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Applied Physics Letters, ISSN 0003-6951, 12/2012, Volume 101, Issue 26, p. 261114
An InAs/GaAs quantum dot infrared photodetector with strong, multicolor, broadband (5-20 mu m) photoresponse is reported. Using a combined quaternary... 
OPTICAL-PROPERTIES | 8-BAND | PHYSICS, APPLIED | TEMPERATURE | Gallium arsenides | Broadband | Infrared | Quantum dots | Gallium arsenide | Photodetectors | Indium arsenides | Strain
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 01/2005, Volume 71, Issue 4
Self-assembled quantum dots are often modeled by continuum models (effective mass or k.p) that assume the symmetry of the dot to be that of its overall... 
TRANSITION | PHOTOREFLECTANCE | PHYSICS, CONDENSED MATTER | 8-BAND | STRAIN DISTRIBUTION | WELL STRUCTURES | FIELD | NONUNIFORM COMPOSITION | GAAS | POLARIZATION | ELECTRONIC-STRUCTURE
Journal Article
Optik, ISSN 0030-4026, 02/2018, Volume 155, pp. 242 - 250
In this paper, we used the 8-band · model with valence force field considerations to investigate the effect of size and shape on electronic and optical... 
8-Band k · p method | CdSe quantum dots | 8-Band k.p method | OPTICS | SPECTRA | EMISSION | GAIN | DEPENDENCE | WELLS
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 11/2014, Volume 116, Issue 17, p. 173702
To stably employ multiband k.p model for analyzing the band structure in semiconductor heterostructures without spurious solutions (SSs), the Hermitian forward... 
MICROSTRUCTURES | EQUATIONS | DOT P THEORY | 8-BAND | PHYSICS, APPLIED | EFFECTIVE-MASS APPROXIMATION | Finite element method | Analysis | Dispersion measures (Statistics)
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 2006, Volume 74, Issue 24
A strained-modified, single-band, constant-potential three-dimensional model is formulated to study the dependence of electronic states of InAs/GaAs quantum... 
PHYSICS, CONDENSED MATTER | 8-BAND | EFFECTIVE-MASS | STRAIN DISTRIBUTION | HYDROSTATIC-PRESSURE | NANOSTRUCTURES | OPTICAL-TRANSITIONS | ABSORPTION | BAND | SPECTRA | DEPENDENCE
Journal Article
Physical Review Letters, ISSN 0031-9007, 11/2003, Volume 91, Issue 19, p. 196804/4
Scanning tunneling spectroscopy is used to investigate the single-electron states and the corresponding squared wave functions of single and freestanding... 
STATES | 8-BAND | STRAIN DISTRIBUTION | PHYSICS, MULTIDISCIPLINARY | ELECTRON-ELECTRON INTERACTION | INAS | FIELD | MICROSCOPE
Journal Article
PHYSICAL REVIEW B, ISSN 1098-0121, 10/2007, Volume 76, Issue 16
We present an explanation to the spurious solution problem affecting the k center dot p envelope function method, indicating that the problem is mathematically... 
MICROSTRUCTURES | PHYSICS, CONDENSED MATTER | 8-BAND | WIRES | EFFECTIVE-MASS APPROXIMATION | BOUNDARY-CONDITIONS | LATTICE BAND-STRUCTURE | SPECTRA | STRAIN | ELECTRONIC-STRUCTURE | QUANTUM DOTS
Journal Article
by Zhao, QJ and Mei, T
JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, 03/2011, Volume 109, Issue 6
We develop a complete Fourier transform k.p method and present its application for a theoretical investigation on electronic structures of quantum dots with... 
SPURIOUS SOLUTIONS | 8-BAND | PHYSICS, APPLIED | ENVELOPE-FUNCTION APPROXIMATION | STRAINED ZINCBLENDE CRYSTALS | SMALL SEMICONDUCTOR CRYSTALLITES | HETEROSTRUCTURES | MODEL
Journal Article
Superlattices and Microstructures, ISSN 0749-6036, 10/2018, Volume 122, pp. 181 - 193
In this paper, we theoretically report competition behaviour of size and strain effects on the InAs/GaAs quantum dots (QDs) eigenenergies, the envelop... 
Wetting layer | Continuum elastic theory | InGaAs/GaAs quantum dot | Strain | REDUCING LAYER | FIELDS | PHYSICS, CONDENSED MATTER | 8-BAND | OPTICAL-PROPERTIES | IMPURITY | PHOTOCURRENT | INTRABAND ABSORPTION | WAVELENGTH | DOT/WETTING LAYER | POLARIZATION
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 09/2011, Volume 110, Issue 5, pp. 053710 - 053710-7
The role of interfaces and higher bands on the electronic structure of embedded semiconductor quantum dots (QDs) was investigated. The term in the multiband... 
8-BAND | PHYSICS, APPLIED | SINGLE | K.P MODEL | INFRARED PHOTODETECTORS | DROPLET EPITAXY | CONDUCTION-BAND | INAS/GAAS | GAAS | STRAIN | ELECTRONIC-STRUCTURE | Technology application | Usage | Numerical analysis | Hamiltonian function | Semiconductors | Innovations | Electric fields | Methods | Quantum theory
Journal Article
PHYSICAL REVIEW B, ISSN 1098-0121, 06/1999, Volume 59, Issue 24, pp. 15806 - 15818
A "strained linear combination of bulk bands" method is introduced for calculating the single-particle electronic states of strained, million-atom... 
PHYSICS, CONDENSED MATTER | ENERGY | WIRES | STATES | 8-BAND | SUPERLATTICES | SEMICONDUCTOR QUANTUM DOTS | PSEUDOPOTENTIAL CALCULATION | P METHOD | EXCITONS
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 08/2018, Volume 33, Issue 9, p. 95018
In this work we present the modelling of InxGa1-xAs/InzGa1-zAs/In y 1-y Ga As metamorphic quantum dot nanostructures. These are of great recent interest as the... 
telecom windows | photoluminescence | single photon sources | modelling of quantum systems | metamorphic quantum dots | Type-II quantum confinement | PHYSICS, CONDENSED MATTER | 8-BAND | LASERS | MATERIALS SCIENCE, MULTIDISCIPLINARY | GROWTH-RATE | OPTICAL-PROPERTIES | MICROSCOPY | GAAS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Physica B: Physics of Condensed Matter, ISSN 0921-4526, 01/2013, Volume 408, pp. 98 - 103
We investigate theoretically the strain effects on resonant properties in asymmetric In Ga As vertically stacked coupled quantum dots. The strain can modify... 
Resonant parameters | Quantum dot molecule | Strain | PHYSICS, CONDENSED MATTER | 8-BAND | STATES | INAS/GAAS | ELECTRONIC-STRUCTURE | DEPENDENCE
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 05/2008, Volume 103, Issue 10, pp. 103718 - 103718-12
The development of the plane wave methodology for the calculation of the electronic structure of single quantum dots within the framework of multiband envelope... 
8-BAND | PHYSICS, APPLIED | LASERS | AMPLIFIERS | INFRARED PHOTODETECTORS | APPROXIMATIONS | HETEROSTRUCTURES | NANOCRYSTALS | OPTICAL-PROPERTIES | DEVICES | GAAS | Electrostatic interactions | Research | Gallium arsenide | Analysis | Quantum electrodynamics | Electric properties
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 04/2007, Volume 75, Issue 15
We investigate quantum confinement induced strain in quantum dots. While the impact of mechanical strain on the electronic structure of quantum dots is well... 
OPTICAL-PROPERTIES | PHYSICS, CONDENSED MATTER | 8-BAND | PHYSICS | NANOCRYSTALS | ELECTRONIC-STRUCTURE
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 11/2005, Volume 72, Issue 19
This paper presents a temperature-dependent scanning photoluminescence spectroscopic study of the ground and excited states on InAs quantum dots (QDs) inserted... 
PHYSICS, CONDENSED MATTER | 8-BAND | STRAIN DISTRIBUTION | OPTICAL-PROPERTIES | ABSORPTION | SEMICONDUCTOR MICROCRYSTALLITES | SPECTRA | ELECTRONIC-STRUCTURE | WELLS
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 01/2005, Volume 71, Issue 3
We report on a multiband microscopic theory of many-exciton complexes in self-assembled quantum dots. The single particle states are obtained by three methods:... 
PHYSICS, CONDENSED MATTER | 8-BAND | SUPERLATTICES | OPTICAL-PROPERTIES | ENERGY-LEVELS | ELECTRON-HOLE CORRELATION | MAGNETIC-FIELD | INAS/GAAS | ARTIFICIAL ATOMS | SPECTRA | STRAIN
Journal Article
PHYSICAL REVIEW B, ISSN 1098-0121, 08/2005, Volume 72, Issue 7
A method for the calculation of the electronic structure of pyramidal self-assembled InAs/GaAs quantum dots is presented. The method is based on exploiting the... 
HOLE | PHYSICS, CONDENSED MATTER | 8-BAND | STATES | SINGLE | STRAIN DISTRIBUTION | ISLANDS | MAGNETIC-FIELD | BAND | MODEL | GAAS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 09/2003, Volume 83, Issue 11, pp. 2247 - 2249
Marked enhancement of photoluminescence of InGaAs/GaAs quantum dots (QDs) was observed by the nanoindentation of the light-collecting fiber nanoprobe onto the... 
SURFACE | 8-BAND | PHYSICS, APPLIED | SPECTROSCOPY
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 2006, Volume 74, Issue 20
Cap layer impact on the electronic structures and optical properties of self-assembled InAs/GaAs quantum dots is theoretically studied within the framework of... 
PHYSICS, CONDENSED MATTER | 8-BAND | ENERGY | EFFECTIVE-MASS APPROXIMATION | DEFORMATION POTENTIALS | STRAIN DISTRIBUTION | DIAMOND | P THEORY | SEMICONDUCTORS | CRYSTALS | MODEL
Journal Article
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