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Nano Letters, ISSN 1530-6984, 02/2014, Volume 14, Issue 2, pp. 813 - 818
We report on a highly compact, one diode–one resistor (1D–1R) nanopillar device architecture for SiO x -based ReRAM fabricated using nanosphere lithography... 
SiO | 1D-1R | ReRAM | Nanosphere Lithography | nanopillar
Journal Article
NANO LETTERS, ISSN 1530-6984, 02/2014, Volume 14, Issue 2, pp. 813 - 818
We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography... 
PHYSICS, CONDENSED MATTER | NANOCROSSBAR | PHYSICS, APPLIED | OXIDE | MATERIALS SCIENCE, MULTIDISCIPLINARY | DEVICE | CHEMISTRY, PHYSICAL | 1D-1R | NANOSCIENCE & NANOTECHNOLOGY | Nanosphere Lithography | CHEMISTRY, MULTIDISCIPLINARY | nanopillar | SiOx | ReRAM
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 04/2013, Volume 34, Issue 4, pp. 508 - 510
Different HfO x -based resistive random access memory stacks with Ni-containing electrodes, including NiSi and Ni(Ge 1-x Si x ), which can be easily formed on... 
NiSi {\rm Ni}({\rm Ge}_{{\bf 1-x}}~{\rm Si}_{{\bf x}}) | Switches | {\rm HfO}_{\bf x} | 1D-1R | Electrodes | Resistance | 1T-1R | Tin | Nickel | Silicon | Hafnium compounds | resistive random access memory (RRAM) | CMOS compatible integration scheme | HfO | NiSi Ni(Ge | HfOx | NiSi Ni(Ge1-x Si-x) | HIGH-SPEED | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal of the Korean Physical Society, ISSN 0374-4884, 12/2010, Volume 57, Issue 61, pp. 1816 - 1819
The polymer random access memory (PoRAM) has various excellent electrical and mechanical properties, such as small cell feature sizes, high density... 
Nonvolatile memory | Operation method | Polymer memory | 1D-1R cell | MEMORY | PHYSICS, MULTIDISCIPLINARY
Journal Article
4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015, 06/2015
Conference Proceeding
AIP Conference Proceedings, ISSN 0094-243X, 2011, Volume 1399, Issue 1, pp. 853 - 854
We report on the development of one-diode and one-resistor (1D-1R) hybrid-type devices consisting of inorganic Schottky diodes and organic unipolar memory,... 
inorganic Schottky diode | one-diode and one-resistor (1D-1R) | organic unipolar memory | Resistors | Memory devices | Schottky diodes | Conferences | Data storage | Devices | Arrays | Switching
Conference Proceeding
2016 IEEE Advanced Information Management, Communicates, Electronic and Automation Control Conference (IMCEC), 10/2016, pp. 830 - 834
Crossbar is the basic structure for RRAM massive applications, while as the increase of integration level and density of RRAM crossbar array, the line... 
bias scheme | Switches | Lead | 1D-1R | RRAM | write scheme | line resistance | crossbar array | Write scheme | Crossbar array | Line resistance | Bias scheme
Conference Proceeding
2015 International Symposium on Next-Generation Electronics (ISNE), ISSN 2378-8593, 05/2015, pp. 1 - 2
In this work, one diode-one resistor (1D-1R) SiO x -based resistive switching (RS) elements were fabricated using PN Si diode as a selector to eliminate... 
SiO x | Optical switches | Metals | Programming | 1D-1R | ReRAM | Silicon | Semiconductor diodes | unipolar | Optimization
Conference Proceeding
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