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islands (38) 38
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movpe (37) 37
optical properties (37) 37
strain (36) 36
temperature (36) 36
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Journal of Crystal Growth, ISSN 0022-0248, 01/2020, Volume 529, p. 125299
Journal Article
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 06/2016, Volume 443, pp. 25 - 30
Growth of gallium oxide thin films was carried out by Metalorganic Chemical Vapor Deposition (MOCVD) at different temperatures. Pure ε-phase epilayers of... 
A3. Atomic layer epitaxy | A3. Metalorganic Chemical Vapor Deposition | B1. Oxides | A1. Phase stability | B2. Semiconducting gallium compounds
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 11/2017, Volume 477, pp. 164 - 168
•MBE- and ALD-Y2O3 effectively passivate GaSb(001) with a Dit of low 1012cm−2eV−1.•Stoichiometric Sb2O5, Sb2O4 in MBE-Y2O3/GaSb, but Sb2Ox (x<4) in... 
A3. Atomic layer deposition | B1. Antimonides | B2. Sb-based semiconductors | A3. Molecular beam epitaxy | PHYSICS, APPLIED | OXIDE | PASSIVATION | MATERIALS SCIENCE, MULTIDISCIPLINARY | CRYSTALLOGRAPHY | GAAS | Atomic layer deposition | Y2O3 | DIELECTRICS | Molecular beam epitaxy | DEVICES | Sb-based semiconductors | Antimonides
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 03/2013, Volume 367, pp. 115 - 121
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 06/2009, Volume 311, Issue 12, pp. 3278 - 3284
AlN is generally used as buffer layer for the epitaxial growth of GaN on Si(111) substrate. In this work, we specifically address the relationship between the... 
A1. RHEED | A3. MBE | B1. Nitrides | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | MOLECULAR-BEAM EPITAXY | ELECTRON-MOBILITY TRANSISTORS | CRYSTALLOGRAPHY | RHEED | LIGHT-EMITTING-DIODES | MBE | Nitrides | PHASE | ALGAN/GAN HEMTS | SUBSTRATE | SURFACE | MORPHOLOGY | OUTPUT POWER-DENSITY | Atomic force microscopy | Usage | Growth | Epitaxy | Aluminum compounds | Liquors
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 03/2005, Volume 276, Issue 1-2, pp. 102 - 110
A combined X-ray diffraction (XRD) and Transmission Electron Microscopy (TEM) study have been carried out on copper films grown by atomic layer deposition at... 
B1. Copper | B1. Sapphire | A3. Atomic layer epitaxy | A1. Epitaxial | CU | atomic layer epitaxy | FILMS | METALS | epitaxial | TANTALUM | GROWTH | copper | CRYSTALLOGRAPHY | NI | PRECURSORS | sapphire
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 08/2011, Volume 329, Issue 1, pp. 67 - 70
The potential for enhancement of Si-based devices by growth of SiC films on large-diameter Si wafers is hampered by the very high temperatures (close to the Si... 
B1. Silicon carbide | B2. Semiconducting materials | A1. X-ray diffraction | A3. Chemical vapor deposition processes | A1. Crystal morphology
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 04/2018, Volume 487, pp. 23 - 27
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 12/2016, Volume 455, pp. 157 - 160
Journal Article
Journal Article