X
Search Filters
Format Format
Format Format
X
Sort by Item Count (A-Z)
Filter by Count
Journal Article (5437) 5437
Conference Proceeding (404) 404
Dissertation (235) 235
Publication (204) 204
Book Chapter (88) 88
Book / eBook (80) 80
Newspaper Article (60) 60
Magazine Article (12) 12
Book Review (11) 11
Government Document (8) 8
Journal / eJournal (7) 7
Data Set (1) 1
Web Resource (1) 1
more...
Subjects Subjects
Subjects Subjects
X
Sort by Item Count (A-Z)
Filter by Count
algaas (1847) 1847
physics, applied (1829) 1829
galliumarsenid (1483) 1483
gaas (1304) 1304
engineering, electrical & electronic (1193) 1193
physics, condensed matter (1056) 1056
gaas-algaas (1032) 1032
aluminiumverbindung (813) 813
quantentopf (735) 735
gallium arsenide (639) 639
drei-fünf-verbindung (574) 574
gaas/algaas (509) 509
algaas-gaas (478) 478
algae (439) 439
materials science, multidisciplinary (437) 437
gallium-aluminium-arsenid (436) 436
drei-fuenf-verbindung (396) 396
optics (382) 382
heterostruktur (372) 372
molecular-beam epitaxy (344) 344
halbleiterwerkstoff (338) 338
photolumineszenz (337) 337
research (335) 335
aluminium-gallium-arsenid (328) 328
molekularstrahlepitaxie (323) 323
quantum wells (319) 319
photoluminescence (309) 309
halbleiterlaser (301) 301
halbleiterwachstum (298) 298
materials science (280) 280
heterostructures (279) 279
semiconductors (261) 261
hemt (249) 249
lasers (248) 248
analysis (240) 240
algaas/gaas (233) 233
crystallography (232) 232
growth (231) 231
strom-spannungs-kennlinie (211) 211
epitaxialschicht (203) 203
aluminiumgalliumarsenid (201) 201
halbleiterschicht (197) 197
heteroübergangsbipolartransistor (196) 196
heterouebergang (194) 194
epitaxy (189) 189
physics, multidisciplinary (186) 186
halbleiterepitaxialschicht (185) 185
epitaxialwachstum (181) 181
gallium arsenides (181) 181
heteroübergang (179) 179
heterojunction bipolar transistors (177) 177
metallorganische gasphasenabscheidung (175) 175
indiumverbindung (173) 173
temperature (169) 169
transport (166) 166
mbe (165) 165
nanoscience & nanotechnology (163) 163
physics (158) 158
semiconductor lasers (156) 156
dependence (155) 155
fremdatomzusatz (153) 153
mocvd (148) 148
aluminum gallium arsenides (144) 144
fabrication (144) 144
diffusion (142) 142
bipolartransistor (141) 141
devices (141) 141
spectroscopy (139) 139
exciton (138) 138
layers (138) 138
elektronengas (137) 137
halbleitertechnologie (134) 134
silicon (133) 133
absorption (132) 132
superlattices (132) 132
molecular beam epitaxy (131) 131
temperaturgang (131) 131
tunneleffekt (129) 129
electrons (127) 127
alxga1-xas (126) 126
feldeffekttransistor (126) 126
inp (126) 126
heterouebergangsbipolartransistor (122) 122
metallorganische gasphasenepitaxie (122) 122
elektronenbeweglichkeit (121) 121
ingaas (121) 121
transistors (120) 120
silicium (118) 118
heterojunctions (115) 115
quantenelektronik (115) 115
voltage (115) 115
halbleiterbauelementmodell (113) 113
hemts (113) 113
zweidimensionales elektronengas (113) 113
rekombination (108) 108
ladungsträgerdichte (106) 106
übergitter (106) 106
theoretisches modell (105) 105
scattering (103) 103
gaas/algaas heterostructures (102) 102
more...
Library Location Library Location
Language Language
Language Language
X
Sort by Item Count (A-Z)
Filter by Count
English (5282) 5282
Spanish (285) 285
French (250) 250
Japanese (250) 250
Portuguese (220) 220
Chinese (87) 87
Swedish (25) 25
German (8) 8
Italian (8) 8
Russian (7) 7
Lithuanian (6) 6
Korean (5) 5
Catalan (3) 3
Latin (3) 3
Arabic (2) 2
Danish (2) 2
Indonesian (1) 1
more...
Publication Date Publication Date
Click on a bar to filter by decade
Slide to change publication date range


OPTICS EXPRESS, ISSN 1094-4087, 02/2019, Volume 27, Issue 4, pp. 4238 - 4260
Integrated microresonator-based mid-infrared frequency combs based on HI-V semiconductors exhibit pronounced higher-order group velocity dispersion that can... 
ALGAAS | GENERATION | OPTICS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2018, Volume 112, Issue 15, p. 153507
We investigate the impact of threading dislocation density on the reliability of 1.3 μm InAs quantum dot lasers epitaxially grown on Si. A reduction in the... 
RECOMBINATION | PHYSICS, APPLIED | GROWTH | DIODE-LASERS | GAAS/ALGAAS LASERS | ALGAAS | GAAS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2009, Volume 95, Issue 13, p. 131116
An ultrafast all-optical switching with the response time on the order of 10 fs is demonstrated in a three-dimensional opal polystyrene nonlinear photonic... 
ALGAAS | PHYSICS, APPLIED
Journal Article
Wuli Xuebao/Acta Physica Sinica, ISSN 1000-3290, 04/2018, Volume 67, Issue 8
Journal Article
Optics Letters, ISSN 0146-9592, 09/2008, Volume 33, Issue 18, pp. 2026 - 2028
Semiconductor-based whispering-gallery-mode microcavities are very promising for nonlinear optics applications, thanks to the high optical quality factors... 
ALGAAS MICRORING RESONATORS | OPTICS
Journal Article
Optics Express, ISSN 1094-4087, 07/2017, Volume 25, Issue 15, pp. 18474 - 18484
Generating polarization-entangled photon pairs on chip is generally complicated by the birefringence of waveguides. In this work, we propose a technique that... 
OPTICS | ALGAAS | CONVERSION | WAVE-GUIDES | QUANTUM | QUBITS
Journal Article
NATURE COMMUNICATIONS, ISSN 2041-1723, 01/2014, Volume 5
The (4) over bar crystal symmetry in materials such as GaAs can enable quasi-phasematching for efficient optical frequency conversion without poling, twinning... 
CAVITIES | WAVE-GUIDES | MULTIDISCIPLINARY SCIENCES | RING RESONATORS | DEVICES | OPTICAL HARMONICS | MU-M | ALGAAS MICRORING RESONATORS
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 06/2010, Volume 81, Issue 23
We investigate theoretically the coupling between a cavity resonator and the cyclotron transition of a two-dimensional electron gas under an applied... 
PHYSICS, CONDENSED MATTER | PHOTON | GAAS/ALGAAS HETEROSTRUCTURES | QUANTUM | ATOM
Journal Article
Wuji Cailiao Xuebao/Journal of Inorganic Materials, ISSN 1000-324X, 2018, Volume 33, Issue 3, pp. 266 - 272
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2017, Volume 111, Issue 2, p. 22405
A GaAs/GaAsP strain-compensated superlattice (SL) is a highly promising spin-polarized electron source. To realize higher quantum efficiency, it is necessary... 
DYNAMICS | GAAS/ALGAAS QUANTUM-WELLS | PHYSICS, APPLIED | ELECTRONS
Journal Article
Physical Review Letters, ISSN 0031-9007, 10/1998, Volume 81, Issue 16, pp. 3383 - 3386
We report the observation of discrete spatial optical solitons in an array of 41 waveguides. Light was coupled to the central waveguide. At low power, the... 
MODES | WAVE-GUIDE ARRAYS | PHYSICS, MULTIDISCIPLINARY | ALGAAS
Journal Article
Scientific Reports, ISSN 2045-2322, 09/2015, Volume 5, Issue 1, p. 14067
Monolithic integration of III-V semiconductor lasers with Si circuits can reduce cost and enhance performance for optical interconnects dramatically. We... 
MULTIDISCIPLINARY SCIENCES | LASERS | GAAS/ALGAAS | Integration | Recombination | Lasers | Circuits | Capacitance | Silicon | Light sources
Journal Article
대한금속재료학회지, ISSN 1738-8228, 2017, Volume 55, Issue 8, p. 587
The photoreflectance (PR) method is advantageous in that it is more convenient to use at low temperature and high temperature than electroreflectance (ER) due... 
intensity | AlGaAs | photoreflectance | GaAs
Journal Article
Journal of the Optical Society of America B: Optical Physics, ISSN 0740-3224, 08/2012, Volume 29, Issue 8, pp. 2199 - 2212
We present equations for the power generated via spontaneous (quantum) and stimulated (classical) nonlinear optical processes in integrated devices. Equations... 
FIBER | CONVERSION | WAVE-GUIDES | GENERATION | OPTICS | ALGAAS MICRORING RESONATORS | ENTANGLED PHOTON PAIRS
Journal Article
Applied Surface Science, ISSN 0169-4332, 04/2018, Volume 436, pp. 460 - 466
•The surface states near VBM is from the under pair As-As in third layer of surface.•The appearance of Al on the surface makes the oxidization of AlGaAs... 
Surface oxidization | Fist-principle calculations | AlGaAs materials | Band gap states | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | OPTICAL-PROPERTIES | CHEMISTRY, PHYSICAL | ALGAAS | OXYGEN | GAP | ABSORPTION | MATERIALS SCIENCE, COATINGS & FILMS
Journal Article
JOURNAL OF PHYSICS D-APPLIED PHYSICS, ISSN 0022-3727, 08/2019, Volume 52, Issue 34, p. 343002
Journal Article
Applied Physics Letters, ISSN 0003-6951, 09/2019, Volume 115, Issue 13, p. 131102
We study the impact of misfit dislocations on the luminescence from InAs quantum dots (QDs) grown on Si substrates. Electron channeling contrast imaging is... 
PHYSICS, APPLIED | RANDOM-POPULATION | DEGRADATION | RELAXATION | MISFIT | GAAS/ALGAAS LASERS | GAAS | DIFFUSION LENGTH
Journal Article
Solid State Communications, ISSN 0038-1098, 03/2020, Volume 309, p. 113837
GaAsSb based materials have become the promising system for infrared semiconductor lasers and detectors. In this article, the strain, energy band structures... 
D. photoluminescence | A. GaAsSb/AlGaAs strained quantum well | B. molecular beam epitaxy | C. band structure
Journal Article
Optics Express, ISSN 1094-4087, 02/2015, Volume 23, Issue 4, pp. 4650 - 4657
We propose high index contrast InGaP photonic wires as a platform for the integration of nonlinear optical functions in the telecom wavelength window. We... 
ON-CHIP | CONVERSION | SILICON | GENERATION | OPTICS | ALGAAS | OPTICAL INTERCONNECTS | GAIN
Journal Article
No results were found for your search.

Cannot display more than 1000 results, please narrow the terms of your search.