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Advanced functional materials, ISSN 1616-301X, 04/2019, Volume 29, Issue 17, pp. 1970113 - n/a
vertical stacking | gas sensor | van der Waals force | bipolar junction transistor | MoS2/WSe2/MoS2 heterostructure | Circuit components | Transistors | Junction transistors | Molybdenum disulfide | Semiconductor devices | Power amplifiers | Atomic properties | Two dimensional materials | Gas sensors | Heterostructures
Journal Article
2015, ISBN 9781455731435, xxxi, 699
Book
Journal of applied physics, ISSN 0021-8979, 05/2013, Volume 113, Issue 18, p. 184503
Journal Article
IEEE electron device letters, ISSN 0741-3106, 03/2016, Volume 37, Issue 3, pp. 317 - 320
Insulated gate bipolar transistors | Temperature | Silicon carbide | Logic gates | insulated gate bipolar transistor (IGBT) | high voltage | Threshold voltage | JFETs | Silicon carbide (SiC) | Substrates | free-standing 4H-SiC substrate | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology
Journal Article
IEEE transactions on electron devices, ISSN 0018-9383, 03/2018, Volume 65, Issue 3, pp. 820 - 828
Resistance | Bipolar transistors | Base resistance | Current measurement | parameter extraction | Doping | compact modeling | Transistors | Electrical resistance measurement | bipolar transistor tetrode | Silicon germanium | SiGe heterojunction bipolar transistor (HBT) | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied
Journal Article
Russian electrical engineering, ISSN 1068-3712, 02/2017, Volume 88, Issue 2, pp. 77 - 80
Journal Article
IEEE transactions on electron devices, ISSN 0018-9383, 04/2012, Volume 59, Issue 4, pp. 1023 - 1029
Gated resistor | scaling | junctionless transistor (JLT) | Doping | Tunneling | Logic gates | Silicon | Leakage current | Transistors | Junctions | tunneling | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied | Electronics | Applied sciences | Electronic equipment and fabrication. Passive components, printed wiring boards, connectics | Exact sciences and technology | Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices | Bipolar transistors | Usage | Analysis | Innovations | Electron mobility | Tunneling (Physics) | Mathematical optimization | Semiconductor doping | Methods | Semiconductor devices | Drains | Devices | Channels | Guidelines
Journal Article
Microwave and optical technology letters, ISSN 0895-2477, 02/2019, Volume 61, Issue 2, pp. 550 - 555
power amplifier | indium phosphide | power combining | double heterojunction bipolar transistor | stacked transistor | Engineering, Electrical & Electronic | Engineering | Optics | Physical Sciences | Technology | Science & Technology | Integrated circuits | Power combiners | Semiconductor devices | Phosphides | Power amplifiers | Bandwidth | Coplanar waveguides | Heterojunction bipolar transistors | Transistors
Journal Article
1991, Artech House microwave library., ISBN 0890064016, xii, 377
Book
IEEE transactions on industrial electronics (1982), ISSN 0278-0046, 03/2021, Volume 68, Issue 3, pp. 2608 - 2616
Performance evaluation | MOSFET | Temperature | junction field-effect transistor (JFET) | reliability | short-circuit (SC) currents | device simulation | Circuit faults | failure analysis | silicon carbide (SiC) | Silicon carbide | Bipolar junction transistor (BJT) | JFETs | Integrated circuit modeling | metal-oxide semiconductor field-effect transistors (MOSFET)
Journal Article
IEEE transactions on electron devices, ISSN 0018-9383, 03/2020, Volume 67, Issue 3, pp. 944 - 948
Journal Article
IEEE transactions on electron devices, ISSN 0018-9383, 04/2012, Volume 59, Issue 4, pp. 962 - 967
Electrodes | complementary metal-oxide-semiconductor (CMOS) technology | Bipolar transistors | Electron traps | Metals | current gain | simulation | Silicon | Semiconductor process modeling | Bipolar charge-plasma transistor (BCPT) | Transistors | silicon-on-insulator (SOI) | complementary metal-oxide- semiconductor (CMOS) technology | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied | Integrated circuits | Exact sciences and technology | Surface double layers, schottky barriers, and work functions | Electronics | Applied sciences | Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures | Condensed matter: electronic structure, electrical, magnetic, and optical properties | Design. Technologies. Operation analysis. Testing | Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices | Measurement | Thermal properties | Storage media | Usage | Ohm's law | Ruthenium | Optical properties | Innovations | Electric resistance | Technology application | Plasma devices | Semiconductor doping | Methods | Simulation methods | Collectors | Semiconductor devices | Simulation | Doping | Activation | Devices
Journal Article
Applied physics letters, ISSN 0003-6951, 05/2015, Volume 106, Issue 20, p. 203505
Physical Sciences | Physics | Science & Technology | Physics, Applied | Amplification | Dissipation factor | Semiconductor devices | Energy dissipation | Circuits | Liquid helium | Single-electron transistors | Silicon | Frequency response | Heterojunction bipolar transistors | Transistors | Electrons | Physics - Mesoscale and Nanoscale Physics | INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Journal Article
IEEE transactions on electron devices, ISSN 0018-9383, 10/2019, Volume 66, Issue 10, pp. 4354 - 4360
Electrodes | ISFET | Bipolar transistors | Doping | Logic gates | sensor | Transistors | Junctions | Bipolar devices | bipolar junction transistor (BJT) | Substrates | MOS devices | Bipolardevices | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied
Journal Article
Superlattices and microstructures, ISSN 0749-6036, 07/2015, Volume 86, pp. 1 - 19
InGaAs | Bipolar transistors | Composite channel | Noise figure (NF) | HEMT | InAs | InP | Hetero junction bipolar transistors (HBTs) | Physics, Condensed Matter | Physical Sciences | Physics | Science & Technology | Circuit components | Transistors | Chemical vapor deposition | Electrical conductivity | Semiconductors | Equipment and supplies | Dielectrics | Electric properties | Fiber optics
Journal Article
IEEE transactions on electron devices, ISSN 0018-9383, 11/2020, Volume 67, Issue 11, pp. 4770 - 4776
Solid modeling | MOSFET | terahertz (THz) | high frequency | EM simulation | thru-reflect-line (TRL) | Frequency measurement | Calibration | millimeter-wave | on-wafer | s-parameter measurement | high-current model (bipolar transistor circuits) (HICUM) | compact model | f MAX)">maximum oscillation frequency (f MAX) | Scattering parameters | Heterojunction bipolar transistors | high electron mobility transistor (HEMT) | Probes | heterojunction bipolar transistor (HBT) | de-embedding | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied | Engineering Sciences | Micro and nanotechnologies | Microelectronics
Journal Article
1996, ISBN 3883224863, 298
Book
Electronics letters, ISSN 0013-5194, 5/2019, Volume 55, Issue 9, pp. 521 - 523
Circuits and systems | submillimetre wave transistors | common emitter shunt–shunt feedback topology | common base topology | indium compounds | frequency 520.0 GHz | TIA design | microwave photonics | power 25.5 mW | eye diagram measurements | transimpedance amplifier circuits | power consumption | bandwidth 133.0 GHz | indium phosphide double heterojunction bipolar transistor technology | III‐V semiconductors | fibre optical interconnect systems | operational amplifiers | time domains | transimpedance gain | circuit feedback | frequency‐domain analysis | frequency domains | InP | CB topology | heterojunction bipolar transistors | time‐domain analysis | size 130.0 nm | optical interconnections | input impedance | power 32.3 mW | optical fibre amplifiers | submillimetre wave amplifiers | wide band gap semiconductors | frequency response | frequency 1.15 THz | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology | Signalbehandling | Other Electrical Engineering, Electronic Engineering, Information Engineering | Signal Processing | Annan elektroteknik och elektronik
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