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Journal of Crystal Growth, ISSN 0022-0248, 01/2016, Volume 433, pp. 114 - 121
We studied the metalorganic vapor phase epitaxy (MOVPE) of (Bi1−xSbx)2Se3 solid solution films with a different Sb content on (001) Al2O3 substrates with thin... 
A1 Atomic force microscopy | A3 Metalorganic vapor phase epitaxy | A1 X-ray diffraction | B2 Topological insulators | B1 Bismuth compounds | A1 Solid solutions
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 09/2018, Volume 498, pp. 130 - 136
•We investigated solid phase epitaxy (SPE) of amorphous alumina on sapphire.•The SPE proceeds through two-steps (amorphous → γ-phase → α-phase).•The activation... 
B1. Sapphire | A1. Nanostructures | A3. Solid phase epitaxy | A1. Recrystallization | THIN-FILMS | PHYSICS, APPLIED | OXIDE | DEPOSITION | STABILITY | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON | CRYSTALLOGRAPHY | Nanostructures | ION-IMPLANTED AL2O3 | Solid phase epitaxy | Sapphire | TO-GAMMA | KINETICS | Recrystallization | GROWTH | TRANSFORMATIONS
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 04/2015, Volume 416, pp. 34 - 40
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2008, Volume 310, Issue 17, pp. 4016 - 4019
High-temperature growth of thick AlN layers was performed by solid source halide vapor-phase epitaxy (HVPE) with local heating system. It was found that... 
B1. Nitrides | A3. Vapor-phase epitaxy | B2. Semiconducting aluminum compounds | STARTING SUBSTRATE | HVPE | PHYSICS, APPLIED | GAN | MATERIALS SCIENCE, MULTIDISCIPLINARY | DECOMPOSITION | CRYSTALLOGRAPHY | nitrides | DIODES | vapor-phase epitaxy | semiconducting aluminum compounds | Aluminum compounds | Nitrides | Mass spectrometry | Epitaxy
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2011, Volume 331, Issue 1, pp. 40 - 43
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 02/2013, Volume 364, pp. 164 - 168
Multicrystalline silicon films up to 2μm thick with grain sizes up to 100μm were prepared on glass substrates by laser crystallization followed by solid phase... 
B3. Solar cells | A3. Solid phase epitaxy | A1. Recrystallization | B2. Semiconducting silicon | Solar cells | GLASS | PHYSICS, APPLIED | SOLAR-CELLS | Solid phase epitaxy | AMORPHOUS-SILICON | MATERIALS SCIENCE, MULTIDISCIPLINARY | Recrystallization | GROWTH | SEED LAYERS | Semiconducting silicon | CRYSTALLOGRAPHY | Solar energy industry | Epitaxy | Silicon
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 09/2013, Volume 378, pp. 243 - 245
We investigated solid phase epitaxy (SPE) of EuTiO3 thin films on SrTiO3 (100) substrates with different oxygen contents. Amorphous EuTiOx thin films were... 
B2. Dielectric materials | B1. Oxides | B1. Titanium compounds | A3. Solid phase epitaxy | Oxides | Solid phase epitaxy | Titanium compounds | Dielectric materials | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | GROWTH | CRYSTALLOGRAPHY | Crystal growth
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 11/2018, Volume 502, pp. 41 - 44
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2011, Volume 331, Issue 1, pp. 25 - 28
Heteroeptaxial growth of semipolar GaN on ( 1 0 1 ¯ 0 ) sapphire by metal-organic vapor phase epitaxy has been investigated using high temperature nucleation... 
B1. Sapphire | B1. Nitrides | B2. Semiconducting gallium compounds | A2. Single crystal growth | A2. Growth form vapor | A3. Metal-organic vapor phase epitaxy | Atomic force microscopy | Epitaxy | Liquors | Crystal defects | Stacking faults | Vapor phase epitaxy | Nucleation | Gallium nitrides | Sapphire | Images | Roughness
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 05/2011, Volume 323, Issue 1, pp. 363 - 367
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 02/2016, Volume 435, pp. 12 - 18
The effect of V/III ratio on the growth and properties of AlGaN layers grown on (112¯2) AlN templates grown on (101¯0) sapphire by metalorganic vapour phase... 
B2. AlGaN | B1. Nitrides | B2. Semiconducting aluminum compounds | A3. Metalorganic vapour phase epitaxy | Aluminum compounds | Epitaxy | Thickness | Aluminum | Cations | Aluminum gallium nitrides | Vapour | Position (location) | Aluminum nitride
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 12/2016, Volume 456, pp. 155 - 159
Journal Article
Journal Article