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crystallography (1014) 1014
materials science, multidisciplinary (731) 731
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directional solidification (482) 482
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Journal of Crystal Growth, ISSN 0022-0248, 06/2016, Volume 444, pp. 1 - 8
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 11/2016, Volume 454, pp. 96 - 104
For the first time, isothermal equiaxed solidification of a metallic alloy has been observed in situ in space, providing unique benchmark experimental data... 
A2. Microgravity conditions | B1. Alloys | A1. Dendrites, Solidification | METALLIC ALLOYS | TRANSITION | Dendrites, Solidification | DENDRITIC GROWTH | XRMON-GF | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | Alloys | RAY RADIOGRAPHIC OBSERVATIONS | Microgravity conditions | CRYSTALLOGRAPHY | IN-SITU
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 06/2017, Volume 468, pp. 73 - 78
In order to elucidate the cause of the morphological transition of crystals growing in an undercooled melt of semiconducting materials, we carried out the containerless solidification of undoped Si and Si-1... 
Nucleation | A1. Dendrites | Growth mode | A2. Growth from melt | B2. Semiconducting silicon | Solidification | PHYSICS, APPLIED | MECHANISM | MATERIALS SCIENCE, MULTIDISCIPLINARY | CRYSTALLOGRAPHY | MICROSTRUCTURES | LEVITATION | GERMANIUM | ALLOYS | CRYSTAL-GROWTH | Dendrites | Semiconducting silicon | Growth from melt
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 03/2014, Volume 389, pp. 47 - 54
Journal Article
Journal of crystal growth, ISSN 0022-0248, 2013, Volume 377, pp. 192 - 196
Solidification refining of Si using Si–Sn solvent was investigated with the aim of developing a new Si refining process to produce solar grade silicon (SOG-Si... 
A1. Segregation | A1. Directional solidification | A1. Impurities | B3. Solar cells | A1. Purification | B2. Semiconducting silicon | Solar cells | PHYSICS, APPLIED | Purification | BORON | Directional solidification | Segregation | MATERIALS SCIENCE, MULTIDISCIPLINARY | CRYSTALLOGRAPHY | SOLVENT | DENSITY | REMOVAL | GERMANIUM | Impurities | TIN | AL MELT | Semiconducting silicon | MOLTEN SILICON | Alloys
Journal Article
Journal of crystal growth, ISSN 0022-0248, 2016, Volume 439, pp. 40 - 46
The evolution of grain structures, especially the types of grain boundaries (GBs), during directional solidification is crucial to the electrical properties of multicrystalline silicon used for solar cells... 
A1. Solidification | A1. Nucleation | A1. Planar defects | B2. Semiconducting silicon | PHYSICS, APPLIED | Nucleation | SOLAR-CELLS | MELT | ZONE | MATERIALS SCIENCE, MULTIDISCIPLINARY | POLYCRYSTALLINE SILICON | ORIENTATIONS | CRYSTALLOGRAPHY | Planar defects | MULTI-CRYSTALLINE SILICON | Solidification | GROWTH | STRING RIBBON | Semiconducting silicon | Grain boundaries | Silicon | Semiconductor wafers | Directional solidification | Grains | Wafers | Evolution | Drift | Orientation | Grain structure
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 04/2016, Volume 440, pp. 38 - 46
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 02/2019, Volume 508, pp. 42 - 49
....•Preferred twinning sites in the previous experiments are predicted. Heterogeneous twinning nucleation from the wall or gas interface during directional solidification... 
A1. Heterogeneous | B2. Silicon | A1. Facets | A1. Nucleation | A1. Twinning | A1. Undercooling | GRAIN-BOUNDARIES | PHYSICS, APPLIED | Nucleation | Facets | MECHANISM | MATERIALS SCIENCE, MULTIDISCIPLINARY | Twinning | CRYSTALLOGRAPHY | FACET | Heterogeneous | EVOLUTION | GROWTH | Undercooling | Silicon | X ray imagery | Directional solidification | Material chemistry | Chemical Sciences
Journal Article
Journal of crystal growth, ISSN 0022-0248, 2015, Volume 417, pp. 1 - 8
Journal Article
Journal of crystal growth, ISSN 0022-0248, 2018, Volume 492, pp. 18 - 23
Journal Article