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crystallography (6) 6
a3. metalorganic vapor phase epitaxy (3) 3
a3. molecular beam epitaxy (3) 3
b1. arsenides (3) 3
b3. laser diodes (3) 3
epitaxy (3) 3
inp (3) 3
a1. x-ray diffraction (2) 2
b1. tertiarybutylchloride (2) 2
b2. semiconducting iii-v materials (2) 2
b2. semiconducting iii–v materials (2) 2
b2. semiconducting quaternary alloys (2) 2
drei-fünf-verbindung (2) 2
galliumarsenid (2) 2
galliumverbindung (2) 2
halbleiterwachstum (2) 2
indiumphosphid (2) 2
indiumverbindung (2) 2
metalorganic vapor phase epitaxy (2) 2
molecular beam epitaxy (2) 2
movpe (2) 2
quantum wells (2) 2
semiconducting iii-v materials (2) 2
tertiarybutylchloride (2) 2
600-grad-c-bereich (1) 1
a1. in situ etching (1) 1
a1. in-situ etching (1) 1
a2. tensile strain (1) 1
a3. molecular beam eiptaxy (1) 1
a3. movpe (1) 1
a3. quantum wells (1) 1
a3. superlattices (1) 1
aluminium (1) 1
aluminiumverbindung (1) 1
arsenides (1) 1
b1. algainas/inp (1) 1
b1. aluminium (1) 1
b1. gainasp (1) 1
b1. halogen additive (1) 1
b1. ingaas (1) 1
b1. inp (1) 1
b1. nitrides (1) 1
b1. phosphides (1) 1
b2. semiconducting indium compounds (1) 1
b3 quantum-well lasers (1) 1
b3. buried heterostructure laser (1) 1
b3. infrared devices (1) 1
b3. nonlinear optical (1) 1
b3. optical fiber device (1) 1
b3. quantum-well lasers (1) 1
buried heterostructure laser (1) 1
chemiestrahlepitaxialwachstum (1) 1
condensed matter physics (1) 1
den kondenserade materiens fysik (1) 1
einmischen (1) 1
energielücke (1) 1
fysik (1) 1
gainasp (1) 1
galliumarsenidsubstrat (1) 1
gasphasenepitaxialwachstum (1) 1
growth (1) 1
halbleiterdünnschicht (1) 1
halbleiterepitaxialschicht (1) 1
halbleiterschicht (1) 1
halogen additives (1) 1
halvledarfysik (1) 1
hcl (1) 1
in situ etching (1) 1
in-situ etching (1) 1
indiumarsenid (1) 1
ingaas (1) 1
kondenserade materiens fysik (1) 1
laser diodes (1) 1
lasers (1) 1
leitungsband (1) 1
materials science, multidisciplinary (1) 1
metallorganische gasphasenabscheidung (1) 1
metallorganische gasphasenepitaxie (1) 1
mocvd reactor (1) 1
molecular-beam epitaxy (1) 1
movpe reactor (1) 1
natural sciences (1) 1
naturvetenskap (1) 1
nitrides (1) 1
nonlinear optical (1) 1
oberflächenstruktur (1) 1
optical fiber device (1) 1
phosphides (1) 1
photolumineszenz (1) 1
physical sciences (1) 1
physics (1) 1
physics, applied (1) 1
plasmabearbeiten (1) 1
plasmamaterialbearbeitung (1) 1
precursor (1) 1
quantentopf (1) 1
quantentopflaser (1) 1
quantum-wells (1) 1
semiconducting indium compounds (1) 1
semiconductor industry (1) 1
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Journal of Crystal Growth, ISSN 0022-0248, 2004, Volume 272, Issue 1, pp. 543 - 548
The low-pressure metalorganic vapor-phase epitaxy (LP-MOVPE) of tensile AlGaInAs multi-quantum wells (MQWs) for transverse magnetic (TM) 1.3 μm emitting lasers... 
B1. AlGaInAs/InP | A2. Tensile strain | B3. Quantum-well lasers | A3. Metalorganic vapor phase epitaxy | A1. X-ray diffraction | B1. Algainas/inp | B3 quantum-well lasers
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2001, Volume 227, pp. 319 - 323
Recently, we demonstrated InP-based VCSELs at 1.5 μm with record device performance, achieving low threshold currents (< 1 mA), threshold voltages (∼1 V) and... 
B3. Laser diodes | A3. Molecular beam eiptaxy | B1. Arsenides | molecular beam epitaxy | laser diodes | PHYSICS, APPLIED | CRYSTALLOGRAPHY | arsenides | MATERIALS SCIENCE, MULTIDISCIPLINARY
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2007, Volume 301, pp. 941 - 944
Vertical-cavity surface-emitting lasers are attractive light sources particularly for gas-sensing applications. Using the AlGaInAs/InP material system, an... 
B1. Arsenides | A3. Molecular beam epitaxy | B3. Laser diodes | B2. Semiconducting quaternary alloys | B3. Infrared devices
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2003, Volume 251, Issue 1, pp. 748 - 753
Buried tunnel junction vertical-cavity surface-emitting lasers (BTJ-VCSELs) are demonstrated as light sources in the wavelength range from 1.3 to 2.0 μm.... 
B1. Arsenides | A3. Molecular beam epitaxy | B3. Laser diodes | B2. Semiconducting quaternary alloys
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2003, Volume 248, pp. 426 - 430
We present a novel modified technique of in situ etching with tertiarybutyl chloride (TBCl) which allows etching of both, GaInAsP/InP and AlGaInAs/InP... 
B1. GaInAsP | B1. Tertiarybutylchloride | A3. Metalorganic vapor phase epitaxy | A1. In-situ etching | B3. Buried heterostructure laser | in-situ etching | buried heterostructure laser | tertiarybutylchloride | MOCVD REACTOR | GaInAsP | INP | CRYSTALLOGRAPHY | MOVPE | metalorganic vapor phase epitaxy
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2009, Volume 311, Issue 7, pp. 1719 - 1722
Growth studies of Ga In As N quantum wells with indium contents covering the full compositional range ( =0…1) have been performed using a gas-source MBE and a... 
A3. Quantum wells | A3. Superlattices | B2. Semiconducting indium compounds | B1. Nitrides | Nitrides | CRYSTALLOGRAPHY | Semiconducting indium compounds | QUANTUM-WELLS | Quantum wells | Superlattices
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2005, Volume 278, Issue 1, pp. 751 - 755
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2005, Volume 282, Issue 1, pp. 7 - 17
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2003, Volume 248, pp. 400 - 404
Alloy composition shift and control during Cl-assisted metalorganic vapor phase epitaxial (MOVPE) growth was investigated. Tertiarybutylchloride (TBCl) was... 
A3. Metalorganic vapor phase epitaxy | B1. InP | B1. InGaAs | B1. Halogen additive | InGaAs | EPITAXY | InP | CRYSTALLOGRAPHY | halogen additives | metalorganic vapor phase epitaxy
Journal Article
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