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Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 03/2010, Volume 81, Issue 12
We have observed the formation of graphene on SiC by Si sublimation in an Ar atmosphere using low-energy electron microscopy, scanning tunneling microcopy, and... 
6H-SIC | PHYSICS, CONDENSED MATTER
Journal Article
Bioorganic & Medicinal Chemistry, ISSN 0968-0896, 08/2012, Volume 20, Issue 15, pp. 4635 - 4645
Journal Article
Bioorganic & Medicinal Chemistry, ISSN 0968-0896, 01/2014, Volume 22, Issue 2, pp. 848 - 855
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 07/2007, Volume 76, Issue 4
We present a scanning-tunneling microscopy (STM) study of a gently graphitized 6H-SiC(0001) surface in ultrahigh vacuum. From an analysis of atomic scale... 
6H-SIC | GAS | PHYSICS, CONDENSED MATTER | HETEROEPITAXIAL GRAPHITE | DEFECTS | STM
Journal Article
Journal of Solid State Chemistry, ISSN 0022-4596, 02/2013, Volume 198, pp. 262 - 269
The compound 6H-BaFeO2F (P63/mmc) was synthesised by the low temperature fluorination of 6H-BaFeO3–d using polyvinylidenedifluoride (PVDF) as a fluorination... 
Magnetic structure | Hexagonal perovskite | Fluorination | PVDF | 6H–BaFeO2F | 6H-BaFeO | SYSTEM | BAFEO3-DELTA | CHEMISTRY, PHYSICAL | SR2FE2O5 | CHEMISTRY, INORGANIC & NUCLEAR | TEMPERATURE | 6H-BaFeO2F | OXIDE FLUORIDE BAFEO2F | PEROVSKITES
Journal Article
Accounts of Chemical Research, ISSN 0001-4842, 07/2016, Volume 49, Issue 7, pp. 1389 - 1400
Direct C–H bond activation is an important reaction in synthetic organic chemistry. This methodology has the potential to simplify reactions by avoiding the... 
CATELLANI ORTHO-ARYLATION | PALLADIUM/NORBORNENE CATALYSIS | REACTION SEQUENCE | NORBORNENE | PALLADIUM-CATALYZED SYNTHESIS | ALKYLATION | COUPLING REACTION | TOSYLHYDRAZONE INSERTION REACTION | ARYL IODIDES | 6H-DIBENZOPYRAN DERIVATIVES | CHEMISTRY, MULTIDISCIPLINARY
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 08/2018, Volume 124, Issue 5
E1/E2 defects are the typical negative-U centers in n-type 6H silicon carbide (SiC). They are the main contributors to non-radiative recombination, which... 
N-TYPE | PHYSICS, APPLIED | 6H-SILICON CARBIDE | TEMPERATURE-DEPENDENCE | SPECTROSCOPY | EPITAXIAL-GROWTH | INDUCED DEFECTS | SEMICONDUCTORS | 6H SILICON-CARBIDE | SURFACE RECOMBINATION | ELECTRONIC-STRUCTURE
Journal Article
JOURNAL OF PHYSICS-CONDENSED MATTER, ISSN 0953-8984, 12/2018, Volume 30, Issue 50, p. 505002
High resolution photoemission with synchrotron radiation was used to study the interface formation of a thin layer of C-60 on 6H-SiC(0001)-(3 x 3),... 
6H-SIC | INTERFACE FORMATION | PHYSICS, CONDENSED MATTER | 6H-SiC-(3 x 3) | CHEMISORPTION | RECONSTRUCTION | photoemission | ADSORPTION | HYDROGEN | molecular bonding | UPS | C-60 | ELECTRONIC-STRUCTURE | SURFACES | Condensed Matter | Physics | Other
Journal Article
Tetrahedron Letters, ISSN 0040-4039, 09/2016, Volume 57, Issue 37, pp. 4165 - 4169
[Display omitted] •Two facile method for the preparation of 6H-isoindolo[2,1-α]indol-6-ones.•Carbon monoxide as C1 building block.•One catalytic system, two... 
Carbonylation | Palladium-catalyzed | Carbon monoxide | 6H-Isoindolo[2,1-α]indol-6-one | VINYLIC HALIDES | CHEMISTRY, ORGANIC | YNAMIDES | 6H-Isoindolo[2,1-alpha]indol-6-one | NITROGEN | 0231B | ARYL | INHIBITORS | DERIVATIVES | CYCLIZATION | ACCESS | Palladium
Journal Article
Chemical communications (Cambridge, England), ISSN 1359-7345, 11/2014, Volume 50, Issue 88, pp. 13571 - 13574
A chemical-specific photoelectron diffraction structure determination of a carbon rich buffer layer on SiC is reported. In addition to the long-range ripple of... 
Journal Article
Journal of Physics: Condensed Matter, ISSN 0953-8984, 08/2008, Volume 20, Issue 32, pp. 323202 - 323202 (27)
The electronic properties of epitaxial graphene grown on SiC have shown its potential as a viable candidate for post-CMOS electronics. However, progress in... 
CARBON NANOTUBE FILMS | ELECTRONIC-PROPERTIES | INTERFACE FORMATION | PHYSICS, CONDENSED MATTER | THIN GRAPHITE FILMS | ATOMIC-STRUCTURE | 6H-SIC SURFACE | HETEROEPITAXIAL GRAPHITE | SCANNING-TUNNELING-MICROSCOPY | SILICON-CARBIDE | SURFACE DECOMPOSITION
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 04/2008, Volume 77, Issue 15
Thermally induced growth of graphene on the two polar surfaces of 6H-SiC is investigated with emphasis on the initial stages of growth and interface structure.... 
6H-SIC | ELECTRONIC-PROPERTIES | PHYSICS, CONDENSED MATTER | RECONSTRUCTION | AB-INITIO | CORE-LEVEL | GRAPHITE | LEED | BERRYS PHASE | HEXAGONAL SIC-SURFACES | BILAYER GRAPHENE
Journal Article
Physical Review Letters, ISSN 0031-9007, 04/2008, Volume 100, Issue 17, p. 176802
On the basis of first-principles calculations, we report that a novel interfacial atomic structure occurs between graphene and the surface of silicon carbide,... 
6H-SIC | INTERFACE FORMATION | ATOMIC-STRUCTURE | FILMS | PHYSICS, MULTIDISCIPLINARY | SIC SURFACES | GAS | HETEROEPITAXIAL GRAPHITE | NANOMESH | STATE | LEED
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 04/2008, Volume 77, Issue 16
We have analyzed by using scanning tunneling microscopy (STM) thin films made of few (three to five) graphene layers grown on the C terminated face of 6H-SiC... 
PHYSICS, CONDENSED MATTER | EPITAXIAL GRAPHENE | TEMPERATURE | GAS | GRAPHITIZATION | GRAPHITE | SIC | 6H-SIC(000OVER-BAR) SURFACE | STM
Journal Article
Advanced Materials, ISSN 0935-9648, 06/2009, Volume 21, Issue 22, pp. 2328 - 2333
Large‐area, few‐layer graphene is grown on a poly‐nickel substrate using optimized CVD conditions. High temperature, short growth time, and an optimal gas... 
Graphene | Chemical vapor deposition | Carbon | 6H-SIC | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | FILMS | SINGLE-LAYER | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | GRAPHITE | CHEMISTRY, MULTIDISCIPLINARY | CARBON NANOTUBES
Journal Article
Journal of the American Chemical Society, ISSN 0002-7863, 08/2007, Volume 129, Issue 34, pp. 10418 - 10422
Epitaxial graphene thermally grown on 6H-SiC(0001) can be p-type doped via a novel surface transfer doping scheme by modifying the surface with the electron... 
6H-SIC | VOLTAGE | RESOLUTION CORE-LEVEL | INTERFACE | AROMATIC THIOLS | GRAPHITE | C-60 | BERRYS PHASE | CHEMISTRY, MULTIDISCIPLINARY | BILAYER GRAPHENE | ELECTRONIC-STRUCTURE | Silicon compounds | Thermal properties | Observations | Epitaxy | Electric properties
Journal Article