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crystallography (515) 515
semiconducting ii-vi materials (463) 463
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cdte (35) 35
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chemical vapor deposition (33) 33
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arrays (23) 23
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zinc-oxide (23) 23
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growth from solutions (22) 22
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Journal of Crystal Growth, ISSN 0022-0248, 01/2019, Volume 506, pp. 201 - 205
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2006, Volume 287, Issue 1, pp. 78 - 84
Transparent and conductive high-preferential c-axis-oriented Al-doped zinc oxide (ZnO:Al, AZO) thin films have been prepared by the sol–gel route. Film... 
B2. semiconducting II–VI materials | B1. ZnO:Al | B2. semiconducting II-VI materials | THIN-FILMS | SOLAR-CELLS | ZnO : Al | DEPOSITION | ELECTRICAL-PROPERTIES | OPTICAL-PROPERTIES | semiconducting II-VI materials | CRYSTALLOGRAPHY | LAYERS | Thin films | Electrical conductivity | Optical properties | Analysis | Photoluminescence | Zinc oxide | Dielectric films
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 12/2017, Volume 479, pp. 93 - 97
•Diatomic bond energies are use to estimate a donor formation energy.•The Efficiency of Halogens donors within the Zn Chalcogenides is studied.•Diffusion... 
A1. Doping | B2. Semiconducting II-VI materials | B1. Zinc compounds | A1. Diffusion | DEFECTS | PHYSICS, APPLIED | LEAD-TELLURIDE | MATERIALS SCIENCE, MULTIDISCIPLINARY | Doping | NANOCRYSTALS | MECHANISMS | CRYSTALLOGRAPHY | ZINC | SELF-COMPENSATION | Zinc compounds | Semiconducting II-VI materials | CRYSTALS | Diffusion | VAPOR-PHASE | ACCEPTOR | Activation energy | Incorporation | Zinc
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2004, Volume 260, Issue 1, pp. 166 - 170
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 09/2013, Volume 378, pp. 266 - 269
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 09/2013, Volume 378, pp. 233 - 237
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2003, Volume 247, Issue 1, pp. 119 - 125
The effect of drying conditions and the first- and second-heat treatment on the structural, electrical and optical properties of ZnO thin films prepared by the... 
B1. Oxide | A3. Sol–gel method | B2. Semiconducting II–VI materials | B1. Zinc compounds | B2. Semiconducting II-VI materials | A3. Sol-gel method | oxide | OXIDE THIN-FILMS | DEPOSITION | ZINC-OXIDE | GROWTH | SPRAY-PYROLYSIS | semiconducting II-VI materials | zinc compounds | CRYSTALLOGRAPHY | sol-gel method
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 09/2013, Volume 378, pp. 270 - 273
II–VI-based microcavities grown by molecular beam epitaxy designed for emission in the blue spectral region have been comprehensively characterized by... 
A3. Superlattices | B1. Sulfides | B2. Semiconducting II–VI compounds | A3. Molecular beam epitaxy | A1. Interfaces | B1. Zinc compounds | Interfaces | Molecular beam epitaxy | Semiconducting II-VI compounds | Sulfides | Zinc compounds | Superlattices | POLARITON | PHYSICS, APPLIED | TEMPERATURE | MATERIALS SCIENCE, MULTIDISCIPLINARY | CRYSTALLOGRAPHY
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2004, Volume 268, Issue 3, pp. 596 - 601
Highly conductive and transparent aluminum-doped zinc oxide (ZnO:Al) thin films have been prepared using the filtered cathodic vacuum arc technique at... 
B2. Semiconducting II–VI materials | A3. Filtered cathodic vacuum arc | B1. ZnO:Al | B2. Semiconducting II-VI materials | PHYSICS, APPLIED | ZONE MODEL | TEMPERATURE | ZnO : Al | SUBSTRATE | DEPOSITION | MATERIALS SCIENCE, MULTIDISCIPLINARY | filtered cathodic vacuum arc | semiconducting II-VI materials | CRYSTALLOGRAPHY
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2011, Volume 322, Issue 1, pp. 57 - 62
Journal Article