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IEEE Photonics Technology Letters, ISSN 1041-1135, 06/2018, Volume 30, Issue 11, pp. 1048 - 1051
We report avalanche photodiodes (APDs) fabricated from the digital alloy Al 0.8 In 0.2 As 0.23 Sb 0.77 (lattice-matched to GaSb). The APDs exhibit high... 
photodetectors | PIN photodiodes | Digital alloys | optoelectronic devices | Avalanche photodiodes | Capacitance | Photoconductivity | Current density | Physics | PHYSICS, APPLIED | MULTIPLICATION NOISE | V COMPOUND SEMICONDUCTORS | OPTICS | OHMIC CONTACTS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal of Lightwave Technology, ISSN 0733-8724, 01/2016, Volume 34, Issue 2, pp. 278 - 285
Journal Article
Journal of Lightwave Technology, ISSN 0733-8724, 09/2018, Volume 36, Issue 17, pp. 3580 - 3585
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2014, Volume 35, Issue 3, pp. 372 - 374
This letter reports high performance AlGaN solar-blind avalanche photodiodes (APDs) with separate absorption and multiplication structure grown by... 
Absorption | Electric breakdown | photo-electrochemical treatment | Lighting | Avalanche photodiodes | Dark current | solar blind | separate absorption and multiplication | Gallium nitride | Aluminum gallium nitride | AlGaN | avalanche photodiodes | TEMPERATURE-DEPENDENCE | IMPACT IONIZATION | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Applied Physics Letters, ISSN 0003-6951, 09/2011, Volume 99, Issue 13, pp. 131110 - 131110-3
Near ultraviolet-sensitive separate absorption and multiplication avalanche photodiodes with GaN/SiC epitaxial layers grown on SiC substrate were fabricated.... 
gallium compounds | PHYSICS, APPLIED | silicon | avalanche photodiodes | dark conductivity | electric breakdown | semiconductor epitaxial layers | III-V semiconductors
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2019, Volume 115, Issue 17
3D band structure-based Monte Carlo simulations have been utilized to simulate InAlAs digital alloy avalanche photodiodes. The simulated current–voltage curve... 
Computer simulation | Avalanche diodes | Indium aluminum arsenides | Ionization coefficients | Noise factor | Photodiodes
Journal Article
Journal of Lightwave Technology, ISSN 0733-8724, 06/2017, Volume 35, Issue 12, pp. 2380 - 2384
Journal Article
IEEE Journal of Quantum Electronics, ISSN 0018-9197, 02/2013, Volume 49, Issue 2, pp. 154 - 161
We report two InAs avalanche photodiode structures with very low background doping in the depletion region. Uniform electric fields and thick depletion regions... 
Temperature measurement | Semiconductor device measurement | Current measurement | Noise | gain-bandwidth product | Doping | Dark current | Gain measurement | Avalanche photodiode | excess noise | Monte Carlo simulation | Measurement | Monte Carlo method | Usage | Bandwidth | Indium | Simulation methods | Electric properties
Journal Article
Nuclear Inst. and Methods in Physics Research, A, ISSN 0168-9002, 2006, Volume 567, Issue 1, pp. 48 - 56
Geiger-mode avalanche photodiodes (G-APDs) have been developed during recent years and promise to be an alternative to photomultiplier tubes. They have many... 
Geiger-mode Avalanche Photodiode | Photosensor | Avalanche Photodiode | SiPM | photosensor | avalanche photodiode | INSTRUMENTS & INSTRUMENTATION | MICROPLASMA | SPECTROSCOPY | NUCLEAR SCIENCE & TECHNOLOGY | Geiger-mode avalanche photodiode | SILICON | LIGHT | PHYSICS, PARTICLES & FIELDS
Journal Article
Journal Article
Nano Letters, ISSN 1530-6984, 01/2019, Volume 19, Issue 1, pp. 582 - 590
Single-photon detection at near-infrared (NIR) wavelengths is critical for light detection and ranging (LiDAR) systems used in imaging technologies such as... 
free-running mode | avalanche photodiodes | InGaAs?GaAs | near-infrared | single-photon detection | nanowires | PHYSICS, CONDENSED MATTER | DESIGN | PHYSICS, APPLIED | MULTIPLICATION | PERFORMANCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | InGaAs-GaAs | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | INP | CHEMISTRY, MULTIDISCIPLINARY | PHOTODETECTORS | SEPARATE ABSORPTION
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 04/2017, Volume 38, Issue 4, pp. 485 - 488
A heterostructure multiplication region consisting of high/low-Al-content AlGaN layers instead of the conventional high-Al-content AlGaN homogeneous layer was... 
Electric breakdown | Avalanche photodiodes | Dark current | Impact ionization | Wide band gap semiconductors | separate absorption and multiplication | heterostructure | Aluminum gallium nitride | AlGaN | Heterostructure | Separate absorption and multiplication | avalanche photodiodes | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, 03/2018, Volume 24, Issue 2, pp. 1 - 11
Silicon photonics is considered as one of the promising technologies for high-speed optical fiber communications. Among various silicon photonic devices,... 
germanium on silicon | Annealing | Absorption | Avalanche photodiodes | Silicon | Optical fiber communication | fiber communications | Optical fiber devices | Avalanche photodiode | silicon photonics | Electric fields | Fiber communications | Silicon photonics | Germanium on silicon
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 06/2009, Volume 56, Issue 3, pp. 1006 - 1011
The performance of a silicon drift detector (SDD) with an integrated FET, delivered by the company PNSensor, Munich, Germany, was studied in gamma spectrometry... 
Photomultipliers | Spectroscopy | Temperature | PIN photodiodes | Gamma ray detectors | Energy resolution | Avalanche photodiodes | silicon drift detectors | LaBr _{3} scintillator | Silicon | Gamma ray detection | FETs
Journal Article
Nanoscale Research Letters, ISSN 1931-7573, 12/2017, Volume 12, Issue 1, pp. 1 - 6
Journal Article
Journal of Lightwave Technology, ISSN 0733-8724, 06/2016, Volume 34, Issue 11, pp. 2639 - 2644
Journal Article
OPTICS LETTERS, ISSN 0146-9592, 07/2019, Volume 44, Issue 14, pp. 3538 - 3541
We demonstrate a III-V avalanche photodiode (APD) grown by heteroepitaxy on silicon. This InGaAs/InAlAs APD exhibits low dark current, gain >20, external... 
OPTICS | Dark current | Indium aluminum arsenides | Silicon | Quantum efficiency | Photodiodes | Avalanche diodes
Journal Article
NATURE PHOTONICS, ISSN 1749-4885, 10/2019, Volume 13, Issue 10, pp. 683 - 683
Fast, sensitive avalanche photodiodes (APDs) are required for applications such as high-speed data communications and light detection and ranging (LIDAR)... 
APDS | PHYSICS, APPLIED | OPTICS | MULTIPLICATION NOISE | BANDWIDTH PRODUCT | GAIN | Lattice matching | Sensitivity | Noise sensitivity | Ionization | Bit error rate | Noise | Avalanche diodes | Lidar | Error detection | Ionization coefficients | Photodiodes | Electric fields
Journal Article
SENSORS, ISSN 1424-8220, 11/2019, Volume 19, Issue 22, p. 4938
The monolithic integration of an ultraviolet (UV) sensor and warning lamp would reduce the cost, volume, and footprint, in comparison to a hybrid combination... 
LIGHT-EMITTING-DIODES | AVALANCHE PHOTODIODES | CHEMISTRY, ANALYTICAL | MONOLITHIC INTEGRATION | INSTRUMENTS & INSTRUMENTATION | PHOTODETECTORS | UV sensors | photodiodes | light-emitting diodes | indium-tin oxide | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
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