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by Hu, AQ and Song, CY and Yang, XL and He, XY and Shen, B and Guo, X
NANOTECHNOLOGY, ISSN 0957-4484, 08/2019, Volume 30, Issue 31, p. 314002
We identify the spatially resolved trapping mechanism and clarify the role of the unintentionally doped (UID) GaN layer in suppressing the two-dimensional... 
AlGaN/GaN on Si | TRANSISTORS | PHYSICS, APPLIED | CARBON | UID GaN | MATERIALS SCIENCE, MULTIDISCIPLINARY | hole trapping | HEMTS | NANOSCIENCE & NANOTECHNOLOGY | 2DEG degradation
Journal Article
Solid State Electronics, ISSN 0038-1101, 07/2017, Volume 133, pp. 31 - 37
In this paper, we report a new phenomenon in C-V measurement of different gate length MIS-HEMTs, which can be associated with traps character of the AlGaN/GaN... 
AlGaN/GaN metal-insulation-semiconductor high electron mobility transistors (MIS-HEMTs) | Frequency dependent capacitance-voltage measurement | Residual stress | Interface traps | PHYSICS, CONDENSED MATTER | TRANSPORT | IMPACT | PHYSICS, APPLIED | TRAPS | 2DEG | PERFORMANCE | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal of Electrical Engineering, ISSN 1335-3632, 09/2014, Volume 65, Issue 5, pp. 313 - 316
Electrical properties of recessed and non-recessed AlGaN/GaN Schottky diodes under off-state stress were investigated. The samples were consecutively stressed... 
off-state stress | traps | 2DEG | recess | AlGaN/GaN Schottky diode | Traps | Recess | Off-state stress | GATE LEAKAGE CURRENT | HETEROSTRUCTURES | ENGINEERING, ELECTRICAL & ELECTRONIC | Degradation | Volt-ampere characteristics | Stresses | Schottky diodes | Electrical properties | Gallium nitrides | Aluminum gallium nitrides | Devices
Journal Article
Japanese journal of applied physics. Pt. 2, Letters, ISSN 0021-4922, 02/1994, Volume 33, Issue 2B, pp. L260 - L262
Damage caused by selective dry etching was examined for δ-doped AlGaAs/InGaAs HEMT structures by using Hall mesurements of two-dimensional-electron-gas (2DEG)... 
δ-dope | 2DEG | Dry etching | HEMT | Mobility | Damage | RIE | PHYSICS, APPLIED | DRY ETCHING | MOBILITY | HETEROSTRUCTURES | DELTA-DOPE | DAMAGE | MODULATION
Journal Article
2012 International Conference on Devices, Circuits and Systems (ICDCS), 03/2012, pp. 558 - 562
AlGaN/GaN HEMT is the forefront of semiconductor research because of its exciting physical properties and it is the choice of suitable candidate for high power... 
surface states | self heating | 2DEG | Heating | HEMT | HEMTs | degradation | polarization | Reliability | Gallium nitride | Piezoelectric polarization | charge trapping | reliability
Conference Proceeding
4th IEEE Conference on Nanotechnology, 2004, 2004, pp. 284 - 286
Room temperature DC and broadband HF measurements of a double Y-branch junction are presented and discussed. Nonlinear DC characteristics of the devices at... 
Radio frequency | Temperature measurement | Degradation | Rectifiers | Electric variables measurement | Hafnium | Voltage | Coplanar waveguides | Electrons | Equivalent circuits | Nonlinear | 2DEG | Ballistic | Y-branch junction | HF measurements | Nanotechnology | Room temperature
Conference Proceeding
Nanoscale Research Letters, ISSN 1931-7573, 2015, Volume 10, Issue 1, pp. 109 - 109
Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance... 
ALD | 2DEG | AlGaN/GaN HEMT | MISHEMT | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | DEVICES | NANOSCIENCE & NANOTECHNOLOGY | Thin films | Aluminum compounds | Dielectric films | Transistors | Methods
Journal Article
Solid State Electronics, ISSN 0038-1101, 09/2018, Volume 147, pp. 35 - 38
•A gate-drain separation structure for use in temperature transient measurements was proposed.•The effect of 2DEG on the temperature transients in horizontal... 
Forward Schottky junction voltage | GaN | Heat transfer | Two-dimensional electron gas (2DEG) | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | HEMTS | ENGINEERING, ELECTRICAL & ELECTRONIC | Transistors | Analysis
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 07/2019, Volume 215, p. 110976
Journal Article
Applied Surface Science, ISSN 0169-4332, 10/2007, Volume 254, Issue 1, pp. 36 - 39
In order to apply two-dimensional electron-gas-field-effect-transistors (2DEG-FETs) for cell-viability sensors, we investigated the chemical/electrical... 
Cell culture | Sol-gel technique | 2DEG-FETs | TiO | Bio-sensors | GaAs | ISFET | PHYSICS, CONDENSED MATTER | bio-sensors | PHYSICS, APPLIED | ALVEOLAR EPITHELIAL-CELLS | CHEMISTRY, PHYSICAL | POLYOMA VIRUS | sol-gel technique | FIELD-EFFECT TRANSISTORS | cell culture | DEVICES | MATERIALS SCIENCE, COATINGS & FILMS | TiO2
Journal Article
physica status solidi c, ISSN 1862-6351, 03/2012, Volume 9, Issue 3‐4, pp. 938 - 941
We investigated the impact of SF6 plasma treatments on the electronic transport properties of GaN/AlGaN/GaN heterostructures by employing different plasma... 
2DEG properties | plasma treatment | AlGaN/GaN‐HEMT | fluorine | AlGaN/GaN-HEMT | Plasma treatment | Fluorine
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 2005, Volume 81, Issue 2, pp. 194 - 200
We report on DC and broadband HF to DC conversion measurements of a Double Y-branch junction. Nonlinear DC characteristics of the devices are observed and HF... 
Nonlinear | 2DEG | Y-branch junction | Ballistic transport | HF measurements | Room temperature | Nanotechnology | room temperature | PHYSICS, APPLIED | Y-BRANCH SWITCH | DEVICE | NANOSCIENCE & NANOTECHNOLOGY | nonlinear | ENGINEERING, ELECTRICAL & ELECTRONIC | 50 GHZ | NANOELECTRONICS | OPERATION | GAN | JUNCTIONS | FREQUENCY | nanotechnology | OPTICS | ELECTRON-TRANSPORT | ballistic transport
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 02/2020, Volume 67, Issue 2, pp. 588 - 594
This article presents an analytical model for enhancement-mode GaN devices for high-power application. The model is developed specifically for a GaN gate... 
gate-injection transistor (GIT) | self-heating | AlGaN/GaN heterostructure | carrier spill-over | high electron mobility transistor (HEMT) | two-dimensional electron gas (2DEG)
Journal Article
Solid State Electronics, ISSN 0038-1101, 2000, Volume 44, Issue 8, pp. 1361 - 1365
Plasma-induced damage often reduces the electrical and optical performance and the lifetime of compound semiconductor devices. We have investigated the effect... 
Heterostructure | Transistor | Plasma damage | 2DEG | GaN | AlGaN | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | PROGRESS | plasma damage | heterostructure | transistor | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Applied Surface Science, ISSN 0169-4332, 2007, Volume 254, Issue 1, pp. 36 - 39
In order to apply two-dimensional electron-gas-field-effect-transistors (2DEG-FETs) for cell-viability sensors, we investigated the chemical/electrical... 
Cell culture | Bio-sensors | Sol–gel technique | 2DEG-FETs | TiO 2 | GaAs
Journal Article
Microelectronics Journal, ISSN 0026-2692, 2009, Volume 40, Issue 8, pp. 1161 - 1165
Deep levels in AlGaN/GaN high electron mobility transistors (HEMTs) on SiC substrate are known to be responsible for trapping processes like: threshold voltage... 
Sic substrate | 2DEG and hole-like | CDLTS | HEMT | Deep levels | AlGaN/GaN | DEFECTS | TRAPS | MOLECULAR-BEAM EPITAXY | TRANSCONDUCTANCE | ELECTRON-MOBILITY TRANSISTORS | NANOSCIENCE & NANOTECHNOLOGY | CENTERS | ENGINEERING, ELECTRICAL & ELECTRONIC | CURRENT TRANSIENT SPECTROSCOPY | FREQUENCY DISPERSION | N-TYPE GAN | Liquors | Silicon | Silicon carbide | Transistors
Journal Article
Materials Science & Engineering B, ISSN 0921-5107, 1998, Volume 51, Issue 1, pp. 202 - 206
We have regrown, on ex situ patterned GaAs substrates, using hydrogen radical decontamination, two-dimensional electron gases (2DEGs) confined in 15 nm quantum... 
Regrowth | Hydrogen decontamination | 2DEG
Journal Article
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