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ELECTRONICS LETTERS, ISSN 0013-5194, 07/2013, Volume 49, Issue 14, pp. 852 - 852
  This research has shown the importance of free-standing GaN substrates with very low threading dislocation density when AlGaN/GaN HEMTs are grown by Ga-rich... 
ENGINEERING, ELECTRICAL & ELECTRONIC | Fracture mechanics | Semiconductor devices | Gallium nitrides | Leakage current | High electron mobility transistors | Aluminum gallium nitrides | Backing | Density
Journal Article
Tribology International, ISSN 0301-679X, 02/2018, Volume 118, pp. 120 - 127
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 11/2014, Volume 35, Issue 11, pp. 1127 - 1129
A GaN bulk acoustic wave resonator is presented in this letter, showing fundamental thickness-mode resonance at 2.18 GHz, with a quality factor (Q) of 655 and... 
Temperature measurement | GaN | Resonant frequency | TCF | HEMTs | MEMS resonator | Gallium nitride | Aluminum gallium nitride | Passivation | Thickness measurement | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Solar Energy Materials and Solar Cells, ISSN 0927-0248, 11/2019, Volume 202
In this study, aluminum gallium nitride/gallium nitride heterostructure grown on the sapphire substrate is used as the photoanodes for the generation of... 
Formic acid | Carbon dioxide | Hydrogen gas | Photoelectrochemical | Aluminum gallium nitride
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 08/2017, Volume 122, Issue 6, p. 65701
In this paper, we study theoretically the hot electron transport in two nitride semiconductor solid solutions, In x Ga1− x N and In x Al1− x N, in the electric... 
MONTE-CARLO | PHYSICS, APPLIED | ALN | ALLOYS | INN | STATE | EMISSION | BAND-GAP | Analysis | Optical properties | Research | Electron transport | Electric fields | Gallium compounds | Electric properties | Solid solutions | Indium gallium nitrides | Electron drift velocity | Gallium nitrides | Aluminum | Dependence | Velocity distribution
Journal Article
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2010, Volume 96, Issue 4, pp. 042105 - 042105-3
Strong plasmon resonances have been observed in the terahertz transmission spectra (1-5 THz) of large-area slit-grating-gate AlGaN/GaN-based... 
gallium compounds | FIELD-EFFECT TRANSISTOR | terahertz waves | DETECTORS | MODES | PHYSICS, APPLIED | aluminium compounds | high electron mobility transistors | plasmonics | wide band gap semiconductors | III-V semiconductors | INVERSION-LAYERS
Journal Article
Optics and Spectroscopy, ISSN 0030-400X, 7/2019, Volume 127, Issue 1, pp. 36 - 39
The reflection and attenuated total reflection spectra of aluminum and gallium nitride films doped with silicon on sapphire substrates with a buffer layer of... 
surface polaritons | aluminum and gallium nitrides | reflection and ATR spectroscopy | Physics | Optics, Lasers, Photonics, Optical Devices | VIBRATIONS | OPTICS | SPECTROSCOPY | Buffer layers | Aluminum | Gallium nitrides | Phonons | Silicon substrates | Electronics | Polaritons | Reflection | Diodes | Current carriers | Sapphire | Carrier density | Aluminum nitride
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2014, Volume 104, Issue 2, p. 23113
We report on the fabrication of a GaN nanowire probe for near-field scanning microwave microscopy. A single nanowire was Pt-bonded to a commercial Si... 
EVANESCENT MICROWAVES | PHYSICS, APPLIED | ATOMIC-FORCE MICROSCOPY | ELECTRICAL CHARACTERIZATION | GHZ | CATALYST-FREE GROWTH | GAN NANOWIRES | NUCLEATION | Microscopy | Gallium nitrides | Silicon | Wear resistance | Nanowires | Protective coatings | Microwave probes | Aluminum coatings
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 09/2015, Volume 425, Issue C, pp. 129 - 132
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 08/2017, Volume 122, Issue 7, p. 75105
Journal Article