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IEEE Transactions on Electron Devices, ISSN 0018-9383, 09/2002, Volume 49, Issue 9, pp. 1628 - 1631
Journal Article
Proceedings of SPIE, ISSN 0277-786X, 06/2004, Volume 5352, Issue 1, pp. 382 - 393
Superfast high current switching of a GaAs-based JBT in the avalanche mode has been achieved experimentally for the first time. A very fast reduction in the... 
Gunn domains | Avalanche multiplication | GaAs | Microwave switch | Bipolar transistor
Conference Proceeding
AIP Conference Proceedings, ISSN 0094-243X, 02/2019, Volume 2072, Issue 1
A modified 3 moment approach is adopted to determine the junction depth of ion-implanted p++-n junction Si based high-power MMW-device. This study is capable... 
ion-energy | ion-implantation technique | three-moment approach | range | Avalanche carrier generation | junction-depth | background doping concentration | Transit time phenomena | negative resistance profile | Military applications | Transit time | Millimeter waves | Dependence
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 05/2000, Volume 47, Issue 5, pp. 910 - 914
It is known that both pure electron and pure hole injection into thin GaAs multiplication regions gives rise to avalanche multiplication with noise lower than... 
Avalanche photodiodes | Avalanche multiplication | Impact ionization | APD | GaAs | Avalanche noise | avalanche multiplication | avalanche noise | PHYSICS, APPLIED | MULTIPLICATION NOISE | CAVITY SEPARATE ABSORPTION | ENGINEERING, ELECTRICAL & ELECTRONIC | DEAD SPACE | impact ionization | GAIN-BANDWIDTH PRODUCT | PHOTODIODES | DIODES | HIGH-SPEED | Gallium arsenide | Noise | Research
Journal Article
Optics and Spectroscopy, ISSN 0030-400X, 4/2018, Volume 124, Issue 4, pp. 509 - 515
A new and efficient mechanism of nonlinear photoexcitation of a transparent crystal with deep impurity centers is proposed. It is hypothesized that the energy... 
Physics | Optics, Lasers, Photonics, Optical Devices | FIBER | PHOSPHOR | SPECTROSCOPY | PHOTON-AVALANCHE | HETEROSTRUCTURES | GAP | DOPED QUANTUM-WELLS | AVALANCHE UP-CONVERSION | OPTICS | NONLINEAR-OPTICAL ABSORPTION | PHOTOTRANSITIONS | FREE-ELECTRONS | Light | Current carriers | Conduction bands | Electron states | Energy gap | Impurities | Photon absorption | Valence band | Photoexcitation
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 08/2003, Volume 94, Issue 3, pp. 1728 - 1737
We present a comprehensive experimental study of hot-carrier trap generation and charging effects in high-kappa dielectrics using field-effect transistors... 
HOLE | PHYSICS, APPLIED | DEFECT GENERATION | SI-SIO2 INTERFACE | ELECTRONS | GATE DIELECTRIC STACKS | AVALANCHE INJECTION | POSITIVE CHARGE | SILICON DIOXIDE | SIO2 | LAYERS | Research | Charge transfer | Field-effect transistors | Hafnium | Electric properties | Aluminum oxide
Journal Article
Journal Article
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 12/2003, Volume 24, Issue 12, pp. 736 - 738
Journal Article
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), ISSN 1088-9299, 09/2016, Volume 2016-, pp. 17 - 20
High-current pulsed stress measurements are performed on SiGe HBTs to characterize the damage behavior and create a comprehensive physics-based TCAD damage... 
Annealing | reverse EB stress | impact-ionization | Hot carriers | degradation | mixed-mode stress | Temperature measurement | bipolar transistor | high-current damage | Spontaneous emission | Heating | SiGe HBT | avalanche generation | hot-carrier damage | Reliability | Kinetic energy | Auger recombination | reliability | High-Current damage
Conference Proceeding
Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013, 2013, Volume 2, pp. 68 - 71
Conference Proceeding
IEEE Sensors Journal, ISSN 1530-437X, 11/2010, Volume 10, Issue 11, pp. 1682 - 1690
We report on the breakdown characteristics of a single-photon avalanche diode structure fabricated in a 0.5 μm single-well CMOS process. This paper features... 
Electric breakdown | single photon | Avalanche breakdown | Educational institutions | CMOS process | Diodes | Pulse generation | Breakdown voltage | Poisson equations | avalanche photodiodes | Charge carrier processes | CMOS integrated circuits | integrated circuit modeling
Journal Article
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), ISSN 1088-9299, 09/2013, pp. 179 - 182
We study the accumulated degradation of SiGe HBTs under time-dependent mixed-mode stress using a new physics-based TCAD degradation model that simulates hot... 
reliability | Hot carriers | Predictive models | Calibration | Stress | mixed-mode stress | Degradation | bipolar transistor | Current measurement | SiGe HBT | avalanche generation | impactionization | Mathematical model | hot carriers | degradation
Conference Proceeding
Nuclear Inst. and Methods in Physics Research, A, ISSN 0168-9002, 2011, Volume 628, Issue 1, pp. 389 - 392
Journal Article
LITHUANIAN JOURNAL OF PHYSICS, ISSN 1648-8504, 2014, Volume 54, Issue 2, pp. 80 - 88
The plasma formation and extraction processes in silicon n(+)np(+), p(+)pn(+), and Schottky TRAPATT (TRApped Plasma Avalanche Triggered Transit) diodes were... 
minority carrier storage | FRONTS | diffusion | PHYSICS, MULTIDISCIPLINARY | simulation | IMPACT IONIZATION | POWER | GENERATION | avalanche diodes | OSCILLATIONS | EFFICIENCY | BREAKDOWN
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2017, Volume 64, Issue 3, pp. 1146 - 1152
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 06/2018, Volume 65, Issue 6, pp. 2430 - 2438
Journal Article
Optics Express, ISSN 1094-4087, 12/2007, Volume 15, Issue 25, pp. 16604 - 16644
Several kinds of nonlinear optical effects have been observed in recent years using silicon waveguides, and their device applications are attracting... 
40 GB/S DATA | CORRELATED PHOTON PAIRS | 3RD-HARMONIC GENERATION | 2-PHOTON ABSORPTION | SELF-PHASE-MODULATION | DISPERSION-SHIFTED FIBER | SUPERCONTINUUM GENERATION | STIMULATED RAMAN-SCATTERING | OPTICS | SI AVALANCHE PHOTODIODE | MU-M WAVELENGTH
Journal Article
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