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IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, 11/2015, Volume 21, Issue 6, pp. 287 - 299
Journal Article
OPTICAL AND QUANTUM ELECTRONICS, ISSN 0306-8919, 03/2008, Volume 40, Issue 2-4, pp. 155 - 165
We report on the thermal design and the characterization of InP-based 1.55 mu m wavelength large diameter (similar to 100 mu m) optically pumped vertical... 
CIRCULAR TEM00 BEAMS | CAVITY | DIODE | external cavity laser | ENGINEERING, ELECTRICAL & ELECTRONIC | 1.55-MU-M | VCSELS | vertical cavity surface emitting semiconductor laser | CONDUCTIVITY | INJECTION | DBR | single mode laser | thermal dissipation | 1.55 mu m laser emission | EMITTING SEMICONDUCTOR-LASER | INDEX | OPTICS
Journal Article
OPTICAL AND QUANTUM ELECTRONICS, ISSN 0306-8919, 12/2006, Volume 38, Issue 15, pp. 1269 - 1278
We report on the design, fabrication, and characterization of InP-based 1.55 mu m wavelength large diameter (50 mu m) electrically pumped vertical external... 
ROOM-TEMPERATURE | OUTPUT | DIODE | external cavity laser | HIGH-POWER | tunnel junction | ENGINEERING, ELECTRICAL & ELECTRONIC | vertical cavity surface emitting semiconductor laser | semiconductor Bragg reflector | SURFACE-EMITTING LASERS | OPERATION | WAVELENGTH | 1.55 mu m laser emission | OPTICS | BURIED TUNNEL-JUNCTION | SEMICONDUCTOR-LASER
Journal Article
PHYSICA B-CONDENSED MATTER, ISSN 0921-4526, 10/2016, Volume 498, pp. 21 - 26
An Er3+-doped Gd2SiO5 single crystal with high optical quality has been grown by the Czochralski method. Polarized absorption and fluorescence spectra and... 
CONTINUOUS-WAVE | PHYSICS, CONDENSED MATTER | UP-CONVERSION | Spectroscopic property | 1.55 mu m laser | OPTICAL-TRANSITION PROBABILITIES | DIODE-PUMPED ER | SPECTRAL PROPERTIES | GSO SINGLE-CRYSTAL | RARE-EARTH IONS | STIMULATED-EMISSION | Er3+:Gd2SiO5 crystal | ENERGY-TRANSFER | ABSORPTION
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2005, Volume 87, Issue 24, pp. 243107 - 243107-3
InAs quantum-dot (QD) laser structures are grown on (113)B-oriented InP substrate by gas-source molecular-beam epitaxy. Following an optimized growth... 
ROOM-TEMPERATURE | PHYSICS, APPLIED | 1.55 MU-M | EMISSION | Photonic | Engineering Sciences | Optics
Journal Article
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, ISSN 0021-4922, 10/2007, Volume 46, Issue 10A, pp. 6903 - 6905
This article reports the improvement of broad area lasers epitaxially grown on InP(311)B substrate. Thanks to optimized growth techniques, a high density of... 
1.55-MU-M | quantum dots | PHYSICS, APPLIED | semiconductor laser | ROOM-TEMPERATURE OPERATION | WAVELENGTH | 1.55 MU-M | DASH LASERS | INP | InP substrate | GAIN | FEEDBACK
Journal Article
Optical and Quantum Electronics, ISSN 0306-8919, 03/2006, Volume 38, Issue 4, pp. 369 - 379
Journal Article
PHOTONICS AND NANOSTRUCTURES-FUNDAMENTALS AND APPLICATIONS, ISSN 1569-4410, 12/2018, Volume 32, pp. 42 - 46
Quantum dot microlasers are promising for application in photonic integrated circuits and lab-on-a-chip systems. In this article, we sought to design an... 
PHYSICS, APPLIED | NANOCAVITY | CAVITIES | Photonic crystal | InAs quantum dot | MATERIALS SCIENCE, MULTIDISCIPLINARY | Laser | 1.55 mu m telecom band | NANOSCIENCE & NANOTECHNOLOGY | OPTICS | EMISSION
Journal Article
NANOTECHNOLOGY, ISSN 0957-4484, 03/2014, Volume 25, Issue 10
We have studied the optical properties of PbSe colloidal quantum dot-solution filled hollow core multimode silica waveguides as a function of quantum... 
PHYSICS, APPLIED | SOLAR-CELLS | LASERS | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | NOISE | 1.55 mu m emission | BAND | SEMICONDUCTOR NANOCRYSTALS | liquid-core optical fiber | AMPLIFIER | PbSe quantum dots | EMISSION | guided spontaneous emission | GAIN
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2009, Volume 94, Issue 24, pp. 241113 - 1/3
InAs columnar quantum dash (CQDash) structures on (100) InP have been realized by gas source molecular beam epitaxy for stacking numbers of up to 24. Laser... 
laser cavity resonators | molecular beam epitaxial growth | PHYSICS, APPLIED | photoluminescence | quantum dash lasers | indium compounds | OPTICAL AMPLIFIERS | DOTS | INP | semiconductor growth | electroluminescence | laser beams | 1.55 MU-M | III-V semiconductors
Journal Article
JOURNAL OF ALLOYS AND COMPOUNDS, ISSN 0925-8388, 10/2015, Volume 647, pp. 159 - 166
By applying the band anticrossing model combined with the envelope function formalism, a theoretical study of optoelectronic properties of lattice matched... 
SUPERLATTICE | SEMICONDUCTORS | MATERIALS SCIENCE, MULTIDISCIPLINARY | METALLURGY & METALLURGICAL ENGINEERING | MOLECULAR-BEAM EPITAXY | CHEMISTRY, PHYSICAL | GaNAsBi-based MQWs | Absorption coefficient | BAND-STRUCTURE | BAC model | PHOTODETECTOR | GAAS | Coupling effect | GAINNAS | ALLOYS | QUANTUM-WELL LASERS | Effective mass | Emission of 1.55 mu m | GANYAS1-X-YBIX
Journal Article
Journal of Quantitative Spectroscopy and Radiative Transfer, ISSN 0022-4073, 01/2014, Volume 133, pp. 311 - 318
Journal Article
Applied Optics, ISSN 1559-128X, 02/2013, Volume 52, Issue 6, pp. 1317 - 1324
Time-dependent model is presented to simulate random lasers in the presence of an inhomogeneous gain medium. PbSe quantum dots (QDs) with an arbitrary size... 
DOPED FIBER AMPLIFIER | LIGHT | DEVICE | ACTIVE RANDOM-MEDIA | 1.55 MU-M | NOISE | BAND | OPTICS | EMISSION | SCATTERING | Usage | Optical properties | Analysis | Gaussian distribution | Lead compounds | Polarization (Light) | Maxwell equations | Methods
Journal Article
IEEE JOURNAL OF QUANTUM ELECTRONICS, ISSN 0018-9197, 05/2012, Volume 48, Issue 5, pp. 643 - 650
An electroplated copper substrate was evaluated for heat dissipation in 1.55-mu m optically pumped vertical extended cavity surface emitting lasers... 
1.55-mu m laser emission | PHYSICS, APPLIED | OUTPUT | SEMICONDUCTOR DISK LASER | HIGH-POWER | ENGINEERING, ELECTRICAL & ELECTRONIC | VCSELS | SURFACE-EMITTING LASERS | OPERATION | optically pumped vertical extended cavity surface emitting lasers (OP-VECSELs) | 1.55 MU-M | OPTICS | WAFER FUSION | electro-plating | thermal management
Journal Article
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, ISSN 0021-4922, 04/2006, Volume 45, Issue 4B, pp. 3423 - 3426
We have developed antimonide-based quantum-dot vertical-cavity Surface-emitting laser (Sb-based QD-VCSEL) structures for operation in the 1.3 and 1.55 mu m... 
laser diode | PHYSICS, APPLIED | VCSEL | quantum dot | optical communications | MU-M | 1.3 and 1.55 mu m wavelengths | GaAs | InGaSb
Journal Article
Physical Review B, ISSN 1098-0121, 2009, Volume 80, Issue 4, pp. 045315 - 1/5
We demonstrate the coupling of a single InAs/InP quantum dash, emitting around 1.55 µm, to a slow-light mode in a two-dimensional photonic crystal on Bragg... 
LASER OPERATION | PHYSICS, CONDENSED MATTER | WAVE-GUIDES | SILICON | 1.55 MU-M | DOTS | MICROCAVITY | BOXES | BRAGG REFLECTION | INDIUM ARSENIDES | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY | COUPLING | SIMULATION | THREE-DIMENSIONAL CALCULATIONS | TWO-DIMENSIONAL CALCULATIONS | QUANTUM DOTS | CRYSTALS | INDIUM PHOSPHIDES | EMISSION | SEMICONDUCTOR MATERIALS | SURFACES
Journal Article
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