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1991, Artech House microwave library., ISBN 0890064016, xii, 377
Book
1983, Reprinted with corrections, July 1983., ISBN 9780201053227, Volume 3., viii, 85
Book
Advanced Functional Materials, ISSN 1616-301X, 04/2019, Volume 29, Issue 17, pp. 1970113 - n/a
In article number 1807893, Shaozhi Deng and co‐workers present a study of Van der Waals bipolar junction transistors based on vertically stacked 2D materials... 
vertical stacking | gas sensor | van der Waals force | bipolar junction transistor | MoS2/WSe2/MoS2 heterostructure | Circuit components | Transistors | Junction transistors | Molybdenum disulfide | Semiconductor devices | Power amplifiers | Atomic properties | Two dimensional materials | Gas sensors | Heterostructures
Journal Article
2003, Springer series in advanced microelectronics, ISBN 354067702X, Volume 11, xx, 658
Book
1984, IEEE Press selected reprint series, ISBN 9780879421816, vi, 393
Book
2003, 1. Aufl., ISBN 9780470848388, 289
SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies.... 
Bipolar transistors | Germanium | Silicon | Electronics | General | Technology | Circuits
eBook
Proceedings of the National Academy of Sciences of the United States of America, ISSN 0027-8424, 6/2010, Volume 107, Issue 22, pp. 9929 - 9932
Journal Article
2015, ISBN 9781455731435, xxxi, 699
The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and... 
Insulated gate bipolar transistors | Electronics & communications engineering
Book
Nature Communications, ISSN 2041-1723, 2012, Volume 3, Issue 1, p. 871
Precise control over processing, transport and delivery of ionic and molecular signals is of great importance in numerous fields of life sciences. Integrated... 
CIRCUITS | MEMBRANES | MICROCHIP | RELEASE | MULTIDISCIPLINARY SCIENCES | BIPOLAR | Transistors, Electronic
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 05/2013, Volume 113, Issue 18, p. 184503
In this work, we report on the single transistor latch phenomenon in junctionless transistors. In the latch condition, the device is unable to turn-off despite... 
RATES | PHYSICS, APPLIED | SOI MOSFETS | SILICON | SUBTHRESHOLD CHARACTERISTICS | IMPACT IONIZATION | MODEL | NUMERICAL-SIMULATION | Measurement | Bipolar transistors | Ionization | Analysis | Innovations | Semiconductor doping | Methods | Surface energy
Journal Article
1999, Wiley series in microwave and optical engineering, ISBN 0471197467, xvii, 463
Book
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2018, Volume 65, Issue 3, pp. 820 - 828
Journal Article
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