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IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2019, Volume 66, Issue 1, pp. 106 - 115
The compact model of HIroshima-University Starc Igfet Model (HiSIM)_GaN for GaN-HEMT devices is reported, which solves the Poisson equation iteratively, in a... 
Semiconductor device modeling | Electric potential | Poisson equations | compact model | GaN | HEMT | 2-D electron gas (2-DEG) | surface potential | Wide band gap semiconductors | Mathematical model | Gallium nitride | Aluminum gallium nitride
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 10/2015, Volume 36, Issue 10, pp. 1008 - 1010
AlGaN/GaN-based fin-shaped field-effect transistors with very steep side-wall have been fabricated by utilizing electron-beam lithography and subsequent... 
perpendicular fin | subthreshold swing | FinFET | broad gm | Gallium nitride | MODFETs | AlGaN/GaN | Logic gates | HEMTs | TMAH solution | FinFETs | Wide band gap semiconductors | 2-DEG | Aluminum gallium nitride | Subthreshold swing | broad g | GAN | broad g(m) | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 06/2014, Volume 35, Issue 6, pp. 612 - 614
In this letter, a macromodel for normally-off (enhancement mode) AlGaN/GaN-based FinFET (2-DEG channel at top with two MOS like sidewall channels) is proposed.... 
compact model | Logic gates | HEMTs | tri-gate | FinFETs | Data models | III-V FinFET | Gallium nitride | 2-DEG | Aluminum gallium nitride | AlGaN/GaN | ALGAN/GAN HEMTS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2017, Volume 64, Issue 3, pp. 1015 - 1019
In this paper, we report on the prospect of achieving very high values (≥ 10 13 cm -2 ) of 2-D electron gas (2-DEG) density in ZnO-based heterostructures... 
Buffer layers | Electrical engineering | MgZnO/CdZnO heterostructure | II-VI semiconductor materials | Photonic band gap | Atomic layer deposition | Lattices | Zinc oxide | polarization | 2-D electron gas (2-DEG) density | Zinc compounds | Chemical properties | Research | Electric properties
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2019, Volume 66, Issue 8, pp. 3310 - 3317
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2019, Volume 66, Issue 11, pp. 4679 - 4684
In this article, we illustrate the impact of the high electric field region and the effects of this has on the capacitance-voltage characteristics of a GaN... 
2-D electron gas (2-DEG) | gate charge | Gallium nitride | MODFETs | Electrodes | channel length modulation (CLM) | carrier velocity saturation | compact model | TCAD | Logic gates | HEMTs | Capacitance | Mathematical model | GaN HEMT | CAPACITANCE MODEL | PHYSICS, APPLIED | DEVICE | P-N-JUNCTION | ALGAN/GAN | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2019, Volume 66, Issue 1, pp. 106 - 115
The compact model of HIroshima-University Starc Igfet Model (HiSIM)_GaN for GaN-HEMT devices is reported, which solves the Poisson equation iteratively, in a... 
surface potential | compact model | GaN | HEMT | 2-D electron gas (2-DEG) | PHYSICS, APPLIED | FIELD-EFFECT TRANSISTORS | ALGAN/GAN | REGION | ENGINEERING, ELECTRICAL & ELECTRONIC | DENSITY | OPERATION | PLATE | POWER DEVICES | Collapse | Semiconductor devices | Computer simulation | Gallium nitrides | Dependence | Two dimensional models | Poisson equation | Time constant
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 09/2017, Volume 64, Issue 9, pp. 3634 - 3638
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 09/2019, Volume 217, p. 111107
InAlAs/InGaAs metamorphic high-electron-mobility transistors (MHEMTs) on GaAs substrates are fabricated. Two kinds of gate-recess schemes—nonselective and... 
InGaAs | Selective etching | InAlAs | 2-DEG | MHEMT | PHYSICS, APPLIED | ACID | PERFORMANCE | NANOSCIENCE & NANOTECHNOLOGY | INP | ENGINEERING, ELECTRICAL & ELECTRONIC | INGAAS/INALAS | TEMPERATURE | HEMTS | OPTICS | Temperature dependence | Indium gallium arsenides | Semiconductor devices | Gallium arsenide | Electron mobility | Indium aluminum arsenides | Leakage current | Transistors | Substrates | Transconductance | Electrons
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 04/2017, Volume 64, Issue 4, pp. 1528 - 1534
Journal Article
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