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1. Full Text Molecular-beam epitaxy of GaSb on 6°-offcut (0 0 1) Si using a GaAs nucleation layer
by Rio Calvo, M and Rodriguez, J.-B and Cerutti, L and Ramonda, M and Patriarche, G and Tournié, E
Journal of crystal growth, ISSN 0022-0248, 01/2020, Volume 529, p. 125299
B1. Antimonides | A1. Atomic force microscopy | A1. Nucleation | A3. Molecular beam epitaxy | A1. X-ray diffraction | Nucleation | Gallium antimonides | Electron diffraction | Gallium arsenide | Epitaxy | Silicon substrates | Molecular beam epitaxy | High energy electrons | Islands | Physics - Materials Science | Condensed Matter | Materials Science | Micro and nanotechnologies | Microelectronics | Engineering Sciences | Physics
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2. Full Text Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD
by Boschi, F and Bosi, M and Berzina, T and Buffagni, E and Ferrari, C and Fornari, R
Journal of crystal growth, ISSN 0022-0248, 06/2016, Volume 443, pp. 25 - 30
A3. Atomic layer epitaxy | A3. Metalorganic Chemical Vapor Deposition | B1. Oxides | A1. Phase stability | B2. Semiconducting gallium compounds | Physical Sciences | Materials Science | Technology | Materials Science, Multidisciplinary | Crystallography | Physics | Science & Technology | Physics, Applied
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3. Full Text Atomic Layer Deposition of Metastable β‑Fe2O3 via Isomorphic Epitaxy for Photoassisted Water Oxidation
by Emery, Jonathan D and Schlepütz, Christian M and Guo, Peijun and Riha, Shannon C and Chang, Robert P. H and Martinson, Alex B. F
ACS applied materials & interfaces, ISSN 1944-8244, 12/2014, Volume 6, Issue 24, pp. 21894 - 21900
epitaxial stabilization | atomic layer deposition | PEC water oxidation | β-Fe | α-Fe | iron(III) oxide | Science & Technology - Other Topics | Materials Science | Nanoscience & Nanotechnology | Technology | Materials Science, Multidisciplinary | Science & Technology
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4. Full Text Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
by Shih, Huan-Yu and Lee, Wei-Hao and Kao, Wei-Chung and Chuang, Yung-Chuan and Lin, Ray-Ming and Lin, Hsin-Chih and Shiojiri, Makoto and Chen, Miin-Jang
Scientific reports, ISSN 2045-2322, 01/2017, Volume 7, Issue 1, pp. 39717 - 39717
Science & Technology - Other Topics | Multidisciplinary Sciences | Science & Technology | Films | Epitaxy | Migration | Crystallization | X-ray diffraction | Atomic layer epitaxy | Crystallinity | Electron microscopy | Transmission electron microscopy | Diffraction | Photovoltaic cells | Energy | Temperature effects
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5. Full Text Analysis of thin germanium-rich SiGe layers on Si(1 1 1) substrates grown by carbon-mediated epitaxy
by Genath, Hannah and Schmidt, Jan and Osten, H. Jörg
Journal of crystal growth, ISSN 0022-0248, 04/2020, Volume 535, p. 125569
B1. Silicon germanium | A3. Carbon-mediated epitaxy | B1. SiGe | A1. X-ray diffraction | A1. Virtual substrate | Physical Sciences | Materials Science | Technology | Materials Science, Multidisciplinary | Crystallography | Physics | Science & Technology | Physics, Applied | Thin films | Thickness | Atomic force microscopy | Silicon substrates | Germanium | Surface roughness | Epitaxial growth | Carbon | Silicon germanides
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6. Full Text Effective surface passivation of In0.53Ga0.47As(001) using molecular beam epitaxy and atomic layer deposited HfO2 – A comparative study
by Hong, M and Wan, H.W and Chang, P and Lin, T.D and Chang, Y.H and Lee, W.C and Pi, T.W and Kwo, J
Journal of crystal growth, ISSN 0022-0248, 11/2017, Volume 477, pp. 159 - 163
Interfacial trap density (Dit) | HfO2 | B2. InGaAs | A3. Molecular-beam-epitaxy (MBE) | B1. High-κ | B3. Metal oxide semiconductor capacitors (MOSCAPs) | Atomic-layer-deposition (ALD) | HfO | Interfacial trap density (D
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7. Full Text Effect of nitridation surface treatment on silicon (111) substrate for the growth of high quality single-crystalline GaN hetero-epitaxy layer by MOCVD
by Rahman, Mohd Nazri Abd and Yusuf, Yusnizam and Mansor, Mazwan and Shuhaimi, Ahmad
Applied surface science, ISSN 0169-4332, 01/2016, Volume 362, pp. 572 - 576
Crack-free | Silicon substrate | GaN | MOCVD | Nitridation | Physical Sciences | Chemistry | Materials Science | Technology | Materials Science, Coatings & Films | Physics, Condensed Matter | Chemistry, Physical | Physics | Science & Technology | Physics, Applied | Silicon | Liquors | Chemical vapor deposition | Epitaxy | Atomic force microscopy | Nitrides | Gallium nitrate | Analysis | Crystals | Structure | Single crystals | Gallium nitrides | Roughness | Silicon substrates | Atomic structure | Surface treatment | Aluminum nitride
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8. Full Text In situ monitoring of atomic layer epitaxy via optical ellipsometry
by Lyzwa, F and Marsik, P and Roddatis, V and Bernhard, C and Jungbauer, M and Moshnyaga, V
Journal of physics. D, Applied physics, ISSN 0022-3727, 3/2018, Volume 51, Issue 12
optical ellipsometry | Ruddlesden-Popper | atomic layer epitaxy | transmission electron microscopy | growth monitoring | in situ growth monitoring | Physical Sciences | Physics | Science & Technology | Physics, Applied | Physics - Materials Science
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9. Full Text Dynamic atomic layer epitaxy of InN on/in +c-GaN matrix: Effect of "in+N" coverage and capping timing by GaN layer on effective InN thickness
by Yoshikawa, Akihiko and Kusakabe, Kazuhide and Hashimoto, Naoki and Hwang, Eun-Sook and Itoi, Takaomi
Applied physics letters, ISSN 0003-6951, 01/2016, Volume 108, Issue 2, p. 22108
Thickness | Capping | Gallium nitrides | Molecular beam epitaxy | Bonding strength | Atomic layer epitaxy | Epitaxial growth | Critical temperature | Wells | MOLECULAR BEAM EPITAXY | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS | CRITICAL TEMPERATURE | ATOMS | INDIUM NITRIDES | THICKNESS | GALLIUM NITRIDES | LAYERS
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10. Full Text Mono- and few-layer nanocrystalline graphene grown on Al2O3(0001) by molecular beam epitaxy
by Oliveira, Myriano H and Schumann, Timo and Gargallo-Caballero, Raquel and Fromm, Felix and Seyller, Thomas and Ramsteiner, Manfred and Trampert, Achim and Geelhaar, Lutz and Lopes, Joao Marcelo J and Riechert, Henning
Carbon (New York), ISSN 0008-6223, 05/2013, Volume 56, pp. 339 - 350
Physical Sciences | Chemistry | Materials Science | Technology | Materials Science, Multidisciplinary | Chemistry, Physical | Science & Technology | Fullerenes and related materials; diamonds, graphite | Nanocrystalline materials | Exact sciences and technology | Materials science | Methods of deposition of films and coatings; film growth and epitaxy | Specific materials | Nanoscale materials and structures: fabrication and characterization | Molecular, atomic, ion, and chemical beam epitaxy | Physics | Cross-disciplinary physics: materials science; rheology | Degree of crystallinity | Nanocrystals | Graphene | X-rays | Molecular beam epitaxy | Evaporation | Carbon | Aluminum oxide
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11. Full Text AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
by Kao, Wei-Chung and Lee, Wei-Hao and Yi, Sheng-Han and Shen, Tsung-Han and Lin, Hsin-Chih and Chen, Miin-Jang
RSC advances, ISSN 2046-2069, 04/2019, Volume 9, Issue 22, pp. 12226 - 12231
Physical Sciences | Chemistry | Chemistry, Multidisciplinary | Science & Technology | Atomic force microscopy | Annealing | Crystallization | X-ray diffraction | Atomic layer epitaxy | Helium | Substrates | Thin films | Thickness | Transmission electron microscopy | Microscopy | Photovoltaic cells | Epitaxial growth | Argon | Aluminum nitride | Argon plasma | Low temperature
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12. Full Text Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
by Koehler, Andrew D and Nepal, Neeraj and Anderson, Travis J and Tadjer, Marko J and Hobart, Karl D and Eddy, Charles R and Kub, Francis J
IEEE electron device letters, ISSN 0741-3106, 09/2013, Volume 34, Issue 9, pp. 1115 - 1117
Atomic layer epitaxy (ALE) passivation | current collapse | GaN | high-electron-mobility transistor (HEMT) AlN | HEMTs | Logic gates | dynamic ON-resistance | III-V semiconductor materials | Gallium nitride | MODFETs | Aluminum gallium nitride | Passivation | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology | Exact sciences and technology | Microelectronic fabrication (materials and surfaces technology) | Electronics | Materials science | Applied sciences | Methods of deposition of films and coatings; film growth and epitaxy | Transistors | Physics | Cross-disciplinary physics: materials science; rheology | Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) | Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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13. Full Text Molecular beam epitaxy of SrTiO3 on GaAs(001): GaAs surface treatment and structural characterization of the oxide layer
by Louahadj, L and Bachelet, R and Regreny, P and Largeau, L and Dubourdieu, C and Saint-Girons, G
Thin solid films, ISSN 0040-6090, 07/2014, Volume 563, pp. 2 - 5
Perovskite | MBE | Heteroepitaxy | Oxides on semiconductor | Monolithic integration | Physical Sciences | Materials Science | Technology | Materials Science, Coatings & Films | Materials Science, Multidisciplinary | Physics, Condensed Matter | Physics | Science & Technology | Physics, Applied | Structure and morphology; thickness | Exact sciences and technology | Condensed matter: structure, mechanical and thermal properties | Materials science | Thin film structure and morphology | Theory and models of film growth | Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) | Other semiconductors | Methods of deposition of films and coatings; film growth and epitaxy | Specific materials | Molecular, atomic, ion, and chemical beam epitaxy | Cross-disciplinary physics: materials science; rheology | Gallium arsenides | Semiconductors | Gallium arsenide | Strontium titanates | Molecular beam epitaxy | Oxides | Crystallinity | Passivation | Condensed Matter
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14. Full Text Molecular beam epitaxy of high-quality CuI thin films on a low temperature grown buffer layer
by Inagaki, S and Nakamura, M and Aizawa, N and Peng, L. C and Yu, X. Z and Tokura, Y and Kawasaki, M
Applied physics letters, ISSN 0003-6951, 05/2020, Volume 116, Issue 19, p. 192105
Buffer layers | Atomic force microscopy | Crystal defects | Wide bandgap semiconductors | Photoluminescence | Substrates | Aluminum oxide | Thin films | Excitons | Emission spectra | Molecular beam epitaxy | Epitaxial growth | Atomic structure | Low temperature
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15. Full Text Epitaxial growth of SrCaTiO3 films on GaN by molecular beam epitaxy with a TiO2 buffer layer
by Jin, E. N and Lang, A. C and Hardy, M. T and Nepal, N and Katzer, D. S and Storm, D. F and Downey, B. P and Meyer, D. J
Journal of applied physics, ISSN 0021-8979, 06/2020, Volume 127, Issue 21, p. 214104
Physical Sciences | Physics | Science & Technology | Physics, Applied | Buffer layers | Atomic force microscopy | Electron diffraction | Gallium nitrides | High energy electrons | Substrates | Thin films | Diffraction patterns | Thickness | Microscopy | Morphology | Strontium titanates | Molecular beam epitaxy | Epitaxial growth | Titanium dioxide
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