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Journal of Crystal Growth, ISSN 0022-0248, 04/2019, Volume 511, pp. 89 - 92
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 05/2019, Volume 514, pp. 40 - 44
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 06/2017, Volume 468, pp. 567 - 571
In current paper nanoheterostructure optimization for LED and phototransistor usage is discussed. Special doping into quantum wells and barriers by Indium... 
B3. Light emitting diodes | A1. Computer simulation | B2. Semiconducting materials | B1. Nitrides | Nitrides | PHYSICS, APPLIED | Computer simulation | QUANTUM | WELL | MATERIALS SCIENCE, MULTIDISCIPLINARY | Semiconducting materials | Light emitting diodes | CRYSTALLOGRAPHY | HETERO | Light-emitting diodes | Indium | Quantum wells | Photoluminescence
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 12/2016, Volume 456, pp. 5 - 14
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2009, Volume 311, Issue 7, pp. 1632 - 1639
We present recent progress in growth of nitride-based laser diodes (LDs) and efficient light-emitting diodes (LEDs) made by plasma-assisted MBE (PAMBE). This... 
A3. Molecular beam epitaxy | B3. Laser diodes | B1. Nitrides | PHYSICS, APPLIED | CONTINUOUS-WAVE OPERATION | INGAN | MATERIALS SCIENCE, MULTIDISCIPLINARY | MOLECULAR-BEAM EPITAXY | DECOMPOSITION | CRYSTALLOGRAPHY | Laser diodes | Nitrides | III-NITRIDES | PRESSURE | GAN | CRYSTAL-GROWTH | Molecular beam epitaxy | INDIUM | GALLIUM | Circuit components | Plasma physics | Semiconductor lasers | Nitrogen | Epitaxy
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 12/2016, Volume 456, pp. 133 - 136
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 09/2014, Volume 402, pp. 308 - 311
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 09/2014, Volume 401, pp. 791 - 794
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2008, Volume 310, Issue 6, pp. 1075 - 1080
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 11/2018, Volume 501, pp. 74 - 80
•GaN growth kinetics in basic ammonothermal system investigated.•In situ internal fluid T measurements in dissolution and growth zones.•Mass transport and... 
A1. Crystal growth | A2. Ammonothermal | B1. Nitrides | A1. Kinetics | B1. Bulk GaN | Crystal growth | PHYSICS, APPLIED | Bulk GaN | PERMEABILITY | MATERIALS SCIENCE, MULTIDISCIPLINARY | SUPERCRITICAL AMMONIA | CRYSTALLOGRAPHY | SOLUBILITY | Ammonothermal | Nitrides | HYDROGEN | PRESSURE | NICKEL | GAN | Kinetics | MORPHOLOGY | Local transit | Gallium nitrate | Activation energy | Analysis
Journal Article