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crystallography (266) 266
materials science, multidisciplinary (179) 179
physics, applied (179) 179
b1. nitrides (171) 171
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epitaxy (133) 133
aluminum compounds (119) 119
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growth (80) 80
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nitrid (67) 67
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drei-fünf-verbindung (62) 62
aluminiumverbindung (60) 60
sapphire (59) 59
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gan (44) 44
liquors (42) 42
crystal growth (39) 39
chemical vapor deposition (38) 38
gallium nitrides (38) 38
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metallorganische gasphasenabscheidung (37) 37
molecular-beam epitaxy (36) 36
metallorganische gasphasenepitaxie (35) 35
a3. metalorganic vapor phase epitaxy (34) 34
crystals (34) 34
metalorganic vapor phase epitaxy (33) 33
a1. characterization (32) 32
halbleiterverbindung (32) 32
saphirsubstrat (32) 32
aluminiumnitrid (31) 31
atomic force microscopy (31) 31
halbleiterwerkstoff (31) 31
x-ray diffraction (31) 31
characterization (30) 30
halbleiterwachstum (30) 30
photolumineszenz (30) 30
a1. crystal structure (29) 29
crystal structure (29) 29
deposition (29) 29
halbleiter mit grosser energielücke (28) 28
molekularstrahlepitaxie (28) 28
vapor-phase epitaxy (28) 28
a1. x-ray diffraction (27) 27
röntgenbeugung (27) 27
saphir (27) 27
b2. semiconducting aluminium compounds (26) 26
gallium compounds (26) 26
a3. hydride vapor phase epitaxy (25) 25
layers (25) 25
aluminum (24) 24
hydride vapor phase epitaxy (24) 24
a1. nanostructures (23) 23
films (23) 23
galliumverbindung (23) 23
indium (23) 23
photoluminescence (23) 23
schraubenversetzung (23) 23
silicon (23) 23
substrates (23) 23
thin films (23) 23
a1. crystal morphology (22) 22
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doping (22) 22
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defects (21) 21
growth from vapor (21) 21
optical properties (21) 21
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thin-films (20) 20
alloys (19) 19
heterostructures (19) 19
kristallqualität (19) 19
nucleation (19) 19
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density (18) 18
dielectric films (18) 18
a1. substrates (17) 17
b1. gallium compounds (17) 17
b1. zinc compounds (17) 17
diffraction (17) 17
gallium arsenide (17) 17
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light-emitting-diodes (17) 17
single-crystals (17) 17
structure (17) 17
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Journal of Crystal Growth, ISSN 0022-0248, 12/2016, Volume 455, pp. 157 - 160
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 12/2016, Volume 456, pp. 155 - 159
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 07/2017, Volume 470, pp. 154 - 158
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2002, Volume 246, Issue 3, pp. 287 - 298
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 04/2018, Volume 487, pp. 50 - 56
Journal Article
Journal Article
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 09/2018, Volume 498, pp. 224 - 229
•N-Al co-doped n-type 4H-SiC crystals were grown using the PVT method.•The relation between impurity concentration and Al4C3 temperature was investigated.•The... 
A1. Doping | B2. Semiconducting silicon compounds | A1. Defect | A2. Growth from vapor | VELOCITY | DISLOCATIONS | PHYSICS, APPLIED | INCLUSIONS | BEHAVIOR | MATERIALS SCIENCE, MULTIDISCIPLINARY | Doping | IMPURITY | CRYSTALLOGRAPHY | Growth from vapor | Semiconducting silicon compounds | SINGLE-CRYSTALS | STACKING-FAULTS | EXPANSION | Defect
Journal Article
Journal Article