of photomixing-based continuous wave (cw) THz systems driven at the optical... 
SPECTROMETER | 1.55 MU-M | ANTENNAS | OPTICS | Noise levels | Continuous wave | Optoelectronics | Wavelengths | Low cost | Receivers | Telecommunications | Signal to noise ratio
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 10/2016, Volume 109, Issue 17
We explore the growth and characterization of ErAs:GaBiAs as a candidate material for terahertz generation and detection via photoconductive switches.... 
TERAHERTZ TECHNOLOGY | PHYSICS, APPLIED | TEMPERATURE | SUPERLATTICES | ERAS ISLANDS | 1.55 MU-M | GAAS | DEPENDENCE | INGAAS | MATERIALS SCIENCE
Journal Article
OPTICAL AND QUANTUM ELECTRONICS, ISSN 0306-8919, 12/2006, Volume 38, Issue 15, pp. 1269 - 1278
We report on the design, fabrication, and characterization of InP-based 1.55 mu m wavelength large diameter (50 mu m) electrically pumped vertical external... 
ROOM-TEMPERATURE | OUTPUT | DIODE | external cavity laser | HIGH-POWER | tunnel junction | ENGINEERING, ELECTRICAL & ELECTRONIC | vertical cavity surface emitting semiconductor laser | semiconductor Bragg reflector | SURFACE-EMITTING LASERS | OPERATION | WAVELENGTH | 1.55 mu m laser emission | OPTICS | BURIED TUNNEL-JUNCTION | SEMICONDUCTOR-LASER
Journal Article
Optics Express, ISSN 1094-4087, 07/2012, Volume 20, Issue 15, pp. 16504 - 16509
1550-nm pulses from a fiber-mode-locked laser are used to drive an ErAs: GaAs photoconductive switch, resulting in easily measured THz radiation with average... 
CONVERSION EFFICIENCY | 1.55-MU-M | EXCITATION | SEMICONDUCTORS | GROWTH | POWER | 1.55 MU-M | OPTICS | GAAS | CARRIER DYNAMICS | INGAAS
Journal Article
Optics Express, ISSN 1094-4087, 01/2015, Volume 23, Issue 2, pp. 846 - 856
In this study, inspired by the frequency-modulated continuous-wave (FMCW) method, an operation scheme of continuous-wave (CW) terahertz (THz) homodyne system... 
DUAL-MODE LASER | TEMPERATURE-GROWN GAAS | CONDUCTIVITIES | 1.55 MU-M | GENERATION | DIODE | OPTICS | TECHNOLOGY | THICKNESS
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 08/2018, Volume 124, Issue 5, p. 54501
This paper addresses the electrical and electro-optical characteristics of InAs/InP quantum dot (QD) laser diodes operating under continuous wave in the... 
VOLTAGE | THRESHOLD | PHYSICS, APPLIED | SEMICONDUCTOR OPTICAL AMPLIFIERS | INTERFACES | 1.55 MU-M | NEGATIVE CAPACITANCE | WELL LASER | DOUBLE INJECTION | DIODES | CHARGE
Journal Article
Optical Engineering, ISSN 0091-3286, 1/2017, Volume 56, Issue 1, pp. 010901 - 010901
Photoconductive antennas (PCAs) have been extensively utilized for the generation and detection of both pulsed broadband and single frequency continuous wave... 
spectroscopy | terahertz | photoconductive antenna | EMISSION CHARACTERISTICS | LOG-PERIODIC ANTENNAS | OPTICAL RECTIFICATION | CONVERSION EFFICIENCY | TEMPERATURE-GROWN GAAS | SECURITY APPLICATIONS | 1.55 MU-M | OPTICS | CARRIER LIFETIME | ION-IMPLANTED GAAS | COHERENT DETECTION
Journal Article
Applied Physics Letters, ISSN 0003-6951, 09/2012, Volume 101, Issue 10, p. 101105
We report on high power terahertz (THz) emission from ErAs-enhanced In0.52Al0.48As-In0.53Ga0.47As superlattices for operation at 1550 nm. ErAs clusters act as... 
TERAHERTZ RADIATION | PHYSICS, APPLIED | EXCITATION | INCREASE | 1.55 MU-M | M WAVELENGTH | TIME-DOMAIN SPECTROSCOPY | THZ GENERATION | INGAAS | Field strength | Superlattices | Crystals | Clusters | Emission | Emissions control | Emitters
Journal Article
Journal of Quantitative Spectroscopy and Radiative Transfer, ISSN 0022-4073, 01/2014, Volume 133, pp. 311 - 318
Yb3+/Er3+ codoped fluorophosphate glass has been investigated for developing broadband waveguide amplifier application. Spectroscopic properties and energy... 
Energy transfer | Fluorophosphate glass | 1.55 μm emission | 1.55μm emission | 1.5 MU-M | PHOSPHATE LASER GLASSES | GERMANATE GLASSES | SPECTROSCOPIC PROPERTIES | SILICA GLASS | ER3 | 1.55 mu m emission | EMISSION PROPERTIES | BAND | MULTIPHONON RELAXATION | RARE-EARTH IONS | SPECTROSCOPY | Rare earth metals | Waveguides | Fluorescence | Spectral emissivity | Spectroscopy | Equivalence | Broadband | Glass | Amplifiers
Journal Article
OPTICAL AND QUANTUM ELECTRONICS, ISSN 0306-8919, 11/2008, Volume 40, Issue 14-15, pp. 1193 - 1198
The design of an electrically pumped InGaAs quantum well based vertical cavity surface emitting laser (VCSEL) on InP substrate is presented. Such optically... 
Electrically pumped VCSEL | QUANTUM SCIENCE & TECHNOLOGY | DBR | 1.55 mu m | Tunnel junction | OPTICS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE PHOTONICS TECHNOLOGY LETTERS, ISSN 1041-1135, 11/2005, Volume 17, Issue 11, pp. 2253 - 2255
Journal Article
Journal of the Optical Society of America B: Optical Physics, ISSN 0740-3224, 08/2018, Volume 35, Issue 8, pp. 2036 - 2045
Photorefractive properties of tin-doped CdTe crystals are studied. The material demonstrates sensitivity for low-intensity recording. A one-center model of the... 
DEEP LEVELS | COMPENSATION | CADMIUM TELLURIDE | PHASE-CONJUGATION | DIGITAL HOLOGRAPHY | LIGHT | REFRACTIVE-INDEX | CRYSTALS | 1.55 MU-M | OPTICS | GAIN
Journal Article
Optics Express, ISSN 1094-4087, 03/2010, Volume 18, Issue 6, pp. 5668 - 5673
We, for the first time, present the ultrafast optical nonlinear response of a hydrogenated amorphous silicon (a-Si:H) wire waveguide using femtosecond pulses.... 
FEMTOSECOND PULSES | DEVICES | 1.55 MU-M | ABSORPTION | OPTICS | PHOTONIC WIRES | MODULATION | GAIN | Nonlinear Dynamics | Equipment Design | Hydrogen - chemistry | Refractometry - instrumentation | Silicon - chemistry | Equipment Failure Analysis
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 11/2008, Volume 104, Issue 9, pp. 093501 - 093501-16
We have studied the effect of growth and design parameters on the performance of Si-doped GaN/AlN multiquantum-well (MQW) structures for intersubband... 
MULTIPLE-QUANTUM WELLS | PHYSICS, APPLIED | INFRARED PHOTODETECTOR | CASCADE LASER | TELECOMMUNICATION WAVELENGTHS | WAVE-GUIDES | MOLECULAR-BEAM EPITAXY | 1.55 MU-M | ABSORPTION | GAN SURFACES | GAN-ALN | Gallium | Optoelectronics | Optical properties | Analysis | Silicon | Semiconductor doping | Aluminum nitride | Electric properties
Journal Article
Electronics Letters, ISSN 0013-5194, 4/2014, Volume 50, Issue 9, pp. 690 - 692
Narrow linewidth terahertz (THz) generation using a cascaded Brillouin fibre laser structure and a unitravelling carrier photodiode is investigated. Using two... 
Photonics | 1.55 MU-M | PHOTOMIXER | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
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