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ACS Nano, ISSN 1936-0851, 04/2011, Volume 5, Issue 4, pp. 2629 - 2636
Journal Article
IEEE Transactions on Circuits and Systems I: Regular Papers, ISSN 1549-8328, 11/2016, Volume 63, Issue 11, pp. 1807 - 1815
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 12/2015, Volume 62, Issue 6, pp. 2860 - 2866
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 12/2019, Volume 66, Issue 12, pp. 5230 - 5237
Dark count rate (DCR) increase in CMOS single-photon avalanche diodes (SPADs) exposed to a nonmonochromatic neutron source is modeled, taking into account the... 
Geometry | Radiation effects | CMOS single-photon avalanche diode (SPAD) | Bulk damage | dark count noise | Scattering | Neutrons | Silicon | Junctions | TARGET | PHYSICS, APPLIED | SILICON PHOTOMULTIPLIERS | radiation effects | PARTICLE DISPLACEMENT DAMAGE | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IET Circuits, Devices & Systems, ISSN 1751-858X, 11/2013, Volume 7, Issue 6, pp. 352 - 360
A new solution for a low-voltage bulk-driven CMOS operational amplifier is presented in this study. The amplifier is designed using 50 nm process parameters... 
DESIGN | LOAD | NESTED MILLER COMPENSATION | voltage 0 | power 100 muW | 5 V | noise performance | ENGINEERING, ELECTRICAL & ELECTRONIC | low-voltage bulk-driven CMOS operational amplifier | common-mode amplifiers | size 50 nm | INPUT STAGE | operational amplifiers | CMOS integrated circuits | low-power electronics | gain 74 dB | BODY | OTA | RANGE | PAIR
Journal Article
International Journal of Circuit Theory and Applications, ISSN 0098-9886, 08/2017, Volume 45, Issue 8, pp. 1077 - 1094
Summary A new solution for an ultra low voltage bulk‐driven programmable gain amplifier (PGA) is described in the paper. While implemented in a standard n‐well... 
low voltage | low power | variable gain amplifier | sub 0.5‐V circuits | bulk driven | programmable gain amplifier | sub 0.5-V circuits | Metal oxides | Amplification | CMOS | Low voltage | Noise levels | Power consumption | Voltage gain | Dynamic range | Thermal noise | Gain
Journal Article
IEEE Microwave and Wireless Components Letters, ISSN 1531-1309, 05/2019, Volume 29, Issue 5, pp. 342 - 344
This letter presents a world-first 300-GHz amplifier in 65-nm standard bulk CMOS (1P9M GP). The amplifier has gain from 273 to 301 GHz, and the peak gain is 21... 
Capacitors | subterahertz | Metals | bulk CMOS | low-loss passives | Resistance | layout optimization | Layout | 300 GHz | Logic gates | positive feedback (PF) | amplifier | Transistors | Gain | ENGINEERING, ELECTRICAL & ELECTRONIC | Amplification | CMOS | Power consumption | Layouts | Fingers | Amplifiers | Amplifier design | Topology
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 08/2014, Volume 61, Issue 4, pp. 1575 - 1582
Journal Article
IEEE Transactions on Circuits and Systems I: Regular Papers, ISSN 1549-8328, 06/2014, Volume 61, Issue 6, pp. 1609 - 1617
Journal Article
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, ISSN 1063-8210, 02/2019, Volume 27, Issue 2, pp. 316 - 325
Journal Article
AEUE - International Journal of Electronics and Communications, ISSN 1434-8411, 07/2017, Volume 77, pp. 67 - 75
The paper deals with a new solution for an ultra-low-voltage loser take all (LTA) circuit, capable to operate from supply voltages ranging from 0.3 to 0.5 V.... 
Loser take all | Bulk-driven | Low-voltage | Winner take all | Voltage follower | Min/Max circuits | Low-power
Journal Article
INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, ISSN 0098-9886, 06/2018, Volume 46, Issue 6, pp. 1129 - 1143
A family of bulk-driven CMOS operational transconductance amplifiers (OTAs) has been designed for extremely low supply voltages (0.3-0.5V). Three OTA design... 
truly differential amplifiers | OPERATIONAL-AMPLIFIER | CASCODE AMPLIFIER | operational transconductance amplifiers | STAGE | low voltage | low power | SUBTHRESHOLD | OPAMP | bulk driven | ENGINEERING, ELECTRICAL & ELECTRONIC | Amplifiers (Electronics) | Complementary metal oxide semiconductors
Journal Article
IEEE Transactions on Circuits and Systems II: Express Briefs, ISSN 1549-7747, 07/2015, Volume 62, Issue 7, pp. 621 - 625
Journal Article
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, ISSN 1063-8210, 12/2017, Volume 25, Issue 12, pp. 3455 - 3463
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2015, Volume 36, Issue 2, pp. 153 - 155
We propose a way to achieve high-speed circuits with dual-gate (DG) bulk-accumulation back-channeletched (BCE) amorphous indium-gallium-zinc-oxide (a-IGZO)... 
Ring oscillators | Barium | a-IGZO TFTs | bulk accumulation | pseudo-CMOS | Logic gates | Inverters | Thin film transistors | Delays | ring oscillator | GATE OFFSET STRUCTURE | INSTABILITY | ILLUMINATION | THIN-FILM TRANSISTORS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article