X
Search Filters
Format Format
Format Format
X
Sort by Item Count (A-Z)
Filter by Count
Journal Article (7106) 7106
Conference Proceeding (1059) 1059
Publication (264) 264
Dissertation (164) 164
Book Chapter (60) 60
Magazine Article (19) 19
Government Document (7) 7
Book Review (6) 6
Book / eBook (3) 3
more...
Subjects Subjects
Subjects Subjects
X
Sort by Item Count (A-Z)
Filter by Count
algan (3029) 3029
physics, applied (2823) 2823
gan (2561) 2561
engineering, electrical & electronic (1997) 1997
algan/gan (1653) 1653
hemts (1483) 1483
gallium nitride (1299) 1299
hemt (1256) 1256
materials science, multidisciplinary (1241) 1241
physics, condensed matter (1204) 1204
gallium nitrides (1092) 1092
aluminum gallium nitride (1020) 1020
aluminum gallium nitrides (972) 972
algan/gan hemts (931) 931
devices (728) 728
modfets (725) 725
aluminiumgalliumnitrid (712) 712
field-effect transistors (697) 697
galliumnitrid (695) 695
transistors (692) 692
semiconductor devices (685) 685
high electron mobility transistors (658) 658
logic gates (641) 641
aln (512) 512
heterostructures (497) 497
algan/gan hemt (484) 484
drei-fünf-verbindung (461) 461
analysis (454) 454
galliumverbindung (452) 452
growth (452) 452
sapphire (451) 451
nanoscience & nanotechnology (435) 435
wide band gap semiconductors (427) 427
performance (417) 417
algan/gan heterostructures (410) 410
voltage (407) 407
aluminiumverbindung (402) 402
silicon (399) 399
halbleiter mit grosser energielücke (384) 384
polarization (381) 381
physics, multidisciplinary (380) 380
epitaxy (372) 372
current collapse (358) 358
liquors (352) 352
passivation (351) 351
electric properties (331) 331
temperature (326) 326
heterostruktur (324) 324
semiconductors (323) 323
substrates (320) 320
mocvd (319) 319
electron-mobility transistors (318) 318
films (318) 318
optics (305) 305
molecular-beam epitaxy (299) 299
gates (297) 297
aluminum nitride (286) 286
transistor (283) 283
light-emitting-diodes (280) 280
mobility (277) 277
photoluminescence (275) 275
nitrides (272) 272
breakdown voltage (270) 270
threshold voltage (262) 262
density (248) 248
leakage current (247) 247
crystallography (238) 238
gallium compounds (234) 234
chemical-vapor-deposition (229) 229
electric potential (225) 225
usage (224) 224
reliability (222) 222
electron mobility (218) 218
layers (213) 213
diodes (210) 210
電子 (210) 210
aluminum compounds (201) 201
movpe (197) 197
2deg (195) 195
stress (193) 193
high electron mobility transistor (191) 191
physics (190) 190
hfet (187) 187
leckstrom (184) 184
quantum wells (180) 180
ultraviolet (179) 179
degradation (178) 178
aluminum (177) 177
defects (177) 177
substrate (177) 177
light-emitting diodes (174) 174
metallorganische gasphasenabscheidung (174) 174
strain (171) 171
temperature measurement (171) 171
heterostructure (170) 170
piezoelectric polarization (170) 170
gallium nitrate (169) 169
research (169) 169
mathematical models (168) 168
hfets (167) 167
more...
Language Language
Language Language
X
Sort by Item Count (A-Z)
Filter by Count
English (7587) 7587
Japanese (712) 712
Chinese (206) 206
Korean (12) 12
French (4) 4
Russian (3) 3
German (2) 2
Afrikaans (1) 1
Lithuanian (1) 1
Polish (1) 1
Turkish (1) 1
more...
Publication Date Publication Date
Click on a bar to filter by decade
Slide to change publication date range


IEEE Electron Device Letters, ISSN 0741-3106, 02/2016, Volume 37, Issue 2, pp. 165 - 168
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2017, Volume 110, Issue 10, p. 103506
Ga2O3 field-plated Schottky barrier diodes (FP-SBDs) were fabricated on a Si-doped n(-)-Ga2O3 drift layer grown by halide vapor phase epitaxy on a Sn-doped... 
ALGAN/GAN HEMTS | VOLTAGE | PHYSICS, APPLIED
Journal Article
Applied Physics Letters, ISSN 0003-6951, 02/2018, Volume 112, Issue 7, p. 71107
We report on the high efficiency tunnel-injected ultraviolet light emitting diodes (UV LEDs) emitting at 287 nm. Deep UV LED performance has been limited by... 
PHYSICS, APPLIED | ALGAN
Journal Article
Applied Physics Express, ISSN 1882-0778, 03/2017, Volume 10, Issue 3, p. 31002
Enhancing the light-extraction efficiency is the key issue for realizing highly efficient AlGaN-based ultraviolet light-emitting diodes (UV-LEDs). We... 
PHYSICS, APPLIED | ALN | UV-LEDS | ALGAN
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 08/2014, Volume 29, Issue 8
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2008, Volume 93, Issue 17, p. 173505
A series of MgxZn1-xO thin films has been prepared by metalorganic chemical vapor deposition and metal-semiconductor-metal structured ultraviolet... 
PHYSICS, APPLIED | PHOTODIODES | FILMS | ALGAN
Journal Article
by Cao, Y and Chu, R and Li, R and Chen, M and Chang, R and Hughes, B
Applied Physics Letters, ISSN 0003-6951, 02/2016, Volume 108, Issue 6, p. 62103
Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical vapor deposition on free-standing GaN substrates. The carbon doping... 
HVPE | TRANSISTORS | PHYSICS, APPLIED | TEMPLATE | ALGAN
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2018, Volume 113, Issue 15, p. 152104
In this letter, gate leakage mechanisms in different gate contact normally off p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) have been studied by... 
PHYSICS, APPLIED | RELIABILITY | ALGAN/GAN
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2016, Volume 109, Issue 19, p. 191105
We discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the... 
PHYSICS, APPLIED | ALGAN | MATERIALS SCIENCE
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 01/2011, Volume 26, Issue 1, p. 014036
The field of AlGaInN ultraviolet UV light-emitting diodes (LEDs) is reviewed, with a summary of the state-of-the-art in device performance and enumeration of... 
ALN/ALGAN SUPERLATTICES | SAPPHIRE | PHYSICS, CONDENSED MATTER | ALN | MATERIALS SCIENCE, MULTIDISCIPLINARY | LEDS | LAYERS | ENGINEERING, ELECTRICAL & ELECTRONIC | GROWTH | EMISSION | EFFICIENCY | ALGAN | INDIUM
Journal Article
Sensors and Actuators, B: Chemical, ISSN 0925-4005, 02/2019, Volume 280, pp. 138 - 143
In this paper, a method to extend the detection range of hydrogen sulfide (H S) gas sensor is demonstrated. The sensor is based on AlGaN/GaN high electron... 
HEMT | Gas sensor | AlGaN/GaN
Journal Article
Journal Article
Applied Physics Express, ISSN 1882-0778, 2014, Volume 7, Issue 4, p. 41003
We report recessed-gate Al2O3/AlGaN/GaN normally-OFF metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) on 8 in. Si. The MOS-HEMTs showed... 
PHYSICS, APPLIED | PERFORMANCE | ALGAN/GAN
Journal Article
Applied Physics Letters, ISSN 0003-6951, 06/2017, Volume 110, Issue 26, p. 261603
The impact of thin Ga-oxide (GaOx) interlayers on the electrical properties of GaN-based metal-oxide-semiconductor (MOS) devices was systematically... 
OXIDATION | GAN/ALGAN HETEROSTRUCTURES | TRANSISTORS | PHYSICS, APPLIED
Journal Article
IEEE Photonics Technology Letters, ISSN 1041-1135, 03/2015, Volume 27, Issue 6, pp. 642 - 645
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2013, Volume 103, Issue 3, p. 33524
This paper demonstrates the compensation of the intrinsic positive charges in Al2O3 gate dielectric by fluorine ions in GaN metal-oxide-semiconductor... 
PLASMA TREATMENT | PHYSICS, APPLIED | OPERATION | ALGAN/GAN
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 01/2019, Volume 52, Issue 11, p. 115102
Ultraviolet (UV)-A light-emitting diode (LED) light sources are strongly demanded for both medical and photochemical applications. In our previous report, we... 
UV-A LED | low-pressure metalorganic vapor-phase epitaxy | TDDs in n-AlGaN | p-AlGaN | semiconducting AlGaN | superlattices | PHYSICS, APPLIED
Journal Article
Applied Physics Letters, ISSN 0003-6951, 06/2003, Volume 82, Issue 22, pp. 3901 - 3903
A multistep pulsed-laser deposition (PLD) process is presented for epitaxial, nominally undoped ZnO thin films of total thickness of 1 to 2 mum on c-plane... 
PHYSICS, APPLIED | STRESS | LAYER | GAN | ALGAN | INTERLAYERS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2013, Volume 102, Issue 19, p. 192107
We report the demonstration of monolithically integrated light-emitting diodes (LEDs) and power metal-oxide-semiconductor channel high-electron-mobility... 
ALGAN/GAN HEMTS | PHYSICS, APPLIED | SILICON
Journal Article
No results were found for your search.

Cannot display more than 1000 results, please narrow the terms of your search.