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Molecular-beam epitaxy of GaSb on 6°-offcut (0 0 1) Si using a GaAs nucleation layer
Journal of crystal growth, ISSN 0022-0248, 01/2020, Volume 529, p. 125299
B1. Antimonides | A1. Atomic force microscopy | A1. Nucleation | A3. Molecular beam epitaxy | A1. X-ray diffraction | Nucleation | Gallium antimonides | Electron diffraction | Gallium arsenide | Epitaxy | Silicon substrates | Molecular beam epitaxy | High energy electrons | Islands | Physics - Materials Science | Condensed Matter | Materials Science | Micro and nanotechnologies | Microelectronics | Engineering Sciences | Physics
Journal Article
Journal of crystal growth, ISSN 0022-0248, 06/2016, Volume 443, pp. 25 - 30
A3. Atomic layer epitaxy | A3. Metalorganic Chemical Vapor Deposition | B1. Oxides | A1. Phase stability | B2. Semiconducting gallium compounds | Physical Sciences | Materials Science | Technology | Materials Science, Multidisciplinary | Crystallography | Physics | Science & Technology | Physics, Applied
Journal Article
ACS applied materials & interfaces, ISSN 1944-8244, 12/2014, Volume 6, Issue 24, pp. 21894 - 21900
Journal Article
Scientific reports, ISSN 2045-2322, 01/2017, Volume 7, Issue 1, pp. 39717 - 39717
Science & Technology - Other Topics | Multidisciplinary Sciences | Science & Technology | Films | Epitaxy | Migration | Crystallization | X-ray diffraction | Atomic layer epitaxy | Crystallinity | Electron microscopy | Transmission electron microscopy | Diffraction | Photovoltaic cells | Energy | Temperature effects
Journal Article
Journal of crystal growth, ISSN 0022-0248, 04/2020, Volume 535, p. 125569
B1. Silicon germanium | A3. Carbon-mediated epitaxy | B1. SiGe | A1. X-ray diffraction | A1. Virtual substrate | Physical Sciences | Materials Science | Technology | Materials Science, Multidisciplinary | Crystallography | Physics | Science & Technology | Physics, Applied | Thin films | Thickness | Atomic force microscopy | Silicon substrates | Germanium | Surface roughness | Epitaxial growth | Carbon | Silicon germanides
Journal Article
Journal of crystal growth, ISSN 0022-0248, 11/2017, Volume 477, pp. 159 - 163
Journal Article
Applied surface science, ISSN 0169-4332, 01/2016, Volume 362, pp. 572 - 576
Crack-free | Silicon substrate | GaN | MOCVD | Nitridation | Physical Sciences | Chemistry | Materials Science | Technology | Materials Science, Coatings & Films | Physics, Condensed Matter | Chemistry, Physical | Physics | Science & Technology | Physics, Applied | Silicon | Liquors | Chemical vapor deposition | Epitaxy | Atomic force microscopy | Nitrides | Gallium nitrate | Analysis | Crystals | Structure | Single crystals | Gallium nitrides | Roughness | Silicon substrates | Atomic structure | Surface treatment | Aluminum nitride
Journal Article
Journal of physics. D, Applied physics, ISSN 0022-3727, 3/2018, Volume 51, Issue 12
Journal Article
Applied physics letters, ISSN 0003-6951, 01/2016, Volume 108, Issue 2, p. 22108
Thickness | Capping | Gallium nitrides | Molecular beam epitaxy | Bonding strength | Atomic layer epitaxy | Epitaxial growth | Critical temperature | Wells | MOLECULAR BEAM EPITAXY | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS | CRITICAL TEMPERATURE | ATOMS | INDIUM NITRIDES | THICKNESS | GALLIUM NITRIDES | LAYERS
Journal Article
Carbon (New York), ISSN 0008-6223, 05/2013, Volume 56, pp. 339 - 350
Physical Sciences | Chemistry | Materials Science | Technology | Materials Science, Multidisciplinary | Chemistry, Physical | Science & Technology | Fullerenes and related materials; diamonds, graphite | Nanocrystalline materials | Exact sciences and technology | Materials science | Methods of deposition of films and coatings; film growth and epitaxy | Specific materials | Nanoscale materials and structures: fabrication and characterization | Molecular, atomic, ion, and chemical beam epitaxy | Physics | Cross-disciplinary physics: materials science; rheology | Degree of crystallinity | Nanocrystals | Graphene | X-rays | Molecular beam epitaxy | Evaporation | Carbon | Aluminum oxide
Journal Article
RSC advances, ISSN 2046-2069, 04/2019, Volume 9, Issue 22, pp. 12226 - 12231
Physical Sciences | Chemistry | Chemistry, Multidisciplinary | Science & Technology | Atomic force microscopy | Annealing | Crystallization | X-ray diffraction | Atomic layer epitaxy | Helium | Substrates | Thin films | Thickness | Transmission electron microscopy | Microscopy | Photovoltaic cells | Epitaxial growth | Argon | Aluminum nitride | Argon plasma | Low temperature
Journal Article
IEEE electron device letters, ISSN 0741-3106, 09/2013, Volume 34, Issue 9, pp. 1115 - 1117
Atomic layer epitaxy (ALE) passivation | current collapse | GaN | high-electron-mobility transistor (HEMT) AlN | HEMTs | Logic gates | dynamic ON-resistance | III-V semiconductor materials | Gallium nitride | MODFETs | Aluminum gallium nitride | Passivation | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology | Exact sciences and technology | Microelectronic fabrication (materials and surfaces technology) | Electronics | Materials science | Applied sciences | Methods of deposition of films and coatings; film growth and epitaxy | Transistors | Physics | Cross-disciplinary physics: materials science; rheology | Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) | Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Journal Article
Thin solid films, ISSN 0040-6090, 07/2014, Volume 563, pp. 2 - 5
Perovskite | MBE | Heteroepitaxy | Oxides on semiconductor | Monolithic integration | Physical Sciences | Materials Science | Technology | Materials Science, Coatings & Films | Materials Science, Multidisciplinary | Physics, Condensed Matter | Physics | Science & Technology | Physics, Applied | Structure and morphology; thickness | Exact sciences and technology | Condensed matter: structure, mechanical and thermal properties | Materials science | Thin film structure and morphology | Theory and models of film growth | Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) | Other semiconductors | Methods of deposition of films and coatings; film growth and epitaxy | Specific materials | Molecular, atomic, ion, and chemical beam epitaxy | Cross-disciplinary physics: materials science; rheology | Gallium arsenides | Semiconductors | Gallium arsenide | Strontium titanates | Molecular beam epitaxy | Oxides | Crystallinity | Passivation | Condensed Matter
Journal Article
Applied physics letters, ISSN 0003-6951, 05/2020, Volume 116, Issue 19, p. 192105
Journal Article
Journal of applied physics, ISSN 0021-8979, 06/2020, Volume 127, Issue 21, p. 214104
Physical Sciences | Physics | Science & Technology | Physics, Applied | Buffer layers | Atomic force microscopy | Electron diffraction | Gallium nitrides | High energy electrons | Substrates | Thin films | Diffraction patterns | Thickness | Microscopy | Morphology | Strontium titanates | Molecular beam epitaxy | Epitaxial growth | Titanium dioxide
Journal Article