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IEEE Journal of Quantum Electronics, ISSN 0018-9197, 05/2010, Volume 46, Issue 5, pp. 742 - 753
Journal Article
Optics Express, ISSN 1094-4087, 04/2012, Volume 20, Issue 8, pp. 8649 - 8657
Mode locking features of single section quantum dash based lasers are investigated. Particular interest is given to the static spectral phase profile... 
SEMICONDUCTOR-LASERS | PULSE GENERATION | LOCKED LASERS | 1.55 MU-M | DOT LASERS | OPTICS | JITTER | Optics | Physics
Journal Article
IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, 11/2017, Volume 23, Issue 6, pp. 1 - 11
Journal Article
Optics Express, ISSN 1094-4087, 04/2018, Volume 26, Issue 8, pp. 9714 - 9723
A fully integrated heterogeneous silicon/III-V colliding pulse mode-locked laser with tunable on-chip optical feedback operating in the O-band is extensively... 
SEMICONDUCTOR-LASERS | OPTICAL FEEDBACK | PHOTONICS | 1.55 MU-M | TIMING JITTER | DIODES | OPTICS
Journal Article
IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, 11/2015, Volume 21, Issue 6, pp. 287 - 299
Journal Article
Optics Express, ISSN 1094-4087, 1764, Volume 22, Issue 9, pp. 11254 - 11266
We present the first demonstration of an InAs/InP Quantum Dash based single-section frequency comb generator designed for use in photonic integrated circuits... 
SEMICONDUCTOR-LASERS | 1.55 MU-M | OPTICS | LOCKING | OPERATION | OPTICAL AMPLIFIERS
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 08/2018, Volume 124, Issue 5, p. 54501
This paper addresses the electrical and electro-optical characteristics of InAs/InP quantum dot (QD) laser diodes operating under continuous wave in the... 
VOLTAGE | THRESHOLD | PHYSICS, APPLIED | SEMICONDUCTOR OPTICAL AMPLIFIERS | INTERFACES | 1.55 MU-M | NEGATIVE CAPACITANCE | WELL LASER | DOUBLE INJECTION | DIODES | CHARGE
Journal Article
OPTICS EXPRESS, ISSN 1094-4087, 09/2010, Volume 18, Issue 20, pp. 20673 - 20680
An ultralow-repetition-rate, all-polarization-maintaining (PM), Er-doped, ultrashort-pulse fiber laser was demonstrated using a single-wall-carbon-nanotube... 
1.55 MU-M | GENERATION | OPTICS | OSCILLATOR | CAVITY | FEMTOSECOND LASER
Journal Article
Journal Article
by Kim, JS and Lee, CR and Kwack, HS and Choi, BS and Sim, E and Lee, CW and Oh, DK
IEEE TRANSACTIONS ON NANOTECHNOLOGY, ISSN 1536-125X, 03/2008, Volume 7, Issue 2, pp. 128 - 130
For the fabrication of quantum dot (QD) distributed feedback (DFB) lasers, self-assembled InAs/InAlGaAs QDs were grown on the InP/InGaAs grating structures by... 
single-mode operation | PHYSICS, APPLIED | ROOM-TEMPERATURE OPERATION | laser quantum dot | MATERIALS SCIENCE, MULTIDISCIPLINARY | 1.55 mu m | NANOSCIENCE & NANOTECHNOLOGY | characteristic temperature | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 10/2016, Volume 120, Issue 13, p. 134313
We studied the polarization anisotropy of electroluminescence (EL) and net modal gain characteristics of laser device structures containing 40 stacked... 
TRANSMISSION | PHYSICS, APPLIED | AMPLIFIERS | STRAIN DISTRIBUTION | TEMPERATURE | OPTICAL GAIN | 1.55 MU-M | SPECTRA | REGION | Usage | Gallium | Polarization (Electricity) | Arsenic | Quantum dots | Structure | Electric properties
Journal Article
Optics Express, ISSN 1094-4087, 04/2012, Volume 20, Issue 8, pp. 9151 - 9160
An analysis of the passively mode locked regime in semiconductor lasers is presented, leading to an explicit expression relating the timing jitter diffusion... 
1.55 MU-M | OPTICS | LINEWIDTH | COMBS | PHASE NOISE | Optics | Physics
Journal Article
IEEE Journal of Quantum Electronics, ISSN 0018-9197, 09/2007, Volume 43, Issue 9, pp. 773 - 785
Journal Article
IEEE PHOTONICS TECHNOLOGY LETTERS, ISSN 1041-1135, 08/2005, Volume 17, Issue 8, pp. 1596 - 1598
We present 1.55-mu m wavelength buried tunnel junction InGaAlAs-InP vertical-cavity surface-emitting lasers with low threshold current and high efficiency. An... 
InGaAlAs-InP | PHYSICS, APPLIED | semiconductor laser | SURFACE-EMITTING LASERS | long-wavelength vertical-cavity surface-emitting laser (VCSEL) | 1.55 MU-M | OPTICS | 10 GBIT/S | tunnel junction | ENGINEERING, ELECTRICAL & ELECTRONIC | Threshold currents | Wavelengths | Lasers | Epitaxy | Stacks | Tunnel junctions | Dielectrics | Photonics
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2005, Volume 87, Issue 24, pp. 243107 - 243107-3
InAs quantum-dot (QD) laser structures are grown on (113)B-oriented InP substrate by gas-source molecular-beam epitaxy. Following an optimized growth... 
ROOM-TEMPERATURE | PHYSICS, APPLIED | 1.55 MU-M | EMISSION | Photonic | Engineering Sciences | Optics
Journal Article
Electronics Letters, ISSN 0013-5194, 4/2014, Volume 50, Issue 9, pp. 690 - 692
Narrow linewidth terahertz (THz) generation using a cascaded Brillouin fibre laser structure and a unitravelling carrier photodiode is investigated. Using two... 
Photonics | 1.55 MU-M | PHOTOMIXER | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Laser Physics Letters, ISSN 1612-2011, 12/2017, Volume 14, Issue 12, p. 125801
A kind of bottom mirror, fabricated using a nano-scale epitaxy method, is proposed for long-wavelength InP-based vertical-cavity surface-emitting lasers... 
bottom mirrors | distributed Bragg reflectors | vertical-cavity surface-emitting lasers | nano-scale epitaxial lateral overgrowth | GRATINGS | PHYSICS, APPLIED | OPERATION | SILICON | 1.55 MU-M | INP | OPTICS
Journal Article