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Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 01/2020, Volume 529, p. 125299
Journal Article
Nano Letters, ISSN 1530-6984, 09/2017, Volume 17, Issue 9, pp. 5595 - 5599
Journal Article
ACS Applied Materials & Interfaces, ISSN 1944-8244, 12/2014, Volume 6, Issue 24, pp. 21894 - 21900
We report the growth and photoelectrochemical (PEC) characterization of the uncommon bibyite phase of iron­(III) oxide (β-Fe2O3) epitaxially stabilized via... 
epitaxial stabilization | atomic layer deposition | PEC water oxidation | β-Fe | α-Fe | iron(III) oxide | TRANSFORMATION | MATERIALS SCIENCE, MULTIDISCIPLINARY | STATE | NANOSCIENCE & NANOTECHNOLOGY | ULTRATHIN HEMATITE FILMS | beta-Fe2O3 | PHOTOANODE | alpha-Fe2O3 | OXIDE THIN-FILMS | SUBSTRATE | GROWTH | HYDROGEN-PRODUCTION
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 08/2018, Volume 124, Issue 7
We synthesized thin films of the thermodynamically unstable infinite-layer compound Ca1–xSrxCuO2 by reactive molecular beam epitaxy and established... 
ELECTRON-DOPED SUPERCONDUCTIVITY | SINGLE-CRYSTAL | PHYSICS, APPLIED | SUPERCONDUCTING THIN-FILMS | CA-CU-O | TOTAL CROSS-SECTIONS | HIGH-PRESSURE SYNTHESIS | X-RAY-DIFFRACTION | T-C | ATOMIC-ABSORPTION SPECTROSCOPY | IN-SITU
Journal Article
Scientific Reports, ISSN 2045-2322, 01/2017, Volume 7, Issue 1, p. 39717
Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer... 
THIN-FILMS | CELLS | PLASMA | DEPOSITION | MULTIDISCIPLINARY SCIENCES | GROWTH | Films | Epitaxy | Migration | Crystallization | X-ray diffraction | Atomic layer epitaxy | Crystallinity | Electron microscopy | Transmission electron microscopy | Diffraction | Photovoltaic cells | Energy | Temperature effects
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 06/2016, Volume 443, pp. 25 - 30
Growth of gallium oxide thin films was carried out by Metalorganic Chemical Vapor Deposition (MOCVD) at different temperatures. Pure ε-phase epilayers of... 
A3. Atomic layer epitaxy | A3. Metalorganic Chemical Vapor Deposition | B1. Oxides | A1. Phase stability | B2. Semiconducting gallium compounds
Journal Article
Chemical Vapor Deposition, ISSN 0948-1907, 12/2014, Volume 20, Issue 10-11-12, pp. 332 - 344
Atomic layer deposition (ALD) is a thin film growth technique based on the repeated use of separate, saturating gas‐solid reactions. The principle of ALD has... 
ALD | ALE | History | ZnS | EL displays | ELECTROCHEMISTRY | PHYSICS, CONDENSED MATTER | MATERIALS SCIENCE, COATINGS & FILMS | Thin films | Names | Anniversaries | Inventors | Atomic layer epitaxy | New technology | Deposition | Fruits
Journal Article
Coordination Chemistry Reviews, ISSN 0010-8545, 01/2016, Volume 307, pp. 391 - 424
Journal Article
RSC ADVANCES, ISSN 2046-2069, 04/2019, Volume 9, Issue 22, pp. 12226 - 12231
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 03/2018, Volume 51, Issue 12
We report on the use of time-resolved optical ellipsometry to monitor the deposition of single atomic layers with subatomic sensitivity. Ruddlesden-Popper thin... 
optical ellipsometry | Ruddlesden-Popper | in situ growth monitoring | atomic layer epitaxy | transmission electron microscopy | SYSTEM | PHYSICS, APPLIED | REFLECTANCE-DIFFERENCE TECHNIQUE | FILMS | SRTIO3 | OXIDES | Physics - Materials Science
Journal Article