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1. Full Text Bipolar Junction Transistors: Van der Waals Bipolar Junction Transistor Using Vertically Stacked Two‐Dimensional Atomic Crystals (Adv. Funct. Mater. 17/2019)
by Liu, Liwei and Xu, Ningsheng and Zhang, Yu and Zhao, Peng and Chen, Huanjun and Deng, Shaozhi
Advanced functional materials, ISSN 1616-301X, 04/2019, Volume 29, Issue 17, pp. 1970113 - n/a
vertical stacking | gas sensor | van der Waals force | bipolar junction transistor | MoS2/WSe2/MoS2 heterostructure | Circuit components | Transistors | Junction transistors | Molybdenum disulfide | Semiconductor devices | Power amplifiers | Atomic properties | Two dimensional materials | Gas sensors | Heterostructures
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2. The IGBT device
: physics, design and applications of the insulated gate bipolar transistor
by Baliga, B. Jayant, 1948
2015, ISBN 9781455731435, xxxi, 699
Insulated gate bipolar transistors | Reliability
Book
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3. Full Text Single transistor latch phenomenon in junctionless transistors
by Singh Parihar, Mukta and Ghosh, Dipankar and Kranti, Abhinav
Journal of applied physics, ISSN 0021-8979, 05/2013, Volume 113, Issue 18, p. 184503
Physical Sciences | Physics | Science & Technology | Physics, Applied | Measurement | Bipolar transistors | Ionization | Analysis | Innovations | Semiconductor doping | Methods | Surface energy
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4. Full Text 4H-SiC n-Channel Insulated Gate Bipolar Transistors on (0001) and (000-1) Oriented Free-Standing n− Substrates
by Chowdhury, Sauvik and Hitchcock, Collin and Stum, Zachary and Dahal, Rajendra and Bhat, Ishwara B and Chow, T. Paul
IEEE electron device letters, ISSN 0741-3106, 03/2016, Volume 37, Issue 3, pp. 317 - 320
Insulated gate bipolar transistors | Temperature | Silicon carbide | Logic gates | insulated gate bipolar transistor (IGBT) | high voltage | Threshold voltage | JFETs | Silicon carbide (SiC) | Substrates | free-standing 4H-SiC substrate | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology
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5. Full Text Analysis of the Transistor Tetrode-Based Determination of the Base Resistance Components of Bipolar Transistors-A Review
by Schroter, Michael and Pawlak, Andreas
IEEE transactions on electron devices, ISSN 0018-9383, 03/2018, Volume 65, Issue 3, pp. 820 - 828
Resistance | Bipolar transistors | Base resistance | Current measurement | parameter extraction | Doping | compact modeling | Transistors | Electrical resistance measurement | bipolar transistor tetrode | Silicon germanium | SiGe heterojunction bipolar transistor (HBT) | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied
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6. Full Text A comparison of time-average power losses in insulated-gate bipolar transistors and hybrid SIT–MOS–transistors
by Kyuregyan, A.S and Gorbatyuk, A.V and Ivanov, B.V
Russian electrical engineering, ISSN 1068-3712, 02/2017, Volume 88, Issue 2, pp. 77 - 80
comparative analysis | static and switching characteristics | insulated-gate bipolar transistors | static induction thyristors | average power loss | Power loss | Metal oxide semiconductors
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7. Full Text Effect of Band-to-Band Tunneling on Junctionless Transistors
by Gundapaneni, S and Bajaj, M and Pandey, R. K and Murali, K. V. R. M and Ganguly, S and Kottantharayil, A
IEEE transactions on electron devices, ISSN 0018-9383, 04/2012, Volume 59, Issue 4, pp. 1023 - 1029
Gated resistor | scaling | junctionless transistor (JLT) | Doping | Tunneling | Logic gates | Silicon | Leakage current | Transistors | Junctions | tunneling | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied | Electronics | Applied sciences | Electronic equipment and fabrication. Passive components, printed wiring boards, connectics | Exact sciences and technology | Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices | Bipolar transistors | Usage | Analysis | Innovations | Electron mobility | Tunneling (Physics) | Mathematical optimization | Semiconductor doping | Methods | Semiconductor devices | Drains | Devices | Channels | Guidelines
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8. Full Text E‐band Indium Phosphide double heterojunction bipolar transistor monolithic microwave‐integrated circuit power amplifier based on stacked transistors
by Squartecchia, Michele and Johansen, Tom K and Dupuy, Jean‐Yves and Nodjiadjim, Virginie and Midili, Virginio and Riet, Muriel and Konczykowska, Agnieszka
Microwave and optical technology letters, ISSN 0895-2477, 02/2019, Volume 61, Issue 2, pp. 550 - 555
power amplifier | indium phosphide | power combining | double heterojunction bipolar transistor | stacked transistor | Engineering, Electrical & Electronic | Engineering | Optics | Physical Sciences | Technology | Science & Technology | Integrated circuits | Power combiners | Semiconductor devices | Phosphides | Power amplifiers | Bandwidth | Coplanar waveguides | Heterojunction bipolar transistors | Transistors
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9. HEMTs and HBTs
: devices, fabrication, and circuits
by Ali, Fazal and Gupta, Aditya Kumar, 1952
1991, Artech House microwave library., ISBN 0890064016, xii, 377
Bipolar transistors | Modulation-doped field-effect transistors
Book
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10. Full Text Comparison of Thermal Stress During Short-Circuit in Different Types of 1.2-kV SiC Transistors Based on Experiments and Simulations
by Sadik, Diane-Perle and Colmenares, Juan and Lim, Jang-Kwon and Bakowski, Mietek and Nee, Hans-Peter
IEEE transactions on industrial electronics (1982), ISSN 0278-0046, 03/2021, Volume 68, Issue 3, pp. 2608 - 2616
Performance evaluation | MOSFET | Temperature | junction field-effect transistor (JFET) | reliability | short-circuit (SC) currents | device simulation | Circuit faults | failure analysis | silicon carbide (SiC) | Silicon carbide | Bipolar junction transistor (BJT) | JFETs | Integrated circuit modeling | metal-oxide semiconductor field-effect transistors (MOSFET)
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11. Full Text Vertical Inner Gate Transistors for 4F2 DRAM Cell
by Min, Kyung Kyu and Hwang, Sungmin and Lee, Jong-Ho and Park, Byung-Gook
IEEE transactions on electron devices, ISSN 0018-9383, 03/2020, Volume 67, Issue 3, pp. 944 - 948
4F2 dynamic random access memory (DRAM) cell transistor | DRAM | vertical gate (VG) transistor | transient bipolar effect (TBE) | floating body effect (FBE) | vertical cell array transistor
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12. Full Text Bipolar Charge-Plasma Transistor: A Novel Three Terminal Device
by Kumar, M. J and Nadda, K
IEEE transactions on electron devices, ISSN 0018-9383, 04/2012, Volume 59, Issue 4, pp. 962 - 967
Electrodes | complementary metal-oxide-semiconductor (CMOS) technology | Bipolar transistors | Electron traps | Metals | current gain | simulation | Silicon | Semiconductor process modeling | Bipolar charge-plasma transistor (BCPT) | Transistors | silicon-on-insulator (SOI) | complementary metal-oxide- semiconductor (CMOS) technology | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied | Integrated circuits | Exact sciences and technology | Surface double layers, schottky barriers, and work functions | Electronics | Applied sciences | Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures | Condensed matter: electronic structure, electrical, magnetic, and optical properties | Design. Technologies. Operation analysis. Testing | Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices | Measurement | Thermal properties | Storage media | Usage | Ohm's law | Ruthenium | Optical properties | Innovations | Electric resistance | Technology application | Plasma devices | Semiconductor doping | Methods | Simulation methods | Collectors | Semiconductor devices | Simulation | Doping | Activation | Devices
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13. Full Text Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor
by Curry, M.J and England, T.D and Bishop, N.C and Ten-Eyck, G and Wendt, J.R and Pluym, T and Lilly, M.P and Carr, S.M and Carroll, M.S and Sandia National Lab. (SNL-NM), Albuquerque, NM (United States) and Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States
Applied physics letters, ISSN 0003-6951, 05/2015, Volume 106, Issue 20, p. 203505
Physical Sciences | Physics | Science & Technology | Physics, Applied | Amplification | Dissipation factor | Semiconductor devices | Energy dissipation | Circuits | Liquid helium | Single-electron transistors | Silicon | Frequency response | Heterojunction bipolar transistors | Transistors | Electrons | Physics - Mesoscale and Nanoscale Physics | INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
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14. Full Text Ion-Sensitive Gated Bipolar Transistor
by Hueting, R. J. E and Vincent, S. E. J and Bomer, J. G and Sanders, R. G. P and Olthuis, W
IEEE transactions on electron devices, ISSN 0018-9383, 10/2019, Volume 66, Issue 10, pp. 4354 - 4360
Electrodes | ISFET | Bipolar transistors | Doping | Logic gates | sensor | Transistors | Junctions | Bipolar devices | bipolar junction transistor (BJT) | Substrates | MOS devices | Bipolardevices | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied
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15. Full Text A review of InP/InAlAs/InGaAs based transistors for high frequency applications
by Ajayan, J and Nirmal, D
Superlattices and microstructures, ISSN 0749-6036, 07/2015, Volume 86, pp. 1 - 19
InGaAs | Bipolar transistors | Composite channel | Noise figure (NF) | HEMT | InAs | InP | Hetero junction bipolar transistors (HBTs) | Physics, Condensed Matter | Physical Sciences | Physics | Science & Technology | Circuit components | Transistors | Chemical vapor deposition | Electrical conductivity | Semiconductors | Equipment and supplies | Dielectrics | Electric properties | Fiber optics
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16. Full Text Analysis of High-Frequency Measurement of Transistors Along With Electromagnetic and SPICE Cosimulation
by Fregonese, Sebastien and Cabbia, Marco and Yadav, Chandan and Deng, Marina and Panda, Soumya Ranjan and De Matos, Magali and Celi, Didier and Chakravorty, Anjan and Zimmer, Thomas
IEEE transactions on electron devices, ISSN 0018-9383, 11/2020, Volume 67, Issue 11, pp. 4770 - 4776
Solid modeling | MOSFET | terahertz (THz) | high frequency | EM simulation | thru-reflect-line (TRL) | Frequency measurement | Calibration | millimeter-wave | on-wafer | s-parameter measurement | high-current model (bipolar transistor circuits) (HICUM) | compact model | f MAX)">maximum oscillation frequency (f MAX) | Scattering parameters | Heterojunction bipolar transistors | high electron mobility transistor (HEMT) | Probes | heterojunction bipolar transistor (HBT) | de-embedding | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied | Engineering Sciences | Micro and nanotechnologies | Microelectronics
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17. Transistor dictionary
: bipolar transistors : Datenvergleichstabellen = comparision [sic] tables = tables d'équivalence = tablas comparativas
by Welter, Michael
1996, ISBN 3883224863, 298
Bipolar transistors | Tables
Book
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18. Full Text Transimpedance amplifiers with 133 GHz bandwidth on 130 nm indium phosphide double heterojunction bipolar transistors
by Giannakopoulos, S and He, Z and Darwazeh, I and Zirath, H
Electronics letters, ISSN 0013-5194, 5/2019, Volume 55, Issue 9, pp. 521 - 523
Circuits and systems | submillimetre wave transistors | common emitter shunt–shunt feedback topology | common base topology | indium compounds | frequency 520.0 GHz | TIA design | microwave photonics | power 25.5 mW | eye diagram measurements | transimpedance amplifier circuits | power consumption | bandwidth 133.0 GHz | indium phosphide double heterojunction bipolar transistor technology | III‐V semiconductors | fibre optical interconnect systems | operational amplifiers | time domains | transimpedance gain | circuit feedback | frequency‐domain analysis | frequency domains | InP | CB topology | heterojunction bipolar transistors | time‐domain analysis | size 130.0 nm | optical interconnections | input impedance | power 32.3 mW | optical fibre amplifiers | submillimetre wave amplifiers | wide band gap semiconductors | frequency response | frequency 1.15 THz | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology | Signalbehandling | Other Electrical Engineering, Electronic Engineering, Information Engineering | Signal Processing | Annan elektroteknik och elektronik
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