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1. Full Text van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates
by Shi, Yumeng and Zhou, Wu and Lu, Ang-Yu and Fang, Wenjing and Lee, Yi-Hsien and Hsu, Allen Long and Kim, Soo Min and Kim, Ki Kang and Yang, Hui Ying and Li, Lain-Jong and Idrobo, Juan-Carlos and Kong, Jing and Shared Research Equipment Collaborative Research Center and Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Nano Letters, ISSN 1530-6984, 06/2012, Volume 12, Issue 6, pp. 2784 - 2791
We present a method for synthesizing MoS2/Graphene hybrid heterostructures with a growth template of graphene-covered Cu foil. Compared to other recent... 
LARGE-AREA | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | PHOTOLUMINESCENCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | HIGH-QUALITY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | Chemical vapor deposition | THERMAL-DECOMPOSITION | CHEMISTRY, MULTIDISCIPLINARY | graphene | HYDROTHERMAL SYNTHESIS | PHASE | PHOTOCATALYTIC H-2 EVOLUTION | van der Waals epitaxy | ATOMIC LAYERS | molybdenum disulfide | MONOLAYER | STEM imaging | Molybdenum - chemistry | Particle Size | Nanostructures - ultrastructure | Macromolecular Substances - chemistry | Molecular Conformation | Surface Properties | Nanostructures - chemistry | Materials Testing | Graphite - chemistry | Static Electricity | Crystallization - methods | Sulfur - chemistry | CHEMICAL VAPOR DEPOSITION | PRECURSOR | ANNEALING | MOLYBDENUM | MoS2 | EELS | MATERIALS SCIENCE | STEM | EPITAXY | SOLVENTS | SYNTHESIS | PYROLYSIS | CATALYSTS
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2. Full Text Molecular-beam epitaxy of GaSb on 6°-offcut (0 0 1) Si using a GaAs nucleation layer
by Rio Calvo, M and Rodriguez, J.-B and Cerutti, L and Ramonda, M and Patriarche, G and Tournié, E
Journal of Crystal Growth, ISSN 0022-0248, 01/2020, Volume 529, p. 125299
•The growth of GaSb using a GaAs nucleation layer on 6° off-cut (001) Si is studied.•AFM and TEM reveal the formation of a quasi-2D GaAs nucleation... 
B1. Antimonides | A1. Atomic force microscopy | A1. Nucleation | A3. Molecular beam epitaxy | A1. X-ray diffraction | Nucleation | Gallium antimonides | Electron diffraction | Gallium arsenide | Epitaxy | Silicon substrates | Molecular beam epitaxy | High energy electrons | Islands | Physics - Materials Science | Condensed Matter | Materials Science | Micro and nanotechnologies | Microelectronics | Engineering Sciences | Physics
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3. Full Text Layer-by-Layer Epitaxial Growth of Scalable WSe2 on Sapphire by Molecular Beam Epitaxy
by Nakano, Masaki and Wang, Yue and Kashiwabara, Yuta and Matsuoka, Hideki and Iwasa, Yoshihiro
Nano Letters, ISSN 1530-6984, 09/2017, Volume 17, Issue 9, pp. 5595 - 5599
Molecular beam epitaxy (MBE) provides a simple but powerful way to synthesize large-area high-quality thin films and heterostructures of a wide variety of... 
ambipolar transistor | Molecular beam epitaxy | WSe | transition-metal dichalcogenide | 2D materials | LARGE-AREA | WSe2 | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | SPIN | INSULATOR | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | TRANSITION-METAL DICHALCOGENIDES | FILMS | MOS2 ATOMIC LAYERS | 2-DIMENSIONAL MATERIAL | HALL | Physics - Materials Science
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4. Full Text Effective surface passivation of In0.53Ga0.47As(001) using molecular beam epitaxy and atomic layer deposited HfO2 – A comparative study
by Hong, M and Wan, H.W and Chang, P and Lin, T.D and Chang, Y.H and Lee, W.C and Pi, T.W and Kwo, J
Journal of Crystal Growth, ISSN 0022-0248, 11/2017, Volume 477, pp. 159 - 163
•Both MBE- and ALD high-k HfO2 in-situ on freshly MBE grown p- and n-InGaAs(001).•Both exhibited excellent C-Vs with true inversion and low leakage... 
Interfacial trap density (Dit) | HfO2 | B2. InGaAs | A3. Molecular-beam-epitaxy (MBE) | B1. High-κ | B3. Metal oxide semiconductor capacitors (MOSCAPs) | Atomic-layer-deposition (ALD) | HfO | Interfacial trap density (D | PHYSICS, APPLIED | OXIDE | MATERIALS SCIENCE, MULTIDISCIPLINARY | GATE | CRYSTALLOGRAPHY | InGaAs | Interfacial trap density (D-it) | DIELECTRICS | High-kappa | Metal oxide semiconductor capacitors (MOSCAPs) | Molecular-beam-epitaxy (MBE) | DEVICES | TECHNOLOGY
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5. Full Text Atomic Layer Deposition of Metastable β‑Fe2O3 via Isomorphic Epitaxy for Photoassisted Water Oxidation
by Emery, Jonathan D and Schlepütz, Christian M and Guo, Peijun and Riha, Shannon C and Chang, Robert P. H and Martinson, Alex B. F
ACS Applied Materials & Interfaces, ISSN 1944-8244, 12/2014, Volume 6, Issue 24, pp. 21894 - 21900
We report the growth and photoelectrochemical (PEC) characterization of the uncommon bibyite phase of iron­(III) oxide (β-Fe2O3) epitaxially stabilized via... 
epitaxial stabilization | atomic layer deposition | PEC water oxidation | β-Fe | α-Fe | iron(III) oxide | TRANSFORMATION | MATERIALS SCIENCE, MULTIDISCIPLINARY | STATE | NANOSCIENCE & NANOTECHNOLOGY | ULTRATHIN HEMATITE FILMS | beta-Fe2O3 | PHOTOANODE | alpha-Fe2O3 | OXIDE THIN-FILMS | SUBSTRATE | GROWTH | HYDROGEN-PRODUCTION
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6. Full Text Infinite-layer phase formation in the Ca1–xSrxCuO2 system by reactive molecular beam epitaxy
by Krockenberger, Yoshiharu and Ikeda, Ai and Kumakura, Kazuhide and Yamamoto, Hideki
Journal of Applied Physics, ISSN 0021-8979, 08/2018, Volume 124, Issue 7
We synthesized thin films of the thermodynamically unstable infinite-layer compound Ca1–xSrxCuO2 by reactive molecular beam epitaxy and established... 
ELECTRON-DOPED SUPERCONDUCTIVITY | SINGLE-CRYSTAL | PHYSICS, APPLIED | SUPERCONDUCTING THIN-FILMS | CA-CU-O | TOTAL CROSS-SECTIONS | HIGH-PRESSURE SYNTHESIS | X-RAY-DIFFRACTION | T-C | ATOMIC-ABSORPTION SPECTROSCOPY | IN-SITU
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7. Full Text Effect of nitridation surface treatment on silicon (111) substrate for the growth of high quality single-crystalline GaN hetero-epitaxy layer by MOCVD
by Rahman, Mohd Nazri Abd and Yusuf, Yusnizam and Mansor, Mazwan and Shuhaimi, Ahmad
Applied Surface Science, ISSN 0169-4332, 01/2016, Volume 362, pp. 572 - 576
•High quality single-crystalline GaN epilayer was grown on Si(111) substrates by MOCVD.•A smooth surface of GaN epilayer has successfully grown on Si(111)... 
Crack-free | Silicon substrate | GaN | MOCVD | Nitridation | SAPPHIRE | PHYSICS, CONDENSED MATTER | SI SUBSTRATE | PHYSICS, APPLIED | CRACK-FREE GAN | MOVPE GROWTH | CHEMISTRY, PHYSICAL | EPITAXY | HETEROSTRUCTURE | MATERIALS SCIENCE, COATINGS & FILMS | Silicon | Liquors | Chemical vapor deposition | Epitaxy | Atomic force microscopy | Nitrides | Gallium nitrate | Analysis | Crystals | Structure | Single crystals | Gallium nitrides | Roughness | Silicon substrates | Atomic structure | Surface treatment | Aluminum nitride
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8. Full Text Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
by Shih, Huan-Yu and Lee, Wei-Hao and Kao, Wei-Chung and Chuang, Yung-Chuan and Lin, Ray-Ming and Lin, Hsin-Chih and Shiojiri, Makoto and Chen, Miin-Jang
Scientific Reports, ISSN 2045-2322, 01/2017, Volume 7, Issue 1, p. 39717
Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer... 
THIN-FILMS | CELLS | PLASMA | DEPOSITION | MULTIDISCIPLINARY SCIENCES | GROWTH | Films | Epitaxy | Migration | Crystallization | X-ray diffraction | Atomic layer epitaxy | Crystallinity | Electron microscopy | Transmission electron microscopy | Diffraction | Photovoltaic cells | Energy | Temperature effects
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9. Full Text Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD
by Boschi, F and Bosi, M and Berzina, T and Buffagni, E and Ferrari, C and Fornari, R
Journal of Crystal Growth, ISSN 0022-0248, 06/2016, Volume 443, pp. 25 - 30
Growth of gallium oxide thin films was carried out by Metalorganic Chemical Vapor Deposition (MOCVD) at different temperatures. Pure ε-phase epilayers of... 
A3. Atomic layer epitaxy | A3. Metalorganic Chemical Vapor Deposition | B1. Oxides | A1. Phase stability | B2. Semiconducting gallium compounds
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10. Full Text A Short History of Atomic Layer Deposition: Tuomo Suntola's Atomic Layer Epitaxy
by Puurunen, Riikka L
Chemical Vapor Deposition, ISSN 0948-1907, 12/2014, Volume 20, Issue 10-11-12, pp. 332 - 344
Atomic layer deposition (ALD) is a thin film growth technique based on the repeated use of separate, saturating gas‐solid reactions. The principle of ALD has... 
ALD | ALE | History | ZnS | EL displays | ELECTROCHEMISTRY | PHYSICS, CONDENSED MATTER | MATERIALS SCIENCE, COATINGS & FILMS | Thin films | Names | Anniversaries | Inventors | Atomic layer epitaxy | New technology | Deposition | Fruits
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11. Full Text Formation of oriented and patterned films of metal–organic frameworks by liquid phase epitaxy: A review
by Zhuang, Jin-Liang and Terfort, Andreas and Wöll, Christof
Coordination Chemistry Reviews, ISSN 0010-8545, 01/2016, Volume 307, pp. 391 - 424
•Metal–organic frameworks (MOFs) are one of the most investigated class of substances.•More and more new properties are found, such as electrical conductivity... 
Metal–organic framework | Surface growth | Patterning | Self-assembled monolayers | Oriented | Metal-organic framework | POST-SYNTHETIC MODIFICATION | POROUS COORDINATION POLYMERS | QUARTZ-CRYSTAL MICROBALANCE | CHEMISTRY, INORGANIC & NUCLEAR | SINGLE-CRYSTALS | ATOMIC-FORCE MICROSCOPY | MOLECULAR-SIEVE MEMBRANE | X-RAY | BY-LAYER GROWTH | MOF THIN-FILMS | Epitaxy | Electrical conductivity | Electric properties | Thin films | Dielectric films | Analysis
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12. Full Text AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
by Kao, Wei-Chung and Lee, Wei-Hao and Yi, Sheng-Han and Shen, Tsung-Han and Lin, Hsin-Chih and Chen, Miin-Jang
RSC ADVANCES, ISSN 2046-2069, 04/2019, Volume 9, Issue 22, pp. 12226 - 12231
AlN thin films were epitaxially grown on a 4H-SiC substrate via atomic layer deposition (ALD) along with atomic layer annealing (ALA). By applying the... 
ALUMINUM NITRIDE FILM | THIN-FILMS | GAN | AIN | CHEMISTRY, MULTIDISCIPLINARY | MICROSTRUCTURE | THICKNESS | Atomic force microscopy | Annealing | Crystallization | X-ray diffraction | Atomic layer epitaxy | Helium | Substrates | Thin films | Thickness | Transmission electron microscopy | Atomic layer deposition | Microscopy | Photovoltaic cells | Epitaxial growth | Argon | Aluminum nitride | Argon plasma | Low temperature
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13. Full Text In situ monitoring of atomic layer epitaxy via optical ellipsometry
by Lyzwa, F and Marsik, P and Roddatis, V and Bernhard, C and Jungbauer, M and Moshnyaga, V
Journal of Physics D: Applied Physics, ISSN 0022-3727, 03/2018, Volume 51, Issue 12
We report on the use of time-resolved optical ellipsometry to monitor the deposition of single atomic layers with subatomic sensitivity. Ruddlesden-Popper thin... 
optical ellipsometry | Ruddlesden-Popper | in situ growth monitoring | atomic layer epitaxy | transmission electron microscopy | SYSTEM | PHYSICS, APPLIED | REFLECTANCE-DIFFERENCE TECHNIQUE | FILMS | SRTIO3 | OXIDES | Physics - Materials Science
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