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Optics Express, ISSN 1094-4087, 2015, Volume 23, Issue 10, pp. 13554 - 13561
Ga2O3 photodetectors with interdigitated electrodes have been designed and fabricated, and the Ga2O3 area exposed to illumination acts as the active layer of... 
AVALANCHE PHOTODIODES | UV-DETECTOR | FILMS | ULTRAVIOLET PHOTODETECTOR | MOLECULAR-BEAM EPITAXY | HIGH-DETECTIVITY | GROWTH | OPTICS
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2007, Volume 54, Issue 1, pp. 11 - 16
Journal Article
Small, ISSN 1613-6810, 09/2019, Volume 15, Issue 38, pp. 1970203 - n/a
In article number 1805352, Euyheon Hwang, Sungjoo Lee, and co‐workers demonstrate black phosphorus‐based avalanche photodetectors integrated with... 
avalanche photodetectors | Au nanoparticles | black phosphorus | plasmonic effects | Nanoparticles | Gold | Multilayers | Multiplication | Noise sensitivity | Power consumption | Photometers | Optical communication | Phosphorus | Electron avalanche | Sensitivity enhancement | Electric fields
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2016, Volume 109, Issue 4, p. 43502
Journal Article
Optics Communications, ISSN 0030-4018, 09/2016, Volume 374, pp. 114 - 118
An In0.53Ga0.47As/InP avalanche photodiodes (APD) structure with double multiplication layers and double charge layers has been proposed. The calculated... 
Mean gain | In0.53Ga0.47As/InP avalanche photodiodes (APD) | Excess noise factor | Dead space | Ga | In | As/InP avalanche photodiodes (APD) | NOISE CHARACTERISTICS | IMPACT-IONIZATION | DIODES | OPTICS | GAIN | Noise control | Analysis | Magnetism | Multiplication | Mathematical analysis | Avalanches | Indium phosphides | Charge | Photodiodes | Noise factor | Gain
Journal Article
Sensors & Actuators: A. Physical, ISSN 0924-4247, 04/2015, Volume 224, pp. 24 - 29
•The properties of a Ga2O3/CIGS heterojunction photodiode were investigated.•Photocurrent multiplication was observed in Ga2O3/CIGS photosensors.•The oxygen... 
Dark current | Avalanche multiplication | Image sensor | CIGS | SOLAR-CELLS | MOBILITY | WORK FUNCTION | ELECTRICAL-PROPERTIES | OPTICAL-PROPERTIES | ENGINEERING, ELECTRICAL & ELECTRONIC | INSTRUMENTS & INSTRUMENTATION | CONDUCTION-BAND OFFSET | OXIDE THIN-FILMS | EFFICIENCY | AMORPHOUS SELENIUM | CUINSE2
Journal Article
Nano Letters, ISSN 1530-6984, 12/2012, Volume 12, Issue 12, pp. 6448 - 6452
Journal Article
Nuclear Inst. and Methods in Physics Research, A, ISSN 0168-9002, 09/2019, Volume 937, pp. 53 - 58
Journal Article
Advanced Optical Materials, ISSN 2195-1071, 06/2019, Volume 7, Issue 11, pp. 1900107 - n/a
Demonstrated are antimony‐based (Sb‐based) separate absorption and multiplication avalanche photodiodes (SAM‐APDs) for X‐ray and gamma‐ray detection, which are... 
gamma rays | SAM‐APDs | avalanche photodiodes | X‐ray detection | semiconductor heterostructures | SAM-APDs | X-ray detection | Multiplication | Gallium antimonides | Energy measurement | Absorbers | Antimony | Photons | Minority carriers | Photodiodes | Absorption | Energy | Energy resolution | Linearity | Avalanche diodes | Electric fields
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 04/2019, Volume 66, Issue 4, pp. 1810 - 1814
Journal Article
Optics Communications, ISSN 0030-4018, 07/2015, Volume 346, pp. 167 - 171
We present an analytic approach to model the velocity enhancement in high field devices with sub-100-nm multiplication regions. In doing so, we consider the... 
Impact ionization of carriers | Avalanche photodiode (APD) | NOISE CHARACTERISTICS | IMPACT-IONIZATION | OPTICS | IN0.52AL0.48AS | GAAS AVALANCHE PHOTODIODES | GAIN | Ionization | Gallium arsenide | Analysis
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2017, Volume 64, Issue 1, pp. 264 - 270
The charge carrier contributions to impact ionization and avalanche multiplication are analyzed in detail. A closed-form analytical model is derived for the... 
Electric breakdown | Charge carriers | Avalanche breakdown | Impact ionization | Silicon | avalanche diodes | multiplication | P-i-n diodes | Current density | EWI-27721 | impact ionization | Multiplication | IR-103456 | PHYSICS, APPLIED | ELECTRIC-FIELD | SILICON | RESURF | P-N-JUNCTIONS | IONIZATION RATES | ENGINEERING, ELECTRICAL & ELECTRONIC | INJECTION | DEVICES | DEGRADATION | Diodes | Mathematical models
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 2014, Volume 115, Issue 6, p. 64507
The temperature dependence of avalanche multiplication and breakdown voltage in Al0.52In0.48P, lattice-matched to GaAs, has been measured on a series of... 
IMPACT IONIZATION COEFFICIENTS | PHYSICS, APPLIED | EXCESS NOISE | INAS | SEMICONDUCTORS | PHOTODIODES | INP | DIODES | ALXGA1-XAS | GAAS | ALLOY SCATTERING | Lattice matching | Temperature dependence | Electric potential | Multiplication | Temperature | Ionization | Avalanche diodes | Breakdown | Ionization coefficients | Coefficient of variation | Repair & maintenance
Journal Article
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