X
Search Filters
Format Format
Format Format
X
Sort by Item Count (A-Z)
Filter by Count
Journal Article (7771) 7771
Conference Proceeding (2567) 2567
Newspaper Article (1336) 1336
Publication (378) 378
Government Document (135) 135
Book Chapter (59) 59
Newsletter (51) 51
Book / eBook (40) 40
Magazine Article (32) 32
Trade Publication Article (28) 28
Dissertation (22) 22
Book Review (11) 11
Patent (11) 11
Reference (4) 4
Data Set (1) 1
Paper (1) 1
Technical Report (1) 1
Web Resource (1) 1
more...
Subjects Subjects
Subjects Subjects
X
Sort by Item Count (A-Z)
Filter by Count
gallium nitrides (4023) 4023
gallium nitride (3569) 3569
aluminum gallium nitride (3426) 3426
aluminum gallium nitrides (3248) 3248
physics, applied (2761) 2761
hemts (2620) 2620
aluminum (2288) 2288
gan (1803) 1803
aluminum nitride (1776) 1776
modfets (1702) 1702
engineering, electrical & electronic (1653) 1653
semiconductor devices (1596) 1596
high electron mobility transistors (1313) 1313
transistors (1171) 1171
materials science, multidisciplinary (1133) 1133
logic gates (1118) 1118
substrates (1064) 1064
semiconductors (1043) 1043
inventors (1013) 1013
devices (1005) 1005
wide band gap semiconductors (973) 973
light emitting diodes (892) 892
physics, condensed matter (864) 864
hemt (858) 858
silicon (850) 850
heterostructures (836) 836
aluminum compounds (759) 759
materials science (710) 710
nitrides (692) 692
galliumnitrid (680) 680
analysis (670) 670
molecular beam epitaxy (663) 663
electron mobility (653) 653
gallium compounds (646) 646
patents (632) 632
gates (623) 623
voltage (614) 614
electric properties (588) 588
epitaxy (588) 588
sapphire (585) 585
aluminum oxide (577) 577
chemical vapor deposition (568) 568
aluminiumgalliumnitrid (563) 563
thin films (529) 529
optical properties (526) 526
algan/gan (525) 525
algan (520) 520
silicon carbide (518) 518
electrodes (516) 516
quantum wells (514) 514
density (512) 512
drei-fünf-verbindung (506) 506
electric potential (502) 502
temperature (502) 502
galliumverbindung (484) 484
photoluminescence (478) 478
aluminium nitrides (473) 473
aluminiumverbindung (471) 471
indium (470) 470
polarization (462) 462
leakage current (454) 454
growth (451) 451
physics (437) 437
silicon substrates (437) 437
aln (435) 435
epitaxial growth (433) 433
layers (431) 431
passivation (425) 425
aluminium compounds (423) 423
electrons (423) 423
usage (423) 423
field-effect transistors (421) 421
semiconductor materials (399) 399
threshold voltage (399) 399
electric fields (392) 392
films (386) 386
electronics (385) 385
diodes (376) 376
gallium arsenide (375) 375
liquors (374) 374
nanoscience & nanotechnology (371) 371
annealing (370) 370
halbleiter mit grosser energielücke (369) 369
gallium (357) 357
heterojunctions (355) 355
etching (353) 353
aluminium (342) 342
light-emitting diodes (340) 340
optics (339) 339
efficiency (333) 333
crystallography (328) 328
deposition (326) 326
electron gas (322) 322
gallium nitrate (319) 319
research (318) 318
power generation (315) 315
condensed matter physics, superconductivity and superfluidity (309) 309
molecular-beam epitaxy (305) 305
buffer layers (298) 298
defects (293) 293
more...
Library Location Library Location
Library Location Library Location
X
Sort by Item Count (A-Z)
Filter by Count
Engineering & Comp. Sci. - Stacks (17) 17
Gerstein Science - Stacks (13) 13
Chemistry (A D Allen) - Stacks (2) 2
Collection Dvlpm't (Acquisitions) - Vendor file (2) 2
Engineering & Comp. Sci. - Reference (2) 2
Online Resources - Online (1) 1
Physics - Stacks (1) 1
UTL at Downsview - May be requested (1) 1
UofT at Mississauga - Stacks (1) 1
more...
Language Language
Language Language
X
Sort by Item Count (A-Z)
Filter by Count
English (11537) 11537
Chinese (89) 89
Japanese (43) 43
German (4) 4
Korean (4) 4
French (3) 3
Russian (3) 3
Polish (1) 1
Portuguese (1) 1
Spanish (1) 1
more...
Publication Date Publication Date
Click on a bar to filter by decade
Slide to change publication date range


Tribology International, ISSN 0301-679X, 02/2018, Volume 118, pp. 120 - 127
Ultralow wear nature of gallium nitride (GaN) has been revealed recently. The wear rate for GaN has a significant dependence on humidity, ranging from 9 × 10... 
Tribochemistry | Wear mechanism | GaN | Humidity | FRICTION | SAPPHIRE | THREADING DISLOCATIONS | ALUMINA | ENGINEERING, MECHANICAL | LIGHT-EMITTING-DIODES | SILICON-NITRIDE | FILMS | TRIBOCHEMICAL WEAR | Atomic force microscopy | Nitrides | Gallium nitrate | Aluminum compounds | X-ray spectroscopy | Tribology
Journal Article
Electronics Letters, ISSN 0013-5194, 07/2013, Volume 49, Issue 14, pp. 852 - 852
This research has shown the importance of free-standing GaN substrates with very low threading dislocation density when AlGaN/GaN HEMTs are grown by Ga-rich... 
Fracture mechanics | Semiconductor devices | Gallium nitrides | Leakage current | High electron mobility transistors | Aluminum gallium nitrides | Backing | Density
Journal Article
Tribology International, ISSN 0301-679X, 02/2018, Volume 118, p. 120
Ultralow wear nature of gallium nitride (GaN) has been revealed recently. The wear rate for GaN has a significant dependence on humidity, ranging from 9 x 10-9... 
Atomic force microscopy | Abrasion | Scanning electron microscopy | Adhesive wear | Gallium nitrides | Surface chemistry | Adhesion tests | Sliding | Wear mechanisms | Nitrogen | Aluminum oxide | Transmission electron microscopy | Wear rate | Abrasion resistance | Humidity | Image transmission | Wear particles | Debris | Tribology
Journal Article
Journal of physical chemistry C, ISSN 1932-7447, 09/2019, Volume 123, Issue 37, pp. 23214 - 23225
We report the successful preparation of polycrystalline gallium nitride (poly-GaN) layers by thermal atomic layer deposition (ALD) at low temperatures (375–425... 
THIN-FILMS | TRIMETHYLGALLIUM | LOW-TEMPERATURE GROWTH | AMMONIA | GAN FILMS | EPITAXIAL-GROWTH | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | LIGHT-EMITTING-DIODES | ADDUCT FORMATION | ALUMINUM NITRIDE | QUALITY GAN
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 11/2014, Volume 35, Issue 11, pp. 1127 - 1129
A GaN bulk acoustic wave resonator is presented in this letter, showing fundamental thickness-mode resonance at 2.18 GHz, with a quality factor (Q) of 655 and... 
Temperature measurement | GaN | Resonant frequency | TCF | HEMTs | MEMS resonator | Gallium nitride | Aluminum gallium nitride | Passivation | Thickness measurement | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
SCIENCE, ISSN 0036-8075, 09/2019, Volume 365, Issue 6460, pp. 1454 - 1454
Journal Article
Superlattices and Microstructures, ISSN 0749-6036, 09/2017, Volume 109, pp. 519 - 537
This paper furnishes a Comprehensive study about an emerging GaN HEMT technology suitable for RF and high power applications. It plays a vital role in Wireless... 
Polarization | Trap | 2DEG | HEMT | Field plate | PHYSICS, CONDENSED MATTER | ELECTRON-MOBILITY TRANSISTORS | MOS-HEMTS | BREAKDOWN-VOLTAGE | FIELD-EFFECT TRANSISTORS | LOW-LEAKAGE-CURRENT | SURFACE-PASSIVATION | III-NITRIDES | ALGAN/GAN HEMTS | GAN | PLATE | Surveys | Nitrides | Gallium nitrate | Power amplifiers | Satellite communications | Gallium arsenide | Aluminum compounds
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 08/2017, Volume 122, Issue 6
In this paper, we study theoretically the hot electron transport in two nitride semiconductor solid solutions, InxGa1−xN and InxAl1−xN, in the electric fields... 
Solid solutions | Indium gallium nitrides | Electron drift velocity | Gallium nitrides | Aluminum | Dependence | Velocity distribution | Electron transport
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2010, Volume 96, Issue 4, pp. 042105 - 042105-3
Strong plasmon resonances have been observed in the terahertz transmission spectra (1-5 THz) of large-area slit-grating-gate AlGaN/GaN-based... 
gallium compounds | FIELD-EFFECT TRANSISTOR | terahertz waves | DETECTORS | MODES | PHYSICS, APPLIED | aluminium compounds | high electron mobility transistors | plasmonics | wide band gap semiconductors | III-V semiconductors | INVERSION-LAYERS
Journal Article
Optics and Spectroscopy, ISSN 0030-400X, 7/2019, Volume 127, Issue 1, pp. 36 - 39
The reflection and attenuated total reflection spectra of aluminum and gallium nitride films doped with silicon on sapphire substrates with a buffer layer of... 
surface polaritons | aluminum and gallium nitrides | reflection and ATR spectroscopy | Physics | Optics, Lasers, Photonics, Optical Devices | VIBRATIONS | OPTICS | SPECTROSCOPY
Journal Article