X
Search Filters
Format Format
Subjects Subjects
Subjects Subjects
X
Sort by Item Count (A-Z)
Filter by Count
crystallography (19) 19
materials science, multidisciplinary (13) 13
physics, applied (13) 13
a1. characterization (9) 9
defects (9) 9
a1. defects (7) 7
b2. semiconducting ii-vi materials (7) 7
characterization (7) 7
crystals (7) 7
growth (7) 7
dislocations (6) 6
semiconducting ii-vi materials (6) 6
cdte (5) 5
kleinwinkelkorngrenze (5) 5
performance (5) 5
topographie (5) 5
b2. cdtese (4) 4
b2. semiconducting ii–vi materials (4) 4
cdznte (4) 4
crystal growth (4) 4
kristallfehler (4) 4
a1. etching (3) 3
a1. extended defects (3) 3
a1. sub-grain boundary network (3) 3
a1. te-inclusions (3) 3
a2. thm (3) 3
cdte crystals (3) 3
cdtese (3) 3
cdznte detectors (3) 3
chemisches ätzen (3) 3
crystal (3) 3
czt (3) 3
etching (3) 3
extended defects (3) 3
grain boundaries (3) 3
inclusions (3) 3
particle accelerators (3) 3
sub-grain boundary network (3) 3
synchrotron (3) 3
te inclusions (3) 3
thm (3) 3
zwei-sechs-verbindung (3) 3
a1. dislocations (2) 2
a1. line defects (2) 2
a1. rocking curve (2) 2
a1. stresses (2) 2
a2. bridgman (2) 2
a2. crystal growth (2) 2
analysis (2) 2
b1. gan thin films (2) 2
b2. cdznte (2) 2
boundaries (2) 2
bridgman (2) 2
bridgman method (2) 2
cadmium (2) 2
cadmium zinc telluride (2) 2
cadmium zinc tellurides (2) 2
cadmiumtellurid (2) 2
cdmnte (2) 2
condensed matter physics (2) 2
detector applications (2) 2
detectors (2) 2
fehler (2) 2
gan thin films (2) 2
gerichtete erstarrung (2) 2
homogenität (2) 2
infrarotmikroskopie (2) 2
ingots (2) 2
inorganic chemistry (2) 2
kristalldefekt (2) 2
layers (2) 2
liquors (2) 2
materials chemistry (2) 2
materials science (2) 2
melts (2) 2
mosaic structure (2) 2
precipitation (2) 2
radiation (2) 2
ray (2) 2
rocking curve (2) 2
röntgenbeugung (2) 2
röntgendiffraktion (2) 2
röntgenstrahl (2) 2
segregation (2) 2
silicon (2) 2
solar-cells (2) 2
solarzelle (2) 2
strahlungsdetektor (2) 2
stresses (2) 2
te-inclusions (2) 2
versetzungsdichte (2) 2
x-strahl (2) 2
ätzen (2) 2
[ sdu.stu ] sciences of the universe [physics]/earth sciences (1) 1
[ sdu.stu.mi ] sciences of the universe [physics]/earth sciences/mineralogy (1) 1
[sdu.stu.mi]sciences of the universe [physics]/earth sciences/mineralogy (1) 1
[sdu.stu]sciences of the universe [physics]/earth sciences (1) 1
a1. crystal structure (1) 1
a1. directional solidification (1) 1
a1. extended defect (1) 1
more...
Language Language
Publication Date Publication Date
Click on a bar to filter by decade
Slide to change publication date range


Journal of Crystal Growth, ISSN 0022-0248, 03/2014, Volume 389, pp. 99 - 102
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 02/2015, Volume 411, pp. 34 - 37
We grew CdTe Se crystals with nominal Se concentrations of 5%, 7%, and 10% by the vertical Bridgman technique, and evaluated their compositional homogeneity... 
A1.Subgrain boundary | B2. CdTeSe | B2. Semiconducting II-VI materials | A1. Characterization | A1. Te-inclusions | A1. Defects | Te-inclusions | PHYSICS, APPLIED | PERFORMANCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | CRYSTAL | CRYSTALLOGRAPHY | SEGREGATION | CDTE | Defects | Characterization | Semiconducting II-VI materials | CdTeSe | Subgrain boundary
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 02/2015, Volume 411, Issue C
We grew CdTexSe1-x crystals with nominal Se concentrations of 5%, 7%, and 10% by the vertical Bridgman technique, and evaluated their compositional homogeneity... 
A1. characterization | B2. CdTeSe | A1. Subgrain boundary | A1. Te-inclusions | A1. defects | B2. Semiconducting II-VI materials | PARTICLE ACCELERATORS
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 05/2018, Volume 489, pp. 42 - 50
Besides the well-known local sub-grain boundaries (SGBs) defects, monolike Si ingots grown by Directional Solidification present distributed background... 
A1. Dislocations | Synchrotron X-ray imaging | A2. Melt growth | B2. Monolike photovoltaic silicon | Four-point bending | TESTS | DEFECTS | PHYSICS, APPLIED | SOLAR-CELLS | MATERIALS SCIENCE, MULTIDISCIPLINARY | Melt growth | CRYSTALLOGRAPHY | Dislocations | Monolike photovoltaic silicon | GAAS CRYSTALS | GROWTH | CREEP | DYNAMICS | PLASTIC-DEFORMATION
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 04/2017, Volume 463, pp. 1 - 9
Dislocation clusters are the main crystal defects in multicrystalline silicon and are detrimental for solar cell efficiency. They were formed during the... 
A1. Directional solidification | A1. Characterization | B1. Elemental solids | A2. Growth from melt | A1. Line defects | RECOMBINATION | DEFECTS | PHYSICS, APPLIED | SOLAR-CELLS | MATERIALS SCIENCE, MULTIDISCIPLINARY | CRYSTAL | CRYSTALLOGRAPHY | INGOT | BOUNDARIES | GENERATION | Silicon | Investigations
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 07/2017, Volume 470, pp. 99 - 103
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 09/2013, Volume 379, pp. 46 - 56
Material homogeneity is critical in achieving high-performance in all types of radiation detectors. This requirement is not inevitably satisfied in today's... 
B2. Semiconducting materials | A1. Volume defects | A1. Radiation | A1. Defects | PHYSICS, APPLIED | Volume defects | PERFORMANCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | Radiation | GROWTH | Semiconducting materials | CRYSTALLOGRAPHY | CDZNTE | CHARGE | Defects | TE INCLUSIONS | CZT
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2008, Volume 310, Issue 21, pp. 4493 - 4498
We demonstrated the distribution of defects in cadmium zinc telluride (CZT) detectors by revealing etch pits on the surfaces with a chemical-etching method and... 
A1. Etching | B2. Semiconducting II–VI materials | A1. Line defects | B3. Infrared devices | B2. Semiconducting II-VI materials | DISLOCATIONS | Semiconducting II-VI materials | Line defects | DETECTOR APPLICATIONS | CDZNTE CRYSTALS | GROWTH | Etching | CRYSTALLOGRAPHY | Infrared devices | SEMICONDUCTOR COMPOUND-CRYSTALS | CDTE CRYSTALS | Cadmium | Zinc
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2001, Volume 231, Issue 1, pp. 295 - 305
Microstructure transition from the coarse-grained dendrites to the grain-refined equiaxed microstructures is observed in DD3 superalloy melt with an... 
A1. Solidification | B1. Alloys | A1. Stresses | A1. Defects | A1. Recrystallization | DENDRITES | alloys | recrystallization | FLUID-FLOW | stresses | solidification | defects | GROWTH | CRYSTALLOGRAPHY | MODEL | SINGLE-CRYSTAL SUPERALLOY | MELTS
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 01/2014, Volume 386, pp. 43 - 46
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 01/2017, Volume 458, pp. 120 - 128
The loss of the dislocation-free growth (structure loss) during Czochralski (Cz) silicon pulling can have a strong negative impact on the production yield of... 
A1. Dislocations | A2. Czochralski method | B3. Solar cells | B2. Semiconducting silicon | Solar cells | WAFERS | INGOTS | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | CRYSTALS | SURFACE | Czochralski method | Semiconducting silicon | CRYSTALLOGRAPHY | Dislocations | Analysis | Silicon
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 09/2013, Volume 379, pp. 57 - 62
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2005, Volume 281, Issue 1, pp. 135 - 142
In this communication crystallographic and chemical inhomogeneities occurring in GaN single crystals, homo-epitaxial layers and quasi-bulk thick epitaxial... 
A1. Etching | A1. Characterization | B1. Nitrides | A1. Crystal structure | A1. Defects | TRANSMISSION ELECTRON-MICROSCOPY | DISLOCATIONS | CHEMICAL-VAPOR-DEPOSITION | etching | crystal structured defects | GROWTH | CATHODOLUMINESCENCE | CRYSTALLOGRAPHY | nitrides | characterization | BULK | LAYERS | Liquors | Structure | Epitaxy | Crystals
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2006, Volume 294, Issue 2, pp. 156 - 161
Effect of long anneals on densities of different types of threading dislocations (TDs) in GaN films grown onto sapphire substrate by metal-organic chemical... 
A1. Threading dislocation | B1. GaN thin films | A1. Rocking curve | A1. Stresses | rocking curve | THIN-FILMS | SAPPHIRE | GaN thin films | stresses | threading dislocation | MOSAIC STRUCTURE | CARRIER MOBILITY | CRYSTALLOGRAPHY | Thin films | Corundum | Particle accelerators | Radiation | Liquors | Dielectric films | Chemical vapor deposition | Dislocations
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2004, Volume 268, Issue 3, pp. 484 - 488
High-resolution X-ray diffraction was used to analyze the type of dislocations in GaN epitaxial thin films. Rocking curves of five planes were investigated, (0... 
B1. GaN thin films | A1. Rocking curve | A1. Mobility | rocking curve | VAPOR-PHASE EPITAXY | mobility | GaN thin films | THREADING DISLOCATIONS | MOSAIC STRUCTURE | CRYSTALLOGRAPHY | SCATTERING | LAYERS
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2003, Volume 256, Issue 3, pp. 347 - 351
Homoepitaxial growth on 6H-SiC (0 0 0 1)-vicinal faces by horizontal cold-wall chemical vapor deposition operating at 1500°C has been re-investigated. It was... 
B2. Semiconducting silicon compounds | A3. Chemical vapor deposition processes | A1. Surface structure | FILMS | TILT-ANGLE | GROWTH | chemical vapor deposition processes | semiconducting silicon compounds | CRYSTALLOGRAPHY | surface structure
Journal Article
No results were found for your search.

Cannot display more than 1000 results, please narrow the terms of your search.