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Journal of Crystal Growth, ISSN 0022-0248, 06/2017, Volume 468, pp. 272 - 274
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 06/2017, Volume 468, pp. 477 - 483
In this study, X-ray diffraction and X-ray topography, using synchrotron radiation source, were used to analyse the nature of defects in a sapphire single... 
B1. Sapphire | B3. Solid state lasers | A2. Kyropoulos method | A1. Stresses | A1. X-ray topography | A1. Line defects | Stresses | PHYSICS, APPLIED | LASERS | Line defects | Sapphire | Solid state lasers | MATERIALS SCIENCE, MULTIDISCIPLINARY | CRYSTALLOGRAPHY | Kyropoulos method | X-ray topography | Diffraction | X-rays | Engineering Sciences | Materials
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 12/2015, Volume 432, pp. 24 - 32
Journal Article
Thin Solid Films, ISSN 0040-6090, 03/2016, Volume 603, pp. 435 - 440
Large-area back-reflection and transmission X-ray diffraction topographs of bonded silicon-on-insulator (SOI) wafers made with synchrotron radiation allowed... 
A1. Interfaces | A1. X-ray diffraction | A1. X-ray topography | B2. Semiconducting silicon | Interfaces | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | X-ray diffraction | Semiconducting silicon | X-ray topography | MATERIALS SCIENCE, COATINGS & FILMS | Silicon | Diffraction | X-rays
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 06/2017, Volume 468, pp. 135 - 138
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 05/2014, Volume 393, pp. 108 - 113
We observed the growth of the Ga In N (2 nm)/GaN (3 nm) superlattice (SL) structure by X-ray diffraction (XRD) monitoring. The satellite peaks from the −1st to... 
B3. Heterojunction semiconductor devices | A3. Organometallic vapor phase epitaxy | B1. Nitrides | A1. X-ray diffraction | Diffraction | Epitaxy | Analysis | X-rays | Satellites | Gallium nitrides | Segregations | Superlattices | X-ray diffraction | Monitoring
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 12/2017, Volume 479, pp. 46 - 51
The oxygen (O) precipitate growth kinetics from moderate and high germanium (Ge) doped Czochralski-growth silicon (Cz-Si) are investigated at utilizing... 
A1. Doping | A1. Impurity | A2. Czochralski method | A1. X-ray diffraction | A1. Defects | B2. Semiconducting silicon | PHYSICS, APPLIED | Impurity | MATERIALS SCIENCE, MULTIDISCIPLINARY | Doping | X-ray diffraction | CZOCHRALSKI-GROWN SILICON | NITROGEN | CRYSTALS | Czochralski method | Semiconducting silicon | CRYSTALLOGRAPHY | Defects | Annealing | Silicon | Diffraction | X-rays
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 09/2014, Volume 401, pp. 372 - 375
Synchrotron X-ray diffraction has been applied to the in situ monitoring of the molecular beam epitaxial growth of self-assembled InAs/GaAs(001) quantum dots... 
A3. Molecular beam epitaxy | A1. X-ray diffraction | B2. Semiconducting III-V materials | Semiconducting III-V materials | PHYSICS, APPLIED | MOLECULAR-BEAM-EPITAXY | MATERIALS SCIENCE, MULTIDISCIPLINARY | SIZE | X-ray diffraction | CRYSTALLOGRAPHY | GAAS | MBE | Molecular beam epitaxy | OSCILLATIONS | STRAIN | SCATTERING | SURFACES | Atomic force microscopy | Diffraction | Epitaxy | X-rays
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 02/2015, Volume 412, pp. 60 - 66
A new approach to estimate bowing in hetero-epitaxial films-on-single crystalline substrate at elevated temperatures using X-ray diffraction (XRD) rocking... 
A1. Curvature | B1. GaN | XRD rocking curve | Substrate bow | PHYSICS, APPLIED | GaN | MATERIALS SCIENCE, MULTIDISCIPLINARY | GROWTH | CRYSTALS | CRYSTALLOGRAPHY | Curvature | Measurement | Liquors | Diffraction | Epitaxy | X-rays | Crystal growth | X-ray diffraction | Epitaxial growth | Bowing | High temperature | Slits | Crystal structure
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 09/2012, Volume 354, Issue 1, pp. 20 - 26
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 10/2013, Volume 381, pp. 1 - 5
InAs/InAs Sb type-II superlattices (SLs) have been grown on GaSb (100) substrates using molecular beam epitaxy with different Sb/In and As/In flux ratios and... 
A3. Superlattices | A3. Molecular beam epitaxy | A1. Characterization | A1. Crystal structure | Characterization | PHYSICS, APPLIED | Superlattices | MATERIALS SCIENCE, MULTIDISCIPLINARY | Molecular beam epitaxy | CRYSTALLOGRAPHY | Crystal structure | Diffraction | Electron microscopy | Epitaxy | X-rays | Antimony
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 03/2013, Volume 366, pp. 39 - 42
Residual stresses in ultrathin La Sr MnO (LSMO) films with various thicknesses of 8–40 nm were measured quantitatively via synchrotron radiation X-ray... 
A1. Nanofilm | B1. Perovskite oxide | A1. Synchrotron radiation X-ray diffraction | A1. Residual stress
Journal Article