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crystallography (95) 95
materials science, multidisciplinary (58) 58
physics, applied (57) 57
analysis (28) 28
growth (26) 26
index medicus (22) 22
b1. elemental solids (21) 21
elemental solids (19) 19
epitaxy (18) 18
x-ray diffraction (17) 17
thin films (16) 16
a1. characterization (15) 15
crystals (15) 15
a1. x-ray diffraction (14) 14
characterization (14) 14
crystal growth (14) 14
crystal structure (14) 14
a1. crystal structure (13) 13
dielectric films (13) 13
a3. molecular beam epitaxy (12) 12
chemistry (12) 12
molecular beam epitaxy (12) 12
silicium (12) 12
röntgenbeugung (11) 11
b2. semiconducting silicon (10) 10
nanostructures (10) 10
semiconducting materials (10) 10
semiconducting silicon (10) 10
a1. nanostructures (9) 9
a2. single crystal growth (9) 9
b2. semiconducting materials (9) 9
defects (9) 9
elementhalbleiter (9) 9
halbleiterdünnschicht (9) 9
halbleiterwachstum (9) 9
humans (9) 9
morphology (9) 9
nanomaterials (9) 9
silicon (9) 9
a1. crystal morphology (8) 8
adsorption (8) 8
aflatoxin b1 (8) 8
animals (8) 8
crystal morphology (8) 8
deposition (8) 8
diffraction (8) 8
doping (8) 8
mass spectrometry (8) 8
nitrides (8) 8
nucleation (8) 8
optical properties (8) 8
synthesis (8) 8
transmissionselektronenmikroskopie (8) 8
vitamin b1 (8) 8
aflatoxins (7) 7
alloys (7) 7
b1. nanomaterials (7) 7
b1. nitrides (7) 7
mycotoxins (7) 7
temperature (7) 7
thin-films (7) 7
a1. solid solutions (6) 6
a2. growth from melt (6) 6
atomkraftmikroskopie (6) 6
b1. metals (6) 6
b3. solar cells (6) 6
chemical vapor deposition (6) 6
chemische röntgenanalyse (6) 6
chemisches aufdampfen (6) 6
chemistry, multidisciplinary (6) 6
copper (6) 6
crystal-growth (6) 6
films (6) 6
kinetics (6) 6
metals (6) 6
molecular-beam epitaxy (6) 6
nanowires (6) 6
scanning electron microscopy (6) 6
semiconducting iii-v materials (6) 6
single crystal growth (6) 6
solar cells (6) 6
solar-cells (6) 6
structure (6) 6
sublimation (6) 6
x-rays (6) 6
a1. defects (5) 5
a1. doping (5) 5
a2. growth from vapor (5) 5
a3. polycrystalline deposition (5) 5
apoptosis (5) 5
b1. gallium compounds (5) 5
b1. sulfides (5) 5
b2. semiconducting iii-v materials (5) 5
chemical properties (5) 5
drei-fünf-verbindung (5) 5
dünnfilm (5) 5
gallium compounds (5) 5
indiumverbindung (5) 5
kristallstruktur (5) 5
lasers (5) 5
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Journal of Crystal Growth, ISSN 0022-0248, 11/2014, Volume 405, pp. 6 - 10
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 11/2019, Volume 525, p. 125166
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 01/2020, Volume 529, p. 125301
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 02/2017, Volume 459, pp. 105 - 111
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 09/2013, Volume 378, pp. 333 - 336
By depositing atomic C atoms on the grained Cu foil by using molecular beam epitaxy technique (MBE), high-quality graphene is obtained at low substrate... 
A1. Growth models | A3. Molecular beam epitaxy | B1. Elemental solids | A1. Crystal structure | Molecular beam epitaxy | Growth models | Crystal structure | Elemental solids | LARGE-AREA | COPPER FOILS | PHYSICS, APPLIED | CHEMICAL-VAPOR-DEPOSITION | MATERIALS SCIENCE, MULTIDISCIPLINARY | CRYSTALLOGRAPHY | Crystal growth
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2010, Volume 312, Issue 22, pp. 3388 - 3394
A method of the high-pressure high-temperature synthesis of single crystals of orthorhombic high-pressure boron B 28 from metal solutions is presented. The... 
B2. Semiconducting materials | A1. Characterization | B1. Elemental solids | A2. Single-crystal growth | A2. Growth from melt | Characterization | PHYSICS, APPLIED | BORON | METALS | Single-crystal growth | FORM | MATERIALS SCIENCE, MULTIDISCIPLINARY | Semiconducting materials | CRYSTALLOGRAPHY | Growth from melt | Elemental solids
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 01/2013, Volume 362, Issue 1, pp. 29 - 32
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 04/2017, Volume 463, pp. 1 - 9
Dislocation clusters are the main crystal defects in multicrystalline silicon and are detrimental for solar cell efficiency. They were formed during the... 
A1. Directional solidification | A1. Characterization | B1. Elemental solids | A2. Growth from melt | A1. Line defects | RECOMBINATION | DEFECTS | PHYSICS, APPLIED | SOLAR-CELLS | MATERIALS SCIENCE, MULTIDISCIPLINARY | CRYSTAL | CRYSTALLOGRAPHY | INGOT | BOUNDARIES | GENERATION | Silicon | Investigations
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 11/2010, Volume 312, Issue 22, pp. 3388 - 3394
A method of the high-pressure high-temperature synthesis of single crystals of orthorhombic high-pressure boron B from metal solutions is presented. The method... 
B2. Semiconducting materials | A1. Characterization | B1. Elemental solids | A2. Single-crystal growth | A2. Growth from melt
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 06/2009, Volume 311, Issue 12, pp. 3273 - 3277
Oxygen precipitation in conventional and nitrogen co-doped heavily phosphorus (P)-doped Czochralski silicon (CZ-Si) crystal subjected to various... 
A1. Doping | A1. Impurity | B1. Elemental solids | A1. Defects | B2. Semiconducting silicon | WAFERS | PHYSICS, APPLIED | Impurity | MELT | MATERIALS SCIENCE, MULTIDISCIPLINARY | Doping | COMPLEXES | CRYSTALLOGRAPHY | Defects | Elemental solids | MICROSEGREGATION | FLUCTUATIONS | GROWTH | CRYSTALS | VACANCIES | Semiconducting silicon | Rain and rainfall | Silicon
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 03/2008, Volume 310, Issue 6, pp. 1057 - 1061
Polycrystalline ZnGeN was synthesized by a new method, via vapor growth from Zn and Ge with thermal cracking of NH . Measured lattice parameters indicate a... 
B2. Semiconducting materials | A2. Growth from high temperature solutions | B1. Nitrides | A1. X-ray diffraction | A1. Crystal structure | A1. Defects | growth from high temperature solutions | x-ray diffraction | SEMICONDUCTORS | defects | crystal structure | CRYSTALLOGRAPHY | nitrides | semiconducting materials
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2004, Volume 265, Issue 1, pp. 168 - 173
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2007, Volume 299, Issue 2, pp. 374 - 385
Electron diffraction experiments and atomistic simulations have been performed on oxygen molecular clusters containing up to several hundreds of O 2 molecules,... 
B1. Elemental solids | A1. Computer simulations | B1. Nanostructures | GAS CLUSTERS | NONCRYSTALLINE STRUCTURE | BULK MATTER | CRYSTALLOGRAPHY | computer simulations | elemental solids | SF6 CLUSTERS | nanostructures | LENNARD-JONES CLUSTERS | ELECTRON-ATTACHMENT | SOLID OXYGEN | MOLECULAR CLUSTERS | STRUCTURAL TRANSITIONS | ARGON CLUSTERS
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2006, Volume 287, Issue 2, pp. 391 - 396
Crystalline silicon thin-film solar cells which shall exceed a conversion efficiency of 15% require a coarse-grained silicon layer of at least 5 μm thickness... 
A1. Volume defects | B3. Solar cells | B1. Elemental solids | A1. Recrystallization | B2. Semiconducting silicon | semiconducting silicon | CRYSTALLOGRAPHY | recrystallization | elemental solids | solar cells | volume defects | Thin films | Solar cells | Solar energy industry | Solar batteries | Solar energy | Silicon | Dielectric films
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2003, Volume 254, Issue 1, pp. 262 - 266
The purification method for refining of tellurium to 6N+ using quadruple zone refining is described. Trace impurities at ppb/ppt level are analyzed using... 
A1. Segregation | A1. Impurities | A1. Purification | B1. Elemental solids | A1. X-ray diffraction | B1. Metals | x-ray diffraction | impurities | purification | metals | CRYSTALLOGRAPHY | elemental solids | segregation
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2001, Volume 226, Issue 2, pp. 209 - 214
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2002, Volume 241, Issue 4, pp. 489 - 497
Journal Article
Progress in Crystal Growth and Characterization of Materials, ISSN 0960-8974, 2006, Volume 52, Issue 1, pp. 10 - 14
A theoretical study of physical and electronic properties of silicon has been made by using pseudopotential method within density functional theory (DFT) in... 
GGA | Electronic structure | GW approximation | Band gap | B1. Elemental solids | B2. Semiconducting silicon | semiconducting silicon | electronic structure | MATERIALS SCIENCE, CHARACTERIZATION & TESTING | CRYSTALLOGRAPHY | elemental solids | band gap | Silicon | Semiconductor industry
Journal Article
Progress in Crystal Growth and Characterization of Materials, ISSN 0960-8974, 2006, Volume 52, Issue 1, pp. 4 - 9
An ab initio study of the structural and electronic properties of carbon nanowires C n with n = 1, 6 has been made within density functional theory (DFT) in... 
B1. Nanomaterials | elemental solids | low dimensional structures | A1. Nanostructures | MATERIALS SCIENCE, CHARACTERIZATION & TESTING | nanomaterials, elemental solids | CRYSTALLOGRAPHY | nanostructures, low dimensional structures | Analysis | Nanotechnology
Journal Article
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