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IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, 03/2018, Volume 24, Issue 2, pp. 1 - 11
Silicon photonics is considered as one of the promising technologies for high-speed optical fiber communications. Among various silicon photonic devices,... 
germanium on silicon | Annealing | Absorption | Avalanche photodiodes | Silicon | Optical fiber communication | fiber communications | Optical fiber devices | Avalanche photodiode | silicon photonics | Electric fields | Fiber communications | Silicon photonics | Germanium on silicon
Journal Article
IEEE Photonics Technology Letters, ISSN 1041-1135, 06/2018, Volume 30, Issue 11, pp. 1048 - 1051
We report avalanche photodiodes (APDs) fabricated from the digital alloy Al 0.8 In 0.2 As 0.23 Sb 0.77 (lattice-matched to GaSb). The APDs exhibit high... 
photodetectors | PIN photodiodes | Digital alloys | optoelectronic devices | Avalanche photodiodes | Capacitance | Photoconductivity | Current density | Physics | PHYSICS, APPLIED | MULTIPLICATION NOISE | V COMPOUND SEMICONDUCTORS | OPTICS | OHMIC CONTACTS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal of Lightwave Technology, ISSN 0733-8724, 01/2016, Volume 34, Issue 2, pp. 278 - 285
Journal Article
Applied Physics Letters, ISSN 0003-6951, 02/2016, Volume 108, Issue 8
We report low-noise avalanche gain from photodiodes composed of a previously uncharacterized alloy, Al0.7In0.3As0.3Sb0.7, grown on GaSb. The bandgap energy and... 
Energy gap | Avalanche diodes | Silicon | Noise factor | Photodiodes | Cut off wavelength | Substrates
Journal Article
Journal of Lightwave Technology, ISSN 0733-8724, 09/2018, Volume 36, Issue 17, pp. 3580 - 3585
Journal Article
Applied Physics Letters, ISSN 0003-6951, 02/2016, Volume 108, Issue 8
Over 30 years ago, Capasso and co-workers [IEEE Trans. Electron Devices 30, 381 (1982)] proposed the staircase avalanche photodetector (APD) as a solid-state... 
Lattice matching | Conduction bands | Multiplication | Gallium antimonides | Avalanche diodes | Dynodes | Photomultiplier tubes | Electron avalanche | Photodiodes | Offsets | Operating temperature
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2017, Volume 64, Issue 3, pp. 1146 - 1152
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 10/2019, Volume 40, Issue 10, pp. 1591 - 1594
In this letter, high-uniformity 8 × 8 arrays of 4H-SiC ultraviolet (UV) avalanche photodiode (APD) are reported. In order to improve the detectivity, large... 
Temperature measurement | Breakdown voltage | avalanche photodiode | array | Avalanche photodiodes | Dark current | Avalanche breakdown | Leakage currents | Ultraviolet | 4H-SiC | Standards
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2015, Volume 62, Issue 1, pp. 128 - 135
We report the demonstration of a Ge 0.95 Sn 0.05 on silicon (Ge 0.95 Sn 0.05 /Si) avalanche photodiode (APD) having a separate-absorption-charge-multiplication... 
Temperature dependence | Avalanche photodiode (APD) | germanium-tin | Absorption | Microscopy | Avalanche photodiodes | Tin | Silicon | near-infrared (NIR) photodetection | GAIN-BANDWIDTH PRODUCT | PHYSICS, APPLIED | PHOTODETECTORS | ENGINEERING, ELECTRICAL & ELECTRONIC | Tin compounds | Atomic force microscopy | Germanium | Usage | Electron microscopy | Optical properties
Journal Article
IEEE Photonics Technology Letters, ISSN 1041-1135, 08/2014, Volume 26, Issue 15, pp. 1511 - 1514
We present an avalanche photodiode (APD) with separate absorption and multiplication zone. The APD is fabricated in a 0.35-μm CMOS process using an epitaxial... 
Optical fibers | Optical device fabrication | Bandwidth | Optical variables measurement | Optical receivers | Silicon | Optical sensors | PHYSICS, APPLIED | photodiodes | Avalanche photodiodes | photo detectors | CMOS technology | OPTICS | responsivity bandwidth product | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2015, Volume 106, Issue 3, p. 31115
Traditionally, photodiodes operate at static reverse bias, and incident light intensity is obtained from the relatively week photocurrent. In this paper, we... 
AVALANCHE PHOTODIODES | IMAGE SENSOR | PHYSICS, APPLIED | PHOTODETECTOR | SILICON
Journal Article
IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, 03/2018, Volume 24, Issue 2, pp. 1 - 10
Over the past 20 years, we have developed arrays of custom-fabricated silicon and InP Geiger-mode avalanche photodiode arrays, CMOS readout circuits to... 
Image sensors | Laser radar | Electric breakdown | Avalanche photodiodes | Geiger-mode avalanche photodiodes | photon counting | Silicon | lidar | Photonics | QUANTUM SCIENCE & TECHNOLOGY | PHYSICS, APPLIED | OPTICS | ENGINEERING, ELECTRICAL & ELECTRONIC | CMOS | Large format | Format | Circuits | Avalanche diodes | Passive imaging | Arrays | Optical radar
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2014, Volume 35, Issue 3, pp. 372 - 374
This letter reports high performance AlGaN solar-blind avalanche photodiodes (APDs) with separate absorption and multiplication structure grown by... 
Absorption | Electric breakdown | photo-electrochemical treatment | Lighting | Avalanche photodiodes | Dark current | solar blind | separate absorption and multiplication | Gallium nitride | Aluminum gallium nitride | AlGaN | avalanche photodiodes | TEMPERATURE-DEPENDENCE | IMPACT IONIZATION | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Applied Physics Letters, ISSN 0003-6951, 09/2011, Volume 99, Issue 13, pp. 131110 - 131110-3
Near ultraviolet-sensitive separate absorption and multiplication avalanche photodiodes with GaN/SiC epitaxial layers grown on SiC substrate were fabricated.... 
gallium compounds | PHYSICS, APPLIED | silicon | avalanche photodiodes | dark conductivity | electric breakdown | semiconductor epitaxial layers | III-V semiconductors
Journal Article
Applied Physics Letters, ISSN 0003-6951, 09/2017, Volume 111, Issue 10, p. 101104
Since impact ionization was observed in semiconductors over half a century ago, avalanche photodiodes (APDs) using impact ionization in a fashion of chain... 
AVALANCHE PHOTODIODES | PHYSICS, APPLIED | AMPLIFICATION | FILMS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2019, Volume 115, Issue 17
3D band structure-based Monte Carlo simulations have been utilized to simulate InAlAs digital alloy avalanche photodiodes. The simulated current–voltage curve... 
Computer simulation | Avalanche diodes | Indium aluminum arsenides | Ionization coefficients | Noise factor | Photodiodes
Journal Article
Journal of Lightwave Technology, ISSN 0733-8724, 06/2017, Volume 35, Issue 12, pp. 2380 - 2384
Journal Article
Journal of Physics B: Atomic, Molecular and Optical Physics, ISSN 0953-4075, 10/2017, Volume 50, Issue 21, p. 214003
Journal Article
Defence Science Journal, ISSN 0011-748X, 03/2017, Volume 67, Issue 2, pp. 159 - 168
Journal Article
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