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4h-sic (306) 306
physics, applied (109) 109
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stacking faults (15) 15
wafer (15) 15
chemical-vapor-deposition (14) 14
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substrates (14) 14
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dependence (10) 10
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Journal of Physics D: Applied Physics, ISSN 0022-3727, 01/2015, Volume 48, Issue 2, pp. 25103 - 7
Journal Article
2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), ISSN 1662-9752, 09/2016, Volume 897, pp. 1 - 1
The epitaxial growth of ~250 μm thick 4H-SiC epilayers has been demanded for ultra-high-voltage power devices... 
Insulated gate bipolar transistors | Temperature measurement | Silicon carbide | Atom optics | Stacking | Thick epilayer | Epitaxial growth | 4H-SiC | Inductors | Surface roughness
Conference Proceeding
Crystal research and technology (1979), ISSN 0232-1300, 2018, Volume 53, Issue 9, pp. 1700234 - n/a
Shockley‐type in‐grown stacking faults (IGSFs) in 4H‐SiC epilayers are studied. Most of the IGSFs are observed to be of triangular shape in the samples... 
cathodoluminescence | photoluminescence | in‐grown stacking faults | 4H‐SiC | epitaxial growth | 4H-SiC | in-grown stacking faults | DEFECT FORMATION | SIC PIN DIODES | CHEMICAL-VAPOR-DEPOSITION | EPITAXIAL-GROWTH | CRYSTALLOGRAPHY | SCHOTTKY-BARRIER DIODES | LAYERS | BASAL-PLANE DISLOCATIONS | SPIRAL GROWTH | FACE | Epitaxy | Silicon carbide
Journal Article
2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), ISSN 1662-9752, 09/2016, Volume 897, pp. 1 - 1
Conference Proceeding
Applied Surface Science, ISSN 0169-4332, 02/2016, Volume 364, pp. 892 - 895
•Processing and electrical characterization of MOS capacitors fabricated on 4H-SiC epilayers grown on 2... 
MOS | SiO2/SiC | Interface states | 4H-SiC | 2°-Off axis | SiO | SiC | 2.-Off axis
Journal Article
Materials science forum, ISSN 0255-5476, 06/2015, Volume 821-823, pp. 327 - 330
We have investigated the effect of thermal oxidation on stacking faults (SFs) in 4H-SiC epilayers using photoluminescence imaging... 
Basal plane dislocation | Stacking faults | 4H-SiC | Photoluminescence imaging | Thermal oxidation | Faults | Lasers | Photoluminescence | Irradiation | Oxidation | Laser arrays | Dislocations
Journal Article
Materials science forum, ISSN 0255-5476, 06/2018, Volume 924, pp. 155 - 159
In-grown stacking faults (IGSFs) generated in 4H-SiC epilayers were characterized... 
Transmission electron microscopy | Epitaxial growth | 4H-SiC | Cathodoluminescence | In-grown stacking faults | Photoluminescence | Stacking faults
Journal Article
Materials science forum, ISSN 0255-5476, 05/2016, Volume 858, pp. 663 - 666
...: 2016-01-02 2016 Trans Tech Publications, Switzerland Online: 2016-05-24 Processing and characterization of MOS capacitors fabricated on 2-off axis 4H-SiC epilayers M... 
MOS | SiO2/SiC | Interface states | 2°-off axis | 4H-SiC | Silicon carbide | Electrical properties | Capacitors | Breakdown | Oxides | Devices | MOSFETs | Standards
Journal Article
Materials science forum, ISSN 0255-5476, 06/2015, Volume 821-823, pp. 323 - 326
...) characterization and identification on 4H-SiC epilayers. The purpose of this technique is to make a spectroscopic picture from a collection of PL imaging picture taken at different output wavelengths in order to both display the shape and an approximation... 
PL imaging spectroscopy | Stacking faults | PL imaging | 4H-SiC | Photoluminescence | Pictures | Spectroscopy | Approximation | Wavelengths | Imaging | Spectra
Journal Article
Superlattices and Microstructures, ISSN 0749-6036, 11/2016, Volume 99, pp. 197 - 201
We investigated the gamma-ray irradiation effect on 4H-SiC device process-induced defects by photoluminescence (PL) imaging and deep level transient... 
Deep level transient spectroscopy (DLTS) | Stacking fault | Photoluminescence (PL) imaging | 4H-SiC | Gamma-ray irradiation | Basal plane dislocation (BPD) | PHYSICS, CONDENSED MATTER | PROTON | Gamma rays | Nuclear energy | Silicon carbide | Photoluminescence
Journal Article
Materials science forum, ISSN 0255-5476, 05/2016, Volume 858, pp. 341 - 344
.... This multilayer model uses measured values (such as doping profile, point defect concentration and capture cross sections, epilayer thickness... 
defect | Surface recombination | 4H-SiC | μ-PCD | Carrier lifetime | Multilayers | Time dependence | Computer simulation | Decay | Constants | Mathematical models | Minority carriers | Diffusion
Journal Article
Materials science forum, ISSN 0255-5476, 01/2013, Volume 740-742, pp. 181 - 184
By using hot-wall CVD method, thick heavily Al-doped 4H-SiC epilayers (~90 μm) were grown on 3-inches 4H-SiC wafers... 
Hot-wall CVD | Heavily Al-doped | Low resistivity | Thick epilayer | P-type 4H-SiC | Aluminum | Electrical resistivity | Solubility | Surface chemistry | Dopants | Materials science | Activation | Chemical vapor deposition
Journal Article
Materials science forum, ISSN 0255-5476, 05/2012, Volume 717-720, pp. 279 - 284
.... Recently, low-doped epilayers with carrier lifetimes in excess of this have been demonstrated, thus approaching a goal that has been pursued for over a... 
Recombination | 4H-SiC | Carrier lifetime | Defects
Journal Article
中国物理B:英文版, ISSN 1674-1056, 2012, Volume 21, Issue 4, pp. 548 - 554
The infrared reflectance spectra of both 4H SiC substrates and epilayers are measured in a wave number range from 400 cm 1 to 4000 cm-1 using a Fourier-transform spectrometer... 
红外反射 | 碳化硅衬底 | 光谱表征 | 外延层 | 4H-SiC | 傅立叶变换光谱仪 | 傅里叶变换 | 载流子浓度 | electrical properties | epilayer thickness | infrared reflectance | 4HSiC | CARRIER CONCENTRATION | RAMAN-SCATTERING | PHYSICS, MULTIDISCIPLINARY | MOBILITY | Reflectivity | Fourier transforms | Correlation | Wavelengths | Infrared | Electrical properties | Spectra | Carrier density | Reflectance
Journal Article
Materials science forum, ISSN 0255-5476, 02/2014, Volume 778-780, pp. 151 - 154
The defect evolution on 90 μm-thick heavily Al-doped 4H-SiC epilayers with Al doping level higher than 1020 cm-3 was studied by tracing back to initial growth stage to monitor major dislocations and their propagations in each growth stage... 
Misfit dislocation | Topography | Heavily al-doped | Thick epilayer | 4H-SiC | Dislocation evolution | Heavy doping | Lattice relaxation | Aluminum | Doping | Monitors | Evolution | Etching | X-ray topography | Dislocations | Defects
Journal Article
Materials science forum, ISSN 0255-5476, 06/2015, Volume 821-823, pp. 339 - 342
In this report we were able to successfully identify and localize in 3D 3C and 6H foreign polytypes and stress in the embedded epilayer by high resolution 3D Raman spectroscopy, that were otherwise... 
CVD | MOSFET | JFET | Raman | Epitaxial growth | 4H-SiC | SiC
Journal Article
Materials science forum, ISSN 0255-5476, 07/2012, Volume 725, pp. 27 - 30
Morphologies of basal plane dislocations (BPDs) in 4H-SiC epilayers doped with nitrogen or aluminum are explained in detail... 
Si-core partial dislocation | C-core partial dislocation | Epitaxial layers | Morphology | Doping | 4H-SiC | Basal plane dislocation (BPD) | Stress
Journal Article
Materials science forum, ISSN 0255-5476, 02/2014, Volume 778-780, pp. 210 - 213
...m/h while maintaining the step-flow growth mode. Such epilayers exhibit quite low total concentrations of point defects less than 2 x 1013 cm-3... 
CVD | Chloride assisted growth | 4H-SiC epitaxy | Carrier lifetime | Materials science | Hydrogen chlorides | Point defects | Devices | Chemical vapor deposition | Defects
Journal Article
Japanese Journal of Applied Physics, Part 2: Letters, ISSN 0021-4922, 06/2005, Volume 44, Issue 24-27, pp. L806 - L808
We investigate basal plane dislocations (BPDs) in thick 4H-SiC(0001) epilayers and the formation of stacking faults in the active region of pin diodes... 
Basal plane dislocation | Stacking fault | Epitaxial growth | 4H-SiC | STACKING-FAULT FORMATION | stacking fault | VOLTAGE | PHYSICS, APPLIED | epitaxial growth | EPITAXIAL-GROWTH | basal plane dislocation
Journal Article
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