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Physical Chemistry Chemical Physics, ISSN 1463-9076, 2017, Volume 19, Issue 33, pp. 22546 - 22554
In the last few decades, dye-sensitized solar cell (DSC) technology has been demonstrated to be a promising candidate for low cost energy production due to... 
LONG-TERM STABILITY | LIQUID ELECTROLYTES | RECOMBINATION | OPEN-CIRCUIT VOLTAGE | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL | REVERSE BIAS | AGING TEST | DEVICE | CHEMISTRY, PHYSICAL | TITANIUM-DIOXIDE FILMS | IMPEDANCE SPECTROSCOPY | TIO2
Journal Article
Nano Letters, ISSN 1530-6984, 03/2019, Volume 19, Issue 3, pp. 1460 - 1466
Thousands of reports have demonstrated the exceptional performance of sensors based on carbon nanotube (CNT) transistors, with promises of transformative... 
Carbon nanotube | operating modes | sensor | settling | bias stress | stability | FIELD-EFFECT TRANSISTOR | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | SINGLE | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | VARIABILITY | CIRCUITS | GAS | BIOSENSOR | ALIGNED ARRAYS | BREAKDOWN
Journal Article
ACS Applied Materials & Interfaces, ISSN 1944-8244, 10/2015, Volume 7, Issue 40, pp. 22380 - 22384
The effect of grain size and interface dependence of bias stress stability of C60-based n-type organic field effect transistors (OFETs) has been studied. It... 
grain boundaries | parylene | n-type OFETs stability | bias stress | charge trapping in semiconductor and dielectric interface | threshold voltage shift | PERYLENE DIIMIDE | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | TOP | OFETS | THIN-FILM TRANSISTORS | C-60 | HIGH-MOBILITY
Journal Article
ACS Applied Materials & Interfaces, ISSN 1944-8244, 12/2014, Volume 6, Issue 23, pp. 21363 - 21368
We proposed a simple method to deposit a vertically graded oxygen-vacancy active layer (VGA) to enhance the positive bias stress (PBS) stability of amorphous... 
In-Ga-Zn-O | bias stability | oxide semiconductor | oxygen vacancy | thin-film transistors | ELECTRICAL CHARACTERISTICS | PERFORMANCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY
Journal Article
Applied Surface Science, ISSN 0169-4332, 07/2019, Volume 481, pp. 642 - 648
Solution-processed polymer semiconductors are key materials in the fabrication of lightweight, low-cost, and flexible electronic devices without using the... 
Fluorinated polymer | Hole trapping | Organic field-effect transistor | Semiconductor/insulator blend | Gate-bias stress stability | Solution process | HIGH-PERFORMANCE | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | DIELECTRIC SURFACE | CHEMISTRY, PHYSICAL | MATERIALS SCIENCE, COATINGS & FILMS
Journal Article
Organic Electronics: physics, materials, applications, ISSN 1566-1199, 2014, Volume 15, Issue 11, pp. 3203 - 3210
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 12/2016, Volume 688, pp. 893 - 896
In this work, a methodology to analyze the stability of solution-processed transparent dielectric based on Spin-on Glass under electrical stress is presented.... 
Electrical stress | Spin-on glass | Solution-processed | BIAS DEPENDENCE | INSTABILITY | MOBILITY | MATERIALS SCIENCE, MULTIDISCIPLINARY | METALLURGY & METALLURGICAL ENGINEERING | ZINC-OXIDE | CHEMISTRY, PHYSICAL | FIELD-EFFECT TRANSISTORS | CHANNEL LAYER | TEMPERATURE | IMPROVEMENT | LAYER THICKNESS | Thin films | Dielectric films | Dielectrics | Transistors | Capacitors | Electric properties
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 07/2019, Volume 215, p. 111006
InAlZnO (IAZO) thin-film transistors (TFTs) containing an InZnO (IZO) conducting layer at the interface between the IAZO channel layer and the gate insulator... 
InAlZnO | Amorphous oxide semiconductor | Stability | Conducting layer | Thin-film transistor | PHYSICS, APPLIED | TEMPERATURE | NANOSCIENCE & NANOTECHNOLOGY | OPTICS | ENGINEERING, ELECTRICAL & ELECTRONIC | Thin films | Thickness | Semiconductor devices | Interface stability | Spectrum analysis | Bias | Threshold voltage | Photoelectrons | Thin film transistors | Transistors
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 01/2018, Volume 51, Issue 1, p. 15110
High bias-stress stability and low threshold voltage (V-th) shift under ambient conditions are highly desirable for practical applications of organic... 
HMDS monolayer | stretchehed expoential decay | bias stress stability | organic field effect transistor | HYDROGEN | TRANSPORT | PHYSICS, APPLIED | SELF-ASSEMBLED MONOLAYERS | THIN-FILM-TRANSISTOR | PERFORMANCE | INTERFACES
Journal Article
Organic Electronics, ISSN 1566-1199, 2011, Volume 12, Issue 8, pp. 1370 - 1375
[Display omitted] ► DNTT thin-film transistors have mobilities up to 2 cm 2/V s and on/off ratio of 10 8. ► DNTT thin-film transistors have better air... 
Air stability | Bias–stress stability | Organic thin-film transistors | Bias-stress stability | LARGE-AREA | PHYSICS, APPLIED | MOBILITY | MATERIALS SCIENCE, MULTIDISCIPLINARY | AIR | DRIVEN | FIELD-EFFECT TRANSISTORS | LIFETIME | CIRCUITS | DISPLAYS | ORGANIC SEMICONDUCTOR
Journal Article
Organic Electronics, ISSN 1566-1199, 11/2018, Volume 62, pp. 382 - 393
The effects of bias stress are investigated in organic thin film transistors based on the small molecule dinaphtho [2,3-b:2′,3′-f] thieno[3,2-b]thiophene... 
Density of states | DNTT | Bias stress | OTFT | PHYSICS, APPLIED | SEMICONDUCTOR | PERFORMANCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | FIELD-EFFECT TRANSISTORS | GATE-DIELECTRICS | ENVIRONMENTAL STABILITY | ELECTRICAL STABILITY | TFTS | THRESHOLD VOLTAGE INSTABILITY | DRAIN-BIAS | AIR STABILITY | Circuit components | Thin films | Thiophene | Dielectric films | Transistors | Humidity
Journal Article