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Journal Article
Science (American Association for the Advancement of Science), ISSN 1095-9203, 09/2019, Volume 365, Issue 6460, pp. 1454 - 1457
Journal Article
Applied physics letters, ISSN 1077-3118, 09/2011, Volume 99, Issue 13, pp. 133503 - 133503-3
Journal Article
Applied surface science, ISSN 0169-4332, 10/2016, Volume 383, pp. 324 - 345
Journal Article
IEEE electron device letters, ISSN 0741-3106, 11/2014, Volume 35, Issue 11, pp. 1127 - 1129
A GaN bulk acoustic wave resonator is presented in this letter, showing fundamental thickness-mode resonance at 2.18 GHz, with a quality factor (Q) of 655 and... 
Temperature measurement | GaN | Resonant frequency | TCF | HEMTs | MEMS resonator | Gallium nitride | Aluminum gallium nitride | Passivation | Thickness measurement | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology
Journal Article
Materials science in semiconductor processing, ISSN 1369-8001, 05/2017, Volume 62, pp. 180 - 191
Journal Article
IEEE transactions on electron devices, ISSN 0018-9383, 03/2017, Volume 64, Issue 3, pp. 1197 - 1202
Field plate (FP) control of current collapse and channel electric field distribution in AlGaN/GaN High Electron Mobility Transistors is investigated as a function of low-pressure chemical vapor deposition silicon-nitride stoichiometry... 
High Electron Mobility Transistor (HEMT) | Electric potential | field plate (FP) | Current measurement | HEMTs | Logic gates | passivation | Wide band gap semiconductors | MODFETs | Aluminum gallium nitride | AlGaN/GaN | Aluminum compounds | High-electron-mobility transistors | Usage | Chemical properties | Gallium compounds | Electric properties | Aluminum gallium nitrides | High electron mobility transistors | Gallium nitrides | Silicon nitride
Journal Article
Journal of crystal growth, ISSN 0022-0248, 12/2016, Volume 456, pp. 133 - 136
The ability to grow III-nitride structures with alternating c-plane orientation has garnered interest in using these materials for new application spaces, such as frequency conversion... 
A1. Polarity | B2. Semiconducting III-nitride materials | B1. Nitrides | B2. Nonlinear optic materials | A1. Crystal structure | Physical Sciences | Materials Science | Technology | Materials Science, Multidisciplinary | Crystallography | Physics | Science & Technology | Physics, Applied | Nitrides | Structure | Crystals | Frequency distribution | Gallium nitride epitaxy | Aluminum gallium nitrides | Gallium nitrides | Conversion
Journal Article