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basal plane (230) 230
dislocations (134) 134
materials science, multidisciplinary (98) 98
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silicon carbide (71) 71
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transmission electron microscopy (33) 33
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planes (22) 22
density (21) 21
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screw dislocations (21) 21
burgers vector (20) 20
physics, condensed matter (20) 20
deformation mechanisms (19) 19
epitaxiale schicht (19) 19
epitaxialschicht (19) 19
threading dislocations (19) 19
basal-plane (18) 18
basal-plane dislocations (18) 18
crystal structure (18) 18
engineering, electrical & electronic (18) 18
nucleation (18) 18
analysis (17) 17
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etching (17) 17
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hochtemperatur (17) 17
microscopy (17) 17
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temperature (17) 17
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transmissionselektronenmikroskopie (17) 17
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basal-plane dislocation (16) 16
conversion (16) 16
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ätzen (16) 16
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cathodoluminescence (12) 12
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Journal of Nuclear Materials, ISSN 0022-3115, 07/2015, Volume 462, pp. 126 - 134
The interaction between mixed dislocations gliding in the basal plane with elliptical prism plane vacancy loops characteristic of irradiation induce loops is studied using Molecular Dynamics simulations... 
MOLECULAR-DYNAMICS | DISPLACEMENT CASCADES | METALS | CLUSTERS | ALPHA-ZIRCONIUM | ALLOYS | NUCLEAR SCIENCE & TECHNOLOGY | MATERIALS SCIENCE, MULTIDISCIPLINARY | ATOMIC-LEVEL | DEFECT | DEFORMATION | EDGE DISLOCATIONS | Zirconium | Vacancies | Planes | Basal plane | Prisms | Dislocation loops | Gliding | Burgers vector | Dislocations
Journal Article
physica status solidi (b), ISSN 0370-1972, 01/2016, Volume 253, Issue 1, pp. 73 - 77
Journal Article
Acta Materialia, ISSN 1359-6454, 2014, Volume 81, pp. 284 - 290
Journal Article
Materials science forum, ISSN 0255-5476, 06/2018, Volume 924, pp. 143 - 146
...Comparative Evaluation of Forward Voltage Degradation due to Propagating and Converted Basal Plane Dislocations Yoshitaka Nishiharaa*, Koji Kamei, Kenji Momose... 
Basal plane dislocation | Pin diode | Forward voltage degradation | 4H-SiC | Device temperature | Basal plane | Dislocations
Journal Article
Materials science forum, ISSN 0255-5476, 06/2015, Volume 821-823, pp. 311 - 314
Journal Article
Japanese Journal of Applied Physics, ISSN 1347-4065, 2019, Volume 58, Issue SC, p. SCCB29
Dislocations in a single-crystal aluminum nitride bulk substrate have been characterized using synchrotron X-ray topography (XRT... 
EXTENDED DEFECTS | BASAL-PLANE | THREADING EDGE DISLOCATIONS | PHYSICS, APPLIED | GAN | MORPHOLOGY | Crystal growth | Aluminum | Crystals | Basal plane | X ray topography | Substrates | Single crystals | Edge dislocations | Mathematical analysis | Topography | Vectors (mathematics) | Arrays | Synchrotron radiation
Journal Article
Materials science forum, ISSN 0255-5476, 02/2014, Volume 778-780, pp. 309 - 312
Suppression of basal plane dislocations (BPDs) from critical epitaxial drift layer has occurred mainly by converting BPDs in the substrate into threading edge dislocations before the BPDs enter the drift layer... 
Basal plane dislocation | Half-loop array | Inclusions | BPD | SiC epitaxy | Migration | Epitaxy | Basal plane | Drift | Epitaxial growth | Glide | Dislocations
Journal Article
Materials science forum, ISSN 0255-5476, 02/2014, Volume 778-780, pp. 99 - 102
We have investigated a conversion of basal plane dislocation (BPD) to threading edge dislocation (TED... 
Basal plane dislocation | KOH etching | Vicinal | Off-angle | Epitaxial layer | 4H-SiC | Edge dislocations | Epitaxial layers | Silicon substrates | Basal plane | Etching | Conversion | X-ray topography | Dislocations
Journal Article
Materials science forum, ISSN 0255-5476, 06/2018, Volume 924, pp. 80 - 83
The glide of basal plane dislocations (BPDs) during 150 mm 4H-SiC epitaxial growth by a hot-wall reactor is characterized, and its formation mechanisms are discussed... 
4H-SiC epitaxial growth | Basal plane dislocations | Glide | Hot-wall reactor | 150 mm substrates | Basal plane | Magnetism | Epitaxial growth | Crystals | Dislocations
Journal Article
Materials science forum, ISSN 0255-5476, 01/2013, Volume 740-742, pp. 601 - 604
Basal plane dislocations (BPDs) converting to threading edge dislocations (TEDs) has been observed in 4H-SiC epilayers after thermal annealing at high temperatures... 
SiC epilayers | Ion implantation | Thermal annealing | Basal plane dislocations (BPDS) | BPD conversion | Annealing | Edge dislocations | Grazing incidence | Materials science | Basal plane | Conversion | X-ray topography | Dislocations
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 08/2015, Volume 30, Issue 8, p. 85002
Journal Article
Materials science forum, ISSN 0255-5476, 01/2013, Volume 740-742, pp. 829 - 832
To solve the problem that no preferential chemical etching is available for dislocation revelation from the carbon-face (C-face... 
Carbon-face (000-1) | Defect-selective | 4H-SiC | Chemical etching | Activation energy | Vaporized KOH | Dislocation | Correlation | Edge dislocations | Epitaxy | Basal plane | Mapping | Etching | Dislocations
Journal Article
Materials science forum, ISSN 0255-5476, 06/2015, Volume 821-823, pp. 297 - 302
Elimination of basal plane dislocations (BPDs) in epitaxial 4H-SiC is demonstrated via a novel pulsed annealing technique in a moderate N2 overpressure of 0.55 MPa. BPD removal in 15... 
Basal plane dislocation | Rapid thermal annealing | Defect | Photoluminescence | Annealing | Overpressure | Epitaxy | Basal plane | Carbon | Dislocations | Chambers
Journal Article
2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), ISSN 1662-9752, 09/2016, Volume 897, pp. 1 - 1
The relationship between surface morphology and spatial distribution of basal plane dislocations in 4H-SiC crystal grown by top-seeded solution growth on the C face was investigated... 
macrostep | Top-seeded solution growth | Silicon carbide | Surface morphology | Morphology | Crystals | Graphite | Surface topography | Face | X-ray topography | basal plane dislocation | Basal plane dislocation | Macrostep | Crystal growth
Conference Proceeding
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