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Journal Article
Journal of Cellular Biochemistry, ISSN 0730-2312, 01/2018, Volume 119, Issue 1, pp. 634 - 639
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 08/2019, Volume 520, pp. 68 - 71
•Ridge growth on 4″ and 5″ Si crystals was modeled.•Characteristic ridge formation due to {111} facet development was observed.•Azimuthal widths of the... 
A1. Heat transfer | A1. Computer simulation | A1. Facets | A1. Phase boundaries | A2. Floating zone technique | Crystal growth | Computer simulation | Crystals | Silicon | Growth models | Three dimensional models | Free surfaces
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 09/2017, Volume 474, pp. 16 - 23
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 01/2017, Volume 457, pp. 32 - 37
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 01/2009, Volume 311, Issue 3, pp. 711 - 715
Cuprous oxide (Cu O) crystals with polymorphology have been synthesized under EDTA-assisted hydrothermal conditions. It was found that the branching degree of... 
B1. Oxides | B2. Semiconducting materials | A1. Crystal morphology | A1. Surface structure | ROOM-TEMPERATURE | SHAPE | Oxides | Semiconducting materials | FABRICATION | CRYSTALLOGRAPHY | Crystal morphology | ARCHITECTURES | ARRAYS | Surface structure
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 09/2019, Volume 521, pp. 46 - 49
•The shape of the open melting front in FZ growth was calculated with a 3D model.•Inductor current supplies create a local shape asymmetry of 0.6 mm.•Numerical... 
A1. Heat transfer | A1. Computer simulation | A2. Floating zone technique | A2. Single crystal growth | B2. Semiconducting silicon | Models | Computer-generated environments | Computer simulation | Analysis | Crystal growth | Single crystals | Melting | Mathematical analysis | Crystals | Silicon | Mathematical models | Three dimensional models
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2011, Volume 325, Issue 1, pp. 101 - 103
The undercooling at the Si(1 1 1) facet is of great importance, e.g. in explaining effects during grain growth of multicrystalline Si. Data of experiments... 
A1. Growth models | SOLIDIFICATION | PHYSICS, APPLIED | CRYSTALLOGRAPHY | MELT | Growth models | MATERIALS SCIENCE, MULTIDISCIPLINARY | Crystal growth | Monte Carlo methods | Computer simulation | Spreads | Supercooling | Undercooling | Mathematical models | Silicon
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 01/2017, Volume 457, pp. 98 - 103
We develop a modified solid-on-solid model for studying heteroepitaxial growth of Ge on a 2×1 reconstructed Si(001) surface. The model is implemented using... 
A1. Computer Simulation | A3. Molecular beam epitaxy | A1. Surface Processes | B1. Germanium silicon alloys | A1. Roughening | A1. Stresses
Journal Article