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Journal of Crystal Growth, ISSN 0022-0248, 09/2015, Volume 425, pp. 389 - 392
In this paper we demonstrate ultraviolet (UV) light emitting diodes (LEDs) grown on metamorphic AlGaN buffers on freestanding GaN (202¯1) substrates by ammonia... 
A3 Molecular beam epitaxy | B2 Semiconducting gallium compounds | B3 Light emitting diodes | B1 Nitrides | Circuit components | Ammonia | Light-emitting diodes | Epitaxy | Nitrides | Quantum wells | Gallium compounds | Electric properties | Volt-ampere characteristics | Gallium nitrides | Molecular beam epitaxy | Buffers | Devices | Metamorphic
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 03/2015, Volume 414, pp. 258 - 262
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 06/2017, Volume 468, pp. 562 - 566
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 06/2017, Volume 468, pp. 585 - 589
Journal Article
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2011, Volume 326, Issue 1, pp. 113 - 115
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2006, Volume 288, Issue 1, pp. 157 - 161
In this paper we present the analysis of delamination in light-emitting diode (LED) packages by transient thermal measurement and thermo-mechanical simulation.... 
B3. Light-emitting diode | A1. Delamination | A1. Thermal resistance | A1. Thermo-mechnical stress | delamination | thermal resistance | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | thermo-mechnical stress | CRYSTALLOGRAPHY | light-emitting diode | Circuit components | Light-emitting diodes | Laminated materials | Analysis
Journal Article