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a2. bridgman technique (545) 545
crystallography (503) 503
bridgman technique (399) 399
materials science, multidisciplinary (295) 295
physics, applied (292) 292
a2. growth from melt (117) 117
a2. single crystal growth (104) 104
crystal growth (101) 101
growth (100) 100
a1. directional solidification (95) 95
growth from melt (92) 92
a1. characterization (91) 91
crystals (84) 84
segregation (84) 84
directional solidification (82) 82
a1. segregation (80) 80
a1. computer simulation (79) 79
single crystal growth (78) 78
semiconducting ii-vi materials (76) 76
computer simulation (74) 74
analysis (73) 73
a1. defects (72) 72
bridgman method (71) 71
defects (68) 68
kristallwachstum aus der schmelze (68) 68
characterization (66) 66
b2. semiconducting ii–vi materials (65) 65
convection (63) 63
kristallwachstum (63) 63
b2. semiconducting ii-vi materials (61) 61
monokristall (58) 58
b1. halides (56) 56
single-crystals (56) 56
b2. scintillator materials (54) 54
cdte (49) 49
alloys (48) 48
crystal-growth (48) 48
a1. convection (47) 47
b2. nonlinear optic materials (45) 45
a1. doping (44) 44
a1. heat transfer (42) 42
solidification (42) 42
scintillator materials (39) 39
b1. cadmium compounds (38) 38
cadmium compounds (38) 38
halbleiterwachstum (37) 37
halides (37) 37
doping (36) 36
heat transfer (36) 36
melt (36) 36
a1. x-ray diffraction (35) 35
detectors (34) 34
bridgman growth (33) 33
methods (33) 33
x-ray diffraction (32) 32
a1. crystal structure (30) 30
a1. impurities (29) 29
melts (29) 29
nonlinear optic materials (29) 29
single crystals (29) 29
gerichtete erstarrung (28) 28
impurities (28) 28
microgravity (28) 28
b1. alloys (27) 27
b2. piezoelectric materials (26) 26
cadmium zinc telluride (26) 26
crystal structure (26) 26
zwei-sechs-verbindung (26) 26
b2. semiconducting ternary compounds (25) 25
cadmium (25) 25
silicon (25) 25
system (25) 25
cadmiumverbindung (24) 24
cdznte (24) 24
b1. oxides (23) 23
oxides (23) 23
a1. interfaces (22) 22
b1. perovskites (22) 22
b2. semiconducting iii–v materials (22) 22
photoluminescence (22) 22
röntgenbeugung (22) 22
b2. semiconducting iii-v materials (21) 21
kristallstruktur (21) 21
photolumineszenz (21) 21
semiconducting iii-v materials (21) 21
szintillator (21) 21
interfaces (20) 20
semiconducting ternary compounds (20) 20
a2. gradient freeze technique (19) 19
chemical properties (19) 19
germanium (19) 19
gradient freeze technique (19) 19
halogenid (19) 19
interface (19) 19
seigerung (19) 19
a1. eutectics (18) 18
b1. rare earth compounds (18) 18
b2. nonlinear optical materials (18) 18
erstarren (18) 18
magnetic fields (18) 18
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Journal of Crystal Growth, ISSN 0022-0248, 08/2016, Volume 447, pp. 36 - 41
A new approach to β-Ga2O3 single crystal growth was studied, using the vertical Bridgman (VB) method in ambient air, while measuring the β-Ga2O3 melting... 
A2. Bridgman technique | B1. Oxides | B2. Semiconducting gallium compounds | A2. Growth from melt | A2. Single crystal growth | SYSTEM | Bridgman technique | PHYSICS, APPLIED | CONDUCTIVITY | Semiconducting gallium compounds | MATERIALS SCIENCE, MULTIDISCIPLINARY | Single crystal growth | Oxides | CRYSTALLOGRAPHY | Growth from melt | EDGE | POWER DEVICES
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 06/2014, Volume 395, pp. 80 - 89
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 03/2020, Volume 534, Issue C, p. 125466
•High pressure Bridgman technique is suitable to synthesize CdTe from elemental sources.•Highly volatile dopants can be efficiently incorporated into melt... 
B1. Cadmium compounds | A2. Growth from melt | A2. Single crystal growth | A1. Doping | B2. Semiconducting materials | B3. Solar cells | A1. Solubility | Solar cells | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | Doping | Solubility | Single crystal growth | Semiconducting materials | CRYSTALLOGRAPHY | Growth from melt | IMPURITIES | EFFICIENCY | Cadmium compounds
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 08/2016, Volume 448, pp. 1 - 5
We investigated the influence of growth rate and Ce concentration on colony structure variation in Al2O3/YAG:Ce eutectic systems. The distance between boundary... 
B1.Sapphire | B1.Yttrium compounds | A1.Eutectics | B1.Oxides | A1.Directional solidification | A2.Bridgman technique | Bridgman technique | PHYSICS, APPLIED | Directional solidification | Sapphire | Yttrium compounds | Eutectics | MATERIALS SCIENCE, MULTIDISCIPLINARY | Oxides | CRYSTALLOGRAPHY
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 09/2013, Volume 379, pp. 69 - 72
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 03/2018, Volume 485, pp. 73 - 77
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2013, Volume 379, pp. 69 - 72
Large diameter Bridgman growth of europium activated strontium iodide SrI :Eu produces crystals with light yield of up to 115,000 ph/MeV with an excellent... 
A2. Bridgman technique | B2. Scintillator material | A2. Growth from melt | A2. Single crystal growth | B2. Large diameter scintillator crystals
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 10/2016, Volume 452, pp. 105 - 110
Growth and quality of single crystals are unusually sensitive to the thermal distribution. In the appropriate thermal field ferroelectric single crystal... 
A2. Bridgman technique | B2. Dielectric, Piezoelectric, Ferroelectric materials | A1. Charaterization | A1. Homogeneity | B1. Perovskite | A2. Single crystal growth
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 06/2017, Volume 468, pp. 331 - 334
Relaxor based ferroelectric single crystals Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) with composition near morphotropic phase boundary exhibit... 
A2. Bridgman technique | B1. Perovskites | A1. Segregation | A1. High uniformity | A2. Single crystal growth | B2. Piezoelectric materials | High uniformity | Bridgman technique | PHYSICS, APPLIED | Piezoelectric materials | Segregation | MATERIALS SCIENCE, MULTIDISCIPLINARY | Single crystal growth | Perovskites | CRYSTALLOGRAPHY | Structure | Analysis | Methods | Crystals
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 12/2017, Volume 480, pp. 96 - 101
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 02/2020, Volume 531, p. 125364
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 11/2019, Volume 526, p. 125221
•Bell-shaped baffle was used for the first time in vertical Bridgman configuration.•With or without rotation, the bell-shaped baffle yields convex... 
A2. Bridgman technique | B1. Cadmium compounds | B1. Sapphire | A1. Stirring | A1. Computer simulation | Bridgman technique | PHYSICS, APPLIED | Computer simulation | Sapphire | CRYSTAL-GROWTH | CONVECTION | MATERIALS SCIENCE, MULTIDISCIPLINARY | Stirring | CONFIGURATION | CRYSTALLOGRAPHY | Cadmium compounds
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 02/2020, Volume 531, p. 125340
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 07/2017, Volume 470, pp. 20 - 26
•KCaI3:Eu crystals were grown using the multi-ampoule Bridgman method.•Scintillator performance was compared from different sections of the boule.•25mm×25mm... 
A2. Bridgman technique | B1. Halides | A2. Multiple-ampoule | B2. Scintillator materials | HIGH-PERFORMANCE | Bridgman technique | PHYSICS, APPLIED | Scintillator materials | MATERIALS SCIENCE, MULTIDISCIPLINARY | ENERGY RESOLUTION | DETECTOR | STOCKBARGER TECHNIQUE | STRONTIUM IODIDE | KCA0.8SR0.2I3EU2 | CRYSTALLOGRAPHY | Multiple-ampoule | CEBR3 | SINGLE-CRYSTALS | CADMIUM | Halides | INTERFACE SHAPE
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2010, Volume 312, Issue 21, pp. 3136 - 3142
LuAG:Ce single crystals with various activator concentrations were grown by the vertical Bridgman technique. Characterization of crystals was done in terms of... 
A2. Bridgman technique | B1. Rare-earth compounds | B2. Scintillator materials | A1. Defects | Bridgman technique | SINGLE-CRYSTALS | Scintillator materials | MELT GROWTH | Rare-earth compounds | REGIONS | CRYSTALLOGRAPHY | OXIDES | GARNET CRYSTALS | Defects | FACET | Crystal growth | Occupation | Crystal defects | Crystal lattices | Aluminum | Crystals | Lattice sites | Bridgman method
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 04/2015, Volume 416, pp. 100 - 105
The vertical Bridgman (VB) method was investigated as a way to grow Al2O3/YAG:Ce melt growth composite (Ce-doped MGC), an attractive candidate material for... 
A2. Bridgman technique | Emitting diodes | A1. Eutectics | B3. Light | B1. Oxides | A1. Directional solidification | THERMAL-STABILITY | Bridgman technique | PHYSICS, APPLIED | Directional solidification | Eutectics | Light | HIGH-TEMPERATURE STRENGTH | MATERIALS SCIENCE, MULTIDISCIPLINARY | Oxides | CRYSTALLOGRAPHY | EUTECTIC COMPOSITE
Journal Article
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