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IEEE Electron Device Letters, ISSN 0741-3106, 07/2018, Volume 39, Issue 7, pp. 995 - 998
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 11/2015, Volume 36, Issue 11, pp. 1132 - 1134
A large GaN-Schottky barrier diode (SBD) with a recessed dual anode metal is proposed to achieve improved the forward characteristics without a degradation of... 
AlGaN/GaN on Si | low turn-on voltage | recess dual anode metal | Schottky barrier diode (SBD) | VOLTAGE | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2013, Volume 34, Issue 2, pp. 214 - 216
A novel AlGaN/GaN-on-Si rectifier with a gated ohmic anode has been proposed to reduce the turn-on voltage without breakdown-voltage degradation. The... 
gated ohmic anode | Breakdown voltage | Schottky barriers | AlGaN/GaN-on-Si | rectifier | Logic gates | HEMTs | turn-on voltage | Anodes | Gallium nitride | Aluminum gallium nitride | breakdown voltage | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
by Kim, DH and Park, H and Eom, SK and Jeong, JS and Cha, HY and Seo, KS
IEEE ELECTRON DEVICE LETTERS, ISSN 0741-3106, 07/2018, Volume 39, Issue 7, pp. 995 - 998
This letter reports the excellent radio frequency output characteristics of AlGaN/GaN-on-Si power amplifier (PA) monolithic microwave integrated circuits... 
power amplifier | VOLTAGE | dual MIS | AlGaN/GaN-on-Si | SILICON | Ka-band | ENGINEERING, ELECTRICAL & ELECTRONIC | high-k | POWER-AMPLIFIER | TRANSISTORS | LEAKAGE | gate recess | HEMTS | DEVICES | MMIC
Journal Article
by Hu, AQ and Song, CY and Yang, XL and He, XY and Shen, B and Guo, X
NANOTECHNOLOGY, ISSN 0957-4484, 08/2019, Volume 30, Issue 31, p. 314002
We identify the spatially resolved trapping mechanism and clarify the role of the unintentionally doped (UID) GaN layer in suppressing the two-dimensional... 
AlGaN/GaN on Si | TRANSISTORS | PHYSICS, APPLIED | CARBON | UID GaN | MATERIALS SCIENCE, MULTIDISCIPLINARY | hole trapping | HEMTS | NANOSCIENCE & NANOTECHNOLOGY | 2DEG degradation
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 10/2012, Volume 33, Issue 10, pp. 1372 - 1374
We report a new generation of high-performance AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity Si (111) substrates. We map out... 
Performance evaluation | AlGaN/GaN on Si | load-pull characterization | large signal | HEMTs | Logic gates | Silicon | Gallium nitride | Aluminum gallium nitride | Power generation | high-electron-mobility transistors (HEMTs) | DENSITY | W/MM | GANHEMTS | PAE | PERFORMANCE | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 10/2014, Volume 35, Issue 10, pp. 995 - 997
A 29.4-W X-band high-power amplifier has been substantialized using GaN on high-resistive silicon substrate. The developed GaN high electron mobility... 
power density | PAE | AlGaN/GaN-on-Si | HEMTs | X-band | Silicon | amplifier | MODFETs | Gallium nitride | Substrates | Aluminum gallium nitride | Power generation | Power density | Amplifier | Algan/gan-on-si | Pae | ELECTRON-MOBILITY TRANSISTORS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 12/2017, Volume 64, Issue 12, pp. 5048 - 5056
Journal Article
Superlattices and Microstructures, ISSN 0749-6036, 02/2019, Volume 126, pp. 57 - 62
Since the small lattice constant of wurtzite BGaN alloy and the good insulating property of its epitaxial layer, the use of the BGaN with a small B-content... 
Back barrier | 2DEG | HEMT | BGaN | 2DHG | AlGaN/GaN | PHYSICS, CONDENSED MATTER | WELL | ALGAN/GAN-ON-SI | MOBILITY TRANSISTORS | Usage | Transistors | Epitaxy | Alloys | Electrons
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 07/2018, Volume 39, Issue 7, pp. 995 - 998
This letter reports the excellent radio frequency output characteristics of AlGaN/GaN-on-Si power amplifier (PA) monolithic microwave integrated circuits... 
power amplifier | dual MIS | AlGaN/GaN-on-Si | Gallium nitride | Ka-band | Radio frequency | high-k | gate recess | Logic gates | HEMTs | Wide band gap semiconductors | Aluminum gallium nitride | Power generation | MMIC | Integrated circuits | Gallium nitrides | Power amplifiers | MMIC (circuits) | Power efficiency | Aluminum gallium nitrides | Continuous radiation
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 11/2015, Volume 36, Issue 11, pp. 1132 - 1134
A large GaN-Schottky barrier diode (SBD) with a recessed dual anode metal is proposed to achieve improved the forward characteristics without a degradation of... 
Schottky diodes | AlGaN/GaN on Si | low turn-on voltage | Schottky barriers | recess dual anode metal | Wide band gap semiconductors | Anodes | Gallium nitride | Aluminum gallium nitride | Schottky barrier diode (SBD) | Electric potential | Barriers | Voltage | Leakage current | Devices | Diodes | Channels
Journal Article
Superlattices and Microstructures, ISSN 0749-6036, 07/2015, Volume 83, pp. 811 - 818
The influence of AlN/GaN superlattices (SL) buffer on the characteristics of AlGaN/GaN-on-Si (1 1 1) template was studied in detail. There existed an optimized... 
MOCVD | AlGaN/GaN-on-Si | AlN/GaN superlattices buffer | THIN-FILMS | PHYSICS, CONDENSED MATTER | QUALITY | CHEMICAL-VAPOR-DEPOSITION | SILICON | STRESS-CONTROL | FIELD-EFFECT TRANSISTORS | GAN | GROWTH | PHASE EPITAXY
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 12/2015, Volume 62, Issue 6, pp. 3362 - 3368
Proton irradiation at 5 MeV was performed on normally-off AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors and normally-on... 
heterostructure FETs | Radiation effects | Proton radiation effects | high electron mobility transistors | FET circuits | AlGaN/GaN-on-Si | displacement damage | HEMTs | proton irradiation | trap | Transistors | VOLTAGE | ELECTRON-MOBILITY | GAN MIS-HEMTS | RF PERFORMANCE | ENGINEERING, ELECTRICAL & ELECTRONIC | DENSITY | NUCLEAR SCIENCE & TECHNOLOGY | DEGRADATION | INDUCED CHARGE
Journal Article
Cryogenics, ISSN 0011-2275, 07/2018, Volume 93, pp. 51 - 55
We investigated the low-temperature operation of normally-off AlGaN/GaN heterostructure field-effect-transistors (HFETs) with gate-recessed... 
Cryogenic | Heterostructure | AlGaN/GaN-on-Si | Recessed-gate | Low-temperature | Mobility | Normally-off | 2-DEG | Power | PHYSICS, APPLIED | HETEROSTRUCTURES | MIS-HEMTS | THERMODYNAMICS | DEVICES | POLARIZATION | Electrical engineering | Transistors | Electric properties
Journal Article
physica status solidi (c), ISSN 1862-6351, 04/2014, Volume 11, Issue 3‐4, pp. 862 - 865
AlGaN/GaN Schottky barrier diodes (SBDs) have been fabricated on GaN‐on‐Si wafers (8‐inch) with Au‐free CMOS compatible technology. Two types of Edge... 
edge termination | leakage current | forward voltage | Schottky barrier diode | AlGaN/GaN‐on‐Si | Leakage current | Edge termination | AlGaN/GaN-on-Si | Forward voltage | Terminations | Electric potential | Reduction | Gallium nitrides | Wafers | Aluminum gallium nitrides | Anodes
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 09/2015, Volume 30, Issue 10, p. 105037
The influence of different C-doping locations in a GaN/Si structure with a GaN/AlN superlattice (SL) buffer on the material and electrical properties of GaN/Si... 
AlGaN/GaN on Si | leakage current | carbon doping location | HFET | breakdown voltage | SAPPHIRE | PHYSICS, CONDENSED MATTER | C-DOPED GAN | INTERLAYER | ALN | DHFETS | MOBILITY | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON | RESISTIVITY | ENGINEERING, ELECTRICAL & ELECTRONIC | THICK
Journal Article
physica status solidi (c), ISSN 1862-6351, 04/2014, Volume 11, Issue 3‐4, pp. 949 - 952
The GaN‐to‐Si vertical conduction mechanisms on a low resistivity p‐type (111) Si substrate under high‐voltage operation are investigated using the... 
high‐voltage C‐V | GaN/Si interface | vertical conduction mechanisms | AlGaN/GaN‐on‐Si | High-voltage C-V | AlGaN/GaN-on-Si | Vertical conduction mechanisms | Ionization | Gallium nitrides | Conduction heating | Inversions | Silicon | Aluminum gallium nitrides | Devices | Electric fields
Journal Article
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, ISSN 1598-1657, 2017, Volume 17, Issue 2, pp. 204 - 209
We have investigated a Mo/Au gate scheme for use in AlGaN/GaN-on-Si HFETs. AlGaN/GaN-on-Si HFETs were fabricated with Ni/Au or Mo/Au gates and their electrical... 
Dynamic characteristics | Pulsed characteristics | Thermal reliability | Mo/Au gate | AlGaN/GaN-on-Si HFET | PHYSICS, APPLIED | HEMT | PERFORMANCE | pulsed characteristics | thermal reliability | dynamic characteristics | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), ISSN 1550-8781, 10/2015, pp. 1 - 4
This work reports on the development of a fully integrated monolithic single-phase diode-clamped multilevel (DCM) converter in a high-voltage AlGaN/GaN-on-Si... 
HEMTs | Logic gates | Schottky diodes | Inverters | Topology | power conversion | HEMT | AlGaN/GaN-on-Si | lateral monolithic integration | multilevel converter | Electric potential | Semiconductors | Chips | Multilevel | Voltage | Links | Conversion
Conference Proceeding
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