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Journal of Crystal Growth, ISSN 0022-0248, 10/2017, Volume 475, pp. 39 - 43
ZnO main epilayers are deposited with three-pulsed precursors in every growth cycle at 100 °C on various thicknesses of 300 °C-grown homo-buffer layers by... 
B2. Semiconducting II-VI materials | A3. Atomic layer epitaxy | B1. Oxides | A1. Characterization | Buffer layers | Annealing | Temperature | Crystal defects | Crystal lattices | Photoluminescence | Atomic layer epitaxy | Thickness | Zinc oxides | Atomic layer deposition | Sapphire | Precursors | Electron mobility | Zinc oxide | Ambience | Buffers
Journal Article
Angewandte Chemie International Edition, ISSN 1433-7851, 06/2015, Volume 54, Issue 27, pp. 7764 - 7769
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 09/2010, Volume 43, Issue 37, pp. 374010 - 374010
In this paper we discuss and review results of recent studies of epitaxial growth of graphene on silicon carbide. The presentation is focused on high quality,... 
PHYSICS, APPLIED | EPITAXIAL GRAPHENE | HYDROGENATION | GROWTH | SURFACE | GAS | ELECTRONIC-STRUCTURE | Buffer layers | Hydrogen storage | Patterning | Silicon carbide | Graphene | Electronics | Epitaxial growth | Carbon | Teknik och teknologier | TEKNIKVETENSKAP | Engineering and Technology | TECHNOLOGY
Journal Article
Thin Solid Films, ISSN 0040-6090, 08/2016, Volume 612, pp. 8 - 13
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2015, Volume 107, Issue 24, p. 243904
Cu2ZnSnS4 (CZTS) solar cells typically include a CdS buffer layer in between the CZTS and ZnO front contact. For sulfide CZTS, with a bandgap around 1.5 eV,... 
Buffer layers | Solar cells | Conduction bands | Temperature dependence | Cadmium sulfides | Photoluminescence | Copper indium gallium selenides | Conduction cooling | Devices | Alignment | Atomic layer deposition | Photovoltaic cells | Zinc oxide | Copper zinc tin sulfide
Journal Article
Progress in Photovoltaics: Research and Applications, ISSN 1062-7995, 06/2017, Volume 25, Issue 6, pp. 431 - 440
(Cd,Zn)S buffer layer and Zn 1− x Mg x O window layer were investigated to replace the traditional CdS buffer layer and ZnO window layer in Cu(In,Ga)(Se,S) 2... 
1 | 2 | O window layer | Zn | [Mg]/([Mg] + [Zn]) ratio | x | Mg | Cu(In,Ga)(Se,S) | thin‐film solar cell | (Cd,Zn)S buffer layer | Urbach energy | thin-film solar cell | Solar cells | Temperature dependence | Energy gap | Quantum efficiency | Magnetron sputtering
Journal Article
Solar Energy Materials and Solar Cells, ISSN 0927-0248, 2011, Volume 95, Issue 6, pp. 1518 - 1526
The spray Ion Layer Gas Reaction (ILGAR) process starts with ultrasonic nebulisation of the precursor solution, e.g. InCl /ethanol for our successful buffer... 
Buffer layer | In 2S 3 | Chalcopyrite thin film solar cell | ILGAR | In-line process | PHYSICS, APPLIED | ENERGY & FUELS | MATERIALS SCIENCE, MULTIDISCIPLINARY | SPRAY-PYROLYSIS | BUFFER LAYERS | REACTION ILGAR | ZNO LAYER | ABSORBER | MODULES | GROWTH | In2S3 | CU(IN,GA)(S,SE) | PRECURSORS | INDIUM
Journal Article
Surface and Interface Analysis, ISSN 0142-2421, 04/2014, Volume 46, Issue 4, pp. 243 - 247
By introducing a thin MgO/TiN buffer, layer‐by‐layer growth of ZnO epilayer on Si(111) has been realized. ZnO film directly on Si(111) substrate is... 
ZnO film | Si substrate | buffer layer | epitaxy growth | POLARITY | OXIDE THIN-FILMS | MOLECULAR-BEAM EPITAXY | CHEMISTRY, PHYSICAL | Zinc oxide | Epitaxy | Optical properties | Buffer layers | Interface analysis | Diffraction | Magnesium oxide | Titanium nitride | Deposition
Journal Article
Journal Article
Energy and Environmental Science, ISSN 1754-5692, 11/2015, Volume 8, Issue 12, pp. 3442 - 3476
Journal Article
Energy and Environmental Science, ISSN 1754-5692, 02/2011, Volume 4, Issue 2, pp. 285 - 310
Journal Article