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Angewandte Chemie International Edition, ISSN 1433-7851, 06/2015, Volume 54, Issue 27, pp. 7764 - 7769
Journal Article
Advanced Materials, ISSN 0935-9648, 07/2019, Volume 31, Issue 29, pp. 1970211 - n/a
The use of vertically oriented graphene nanowalls as a buffer layer for the growth of high‐quality AlN film on a sapphire substrate to improve heat dissipation... 
vertically‐oriented graphene nanowalls | strain‐free | AlN films | heat dissipation | Circuit components | Light-emitting diodes | Graphene | Graphite | Buffer layers | Injection current | Ultraviolet radiation | Sapphire | Strain relaxation | Energy dissipation | Organic light emitting diodes | Product design | Diodes | Substrates
Journal Article
Applied Surface Science, ISSN 0169-4332, 04/2017, Volume 402, pp. 392 - 399
[Display omitted] •High-quality AlN epitaxial films were grown successfully on c-sapphire substrates using a thin ZnO buffer layer.•SAW devices with a center... 
Surface acoustic wave | ZnO buffer layer | AlN epitaxial films | Aluminum compounds | Zinc oxide | Usage | Epitaxy | Quality management
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2005, Volume 276, Issue 3, pp. 415 - 418
Hexagonal GaN films on Si(1 1 1) substrates have been grown by metalorganic vapor phase epitaxy (MOVPE). High-temperature AlN buffers provided a reliable... 
B1. Nitrides | B2. Semiconducting III–V materials | A3. Metalorganic vapor phase epitaxy | B2. Semiconducting III-V materials | SAPPHIRE | ALN | semiconducting III-V materials | SILICON | CRYSTALLOGRAPHY | nitrides | metalorganic vapor phase epitaxy | Growth | Epitaxy | Liquors
Journal Article
Reviews of Modern Physics, ISSN 0034-6861, 10/2015, Volume 87, Issue 4, pp. 1133 - 1138
This is a personal history of one of the Japanese researchers engaged in developing a method for growing GaN on a sapphire substrate, paving the way for the... 
LIGHT-EMITTING-DIODES | DOUBLE-HETEROSTRUCTURE | VAPOR-PHASE EPITAXY | DOPED GAN | ROOM-TEMPERATURE | FILMS | ALN | PHYSICS, MULTIDISCIPLINARY | CRYSTAL-GROWTH | SUBSTRATE | MOVPE GROWTH | Electron beams | Television | Sapphire | Gallium nitrides | Light-emitting diodes | Paving | Lectures | Deposition
Journal Article
Nanoscale Research Letters, ISSN 1931-7573, 2015, Volume 10, Issue 1, p. 91
ZnO films were prepared on p-Si (111) substrates by using atomic layer deposition. High-resolution x-ray diffraction (XRD), scanning electron microscopy (SEM),... 
ALD | AlN buffer layer | Band alignment | Heterojunction | PHYSICS, APPLIED | ZNO FILMS | MATERIALS SCIENCE, MULTIDISCIPLINARY | GROWTH | NANOSCIENCE & NANOTECHNOLOGY | OXIDES | Aluminum compounds | X-ray spectroscopy | Electron microscopy | Light-emitting diodes | Analysis | Photoluminescence
Journal Article
physica status solidi (b), ISSN 0370-1972, 08/2017, Volume 254, Issue 8, p. n/a
We demonstrated how annealing of the sputtered AlN buffer layer (sp‐AlN) on r‐plane sapphire could be used to produce a high‐crystalline‐quality a‐plane GaN... 
buffer layers | AlN | annealing | sputtering | GaN | nonpolar surfaces | VAPOR-PHASE EPITAXY | PHYSICS, CONDENSED MATTER | FILM | DEPENDENCE | LIGHT-EMITTING-DIODES | SUBSTRATE | GROWTH | EFFICIENCY | Aluminum compounds | Annealing | Liquors
Journal Article
physica status solidi (b), ISSN 0370-1972, 05/2016, Volume 253, Issue 5, pp. 801 - 808
In this study, we report about an analysis of the crystal quality and stress conditions of aluminum nitride (AlN) buffer layers by changing several process... 
buffer layers | mechanical stress | AlN | silicon | GaN | MOCVD | Buffer layers | Silicon | Mechanical stress | PHYSICS, CONDENSED MATTER | FILMS | CHEMICAL-VAPOR-DEPOSITION | MOVPE | Aluminum compounds | Nitrides | Raman spectroscopy | Epitaxy | Analysis | Thickness | Stresses | Reduction | Crystal defects | Crystals | Electric fields | Aluminum nitride
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 08/2018, Volume 57, Issue 8, p. 85502
A conventional two-step growth process is still the state-of-the-art technology for the epitaxy of GaN, even if graphene is used as a substrate. Lowtemperature... 
PHYSICS, APPLIED | ALN | LUMINESCENCE | DER-WAALS EPITAXY | STACKING-FAULTS | GALLIUM NITRIDE | NUCLEATION | Buffer layers | State of the art | Nucleation | Wurtzite | Gallium nitrides | Vapor phases | Photoluminescence | Substrates | Vapor phase epitaxy | Graphene | Morphology | Optical properties | Epitaxial growth
Journal Article
Materials Chemistry and Physics, ISSN 0254-0584, 12/2016, Volume 184, pp. 291 - 297
The gate stack composed of a crystalline ZrO2 high-K dielectric and an AlN buffer layer treated with the remote NH3 plasma was proposed and developed. The AlN... 
Buffer layer | NH3 plasma | Zirconium dioxide (ZrO2) | Metal oxide semiconductor (MOS) | Aluminum nitride (AlN) | Atomic layer deposition (ALD) | plasma | Zirconium dioxide (ZrO | THERMAL-STABILITY | LEAKAGE-CURRENT | DEPOSITION | MATERIALS SCIENCE, MULTIDISCIPLINARY | ELECTRICAL-PROPERTIES | AIN-SI | CAPACITANCE | ALUMINUM | ZRO2 | TA2O5 THIN-FILMS | AL2O3 | Aluminum compounds | Plasma physics
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 01/2018, Volume 732, pp. 630 - 636
A combined buffer layer growth process was developed to grow crack-free GaN layers on 8-inch Si(111) wafers and so light-emitting diodes (LEDs). The combined... 
Si substrate | Electron microscopy | GaN | AlN buffer | Light emitting diode | DISLOCATIONS | CHEMICAL-VAPOR-DEPOSITION | MATERIALS SCIENCE, MULTIDISCIPLINARY | METALLURGY & METALLURGICAL ENGINEERING | CHEMISTRY, PHYSICAL | EPITAXIAL LAYERS | CENTERS | INTERMEDIATE LAYER | INTERLAYERS | FABRICATION | THIN-FILM | ALGAN
Journal Article
Applied Surface Science, ISSN 0169-4332, 11/2019, Volume 494, pp. 644 - 650
This study investigates that high-quality GaN thin films can be grown on a few-layer graphene (FLG)/sapphire substrate by embedding a hybrid AlN buffer layer... 
AlN | Schottky contact | Threading dislocation | Graphene | GaN | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | CARBON | PERFORMANCE | HIGH-QUALITY | CHEMISTRY, PHYSICAL | GRAPHENE FILMS | ZNO | DIODES | MATERIALS SCIENCE, COATINGS & FILMS | Thin films | Epitaxy | Graphite | Aluminum compounds | Dielectric films | Chemical vapor deposition
Journal Article