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OPTICS EXPRESS, ISSN 1094-4087, 02/2019, Volume 27, Issue 4, pp. 4238 - 4260
Integrated microresonator-based mid-infrared frequency combs based on HI-V semiconductors exhibit pronounced higher-order group velocity dispersion that can... 
ALGAAS | GENERATION | OPTICS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2018, Volume 112, Issue 15, p. 153507
We investigate the impact of threading dislocation density on the reliability of 1.3 μm InAs quantum dot lasers epitaxially grown on Si. A reduction in the... 
RECOMBINATION | PHYSICS, APPLIED | GROWTH | DIODE-LASERS | GAAS/ALGAAS LASERS | ALGAAS | GAAS
Journal Article
Optics Letters, ISSN 0146-9592, 09/2008, Volume 33, Issue 18, pp. 2026 - 2028
Semiconductor-based whispering-gallery-mode microcavities are very promising for nonlinear optics applications, thanks to the high optical quality factors... 
ALGAAS MICRORING RESONATORS | OPTICS
Journal Article
Optics Express, ISSN 1094-4087, 07/2017, Volume 25, Issue 15, pp. 18474 - 18484
Generating polarization-entangled photon pairs on chip is generally complicated by the birefringence of waveguides. In this work, we propose a technique that... 
OPTICS | ALGAAS | CONVERSION | WAVE-GUIDES | QUANTUM | QUBITS
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 06/2010, Volume 81, Issue 23
We investigate theoretically the coupling between a cavity resonator and the cyclotron transition of a two-dimensional electron gas under an applied... 
PHYSICS, CONDENSED MATTER | PHOTON | GAAS/ALGAAS HETEROSTRUCTURES | QUANTUM | ATOM
Journal Article
Scientific Reports, ISSN 2045-2322, 09/2015, Volume 5, Issue 1, p. 14067
Monolithic integration of III-V semiconductor lasers with Si circuits can reduce cost and enhance performance for optical interconnects dramatically. We... 
MULTIDISCIPLINARY SCIENCES | LASERS | GAAS/ALGAAS | Integration | Recombination | Lasers | Circuits | Capacitance | Silicon | Light sources
Journal Article
Journal of the Optical Society of America B: Optical Physics, ISSN 0740-3224, 08/2012, Volume 29, Issue 8, pp. 2199 - 2212
We present equations for the power generated via spontaneous (quantum) and stimulated (classical) nonlinear optical processes in integrated devices. Equations... 
FIBER | CONVERSION | WAVE-GUIDES | GENERATION | OPTICS | ALGAAS MICRORING RESONATORS | ENTANGLED PHOTON PAIRS
Journal Article
Applied Surface Science, ISSN 0169-4332, 04/2018, Volume 436, pp. 460 - 466
•The surface states near VBM is from the under pair As-As in third layer of surface.•The appearance of Al on the surface makes the oxidization of AlGaAs... 
Surface oxidization | Fist-principle calculations | AlGaAs materials | Band gap states | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | OPTICAL-PROPERTIES | CHEMISTRY, PHYSICAL | ALGAAS | OXYGEN | GAP | ABSORPTION | MATERIALS SCIENCE, COATINGS & FILMS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 09/2019, Volume 115, Issue 13, p. 131102
We study the impact of misfit dislocations on the luminescence from InAs quantum dots (QDs) grown on Si substrates. Electron channeling contrast imaging is... 
PHYSICS, APPLIED | RANDOM-POPULATION | DEGRADATION | RELAXATION | MISFIT | GAAS/ALGAAS LASERS | GAAS | DIFFUSION LENGTH
Journal Article
Optics Express, ISSN 1094-4087, 2005, Volume 13, Issue 6, pp. 1797 - 1807
The interaction between parallel beams in one-dimensional discrete Kerr systems has been investigated using arrays of coupled channel waveguides. The... 
SOLITONS | OPTICS | ALGAAS | ARRAYS
Journal Article
Optics Express, ISSN 1094-4087, 02/2015, Volume 23, Issue 4, pp. 4650 - 4657
We propose high index contrast InGaP photonic wires as a platform for the integration of nonlinear optical functions in the telecom wavelength window. We... 
ON-CHIP | CONVERSION | SILICON | GENERATION | OPTICS | ALGAAS | OPTICAL INTERCONNECTS | GAIN | NM
Journal Article
Nano Letters, ISSN 1530-6984, 03/2016, Volume 16, Issue 3, pp. 1917 - 1924
The growth of III–III–V axial heterostructures in nanowires via the vapor–liquid–solid method is deemed to be unfavorable because of the high solubility of... 
AlGaAs | self-catalyzed | interfaces | Nanowires | heterostructure | HAADF | Aluminum gallium arsenides | Catalysts | Gallium arsenide | Mathematical models | Droplets | Nanostructure | Heterostructures
Journal Article
Optics Express, ISSN 1094-4087, 09/2012, Volume 20, Issue 20, pp. 22181 - 22187
We report the first room-temperature continuous-wave operation of III-V quantum-dot laser diodes monolithically grown on a Si substrate. Long-wavelength... 
SILICON PHOTONICS | PERFORMANCE | DEVICES | OPTICS | GAAS | GAAS/ALGAAS | LAYERS | Indium - chemistry | Gallium - chemistry | Quantum Dots | Lasers, Semiconductor | Arsenicals - chemistry | Materials Testing | Electric Conductivity | Equipment Design | Silicon - chemistry | Crystallization - methods | Equipment Failure Analysis
Journal Article
OPTICS EXPRESS, ISSN 1094-4087, 11/2013, Volume 21, Issue 23, pp. 28801 - 28808
We present analytical considerations of "self-mode-locked" operation in a typical vertical external-cavity surface-emitting laser (VECSEL) cavity geometry by... 
OUTPUT POWER | AMPLIFIERS | SEMICONDUCTOR DISK LASER | DISPERSION | DYNAMICS | GENERATION | INDEX | OPTICS | ALGAAS | NONLINEAR REFRACTION | PULSES
Journal Article
ACS Applied Materials and Interfaces, ISSN 1944-8244, 08/2018, Volume 10, Issue 32, pp. 27488 - 27497
The ternary III-V semiconductor compound, Al Ga As, is an important material that serves a central role within a variety of nanoelectronic, optoelectronic, and... 
AlGaAs | metal-assisted chemical etching | nanopillar | I-MacEtch | Nanostructures | Semiconductors | Hydrogen Peroxide | Metals
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 03/2016, Volume 31, Issue 4, p. 45002
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2019, Volume 10843
Conference Proceeding
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