X
Search Filters
Format Format
Subjects Subjects
Subjects Subjects
X
Sort by Item Count (A-Z)
Filter by Count
c-plane sapphire (115) 115
physics, applied (99) 99
materials science, multidisciplinary (67) 67
molecular-beam epitaxy (53) 53
sapphire (44) 44
c-plane (43) 43
growth (42) 42
thin-films (42) 42
epitaxy (36) 36
thin films (35) 35
gan (34) 34
physics, condensed matter (34) 34
zinc oxide (32) 32
crystallography (26) 26
saphir (26) 26
deposition (24) 24
films (23) 23
optical properties (23) 23
saphirsubstrat (23) 23
layers (21) 21
materials science, coatings & films (19) 19
photoluminescence (19) 19
chemical-vapor-deposition (18) 18
analysis (17) 17
chemical vapor deposition (17) 17
mocvd (17) 17
optical-properties (17) 17
temperature (17) 17
engineering, electrical & electronic (16) 16
substrate (16) 16
epitaxial growth (15) 15
photolumineszenz (15) 15
sauerstoff (15) 15
dielectric films (14) 14
gallium nitrides (14) 14
molecular beam epitaxy (14) 14
substrates (14) 14
annealing (13) 13
chemistry, physical (13) 13
dünnfilm (13) 13
pulsed-laser deposition (13) 13
nanoscience & nanotechnology (12) 12
zno (12) 12
crystals (11) 11
galliumoxid (11) 11
halbleiter mit grosser energielücke (11) 11
light-emitting-diodes (11) 11
nanostructure (11) 11
quality (11) 11
aluminum nitride (10) 10
gallium (10) 10
galliumnitrid (10) 10
materials science (10) 10
nanowires (10) 10
surface (10) 10
algan (9) 9
aln (9) 9
dünnschicht (9) 9
fabrication (9) 9
halbleiterepitaxialschicht (9) 9
liquors (9) 9
metallorganische gasphasenabscheidung (9) 9
molekularstrahlepitaxie (9) 9
morphology (9) 9
research (9) 9
vapor-phase epitaxy (9) 9
x-ray diffraction (9) 9
zinc-oxide (9) 9
zinkoxid (9) 9
zwei-sechs-verbindung (9) 9
aluminiumnitrid (8) 8
atomic force microscopy (8) 8
beta-ga2o3 (8) 8
c-plane sapphire substrates (8) 8
chemistry, multidisciplinary (8) 8
crystal structure (8) 8
electric properties (8) 8
electrical-properties (8) 8
ga2o3 (8) 8
gallium nitride (8) 8
halbleiterwachstum (8) 8
kristallqualität (8) 8
nitrides (8) 8
structure (8) 8
aluminiumoxid (7) 7
devices (7) 7
diffusion (7) 7
drei-fünf-verbindung (7) 7
luminescence (7) 7
movpe (7) 7
raman spectroscopy (7) 7
röntgenbeugung (7) 7
silicon (7) 7
buffer layer (6) 6
c-plane gan (6) 6
dislocations (6) 6
electron-mobility (6) 6
elektronenmikroskopie (6) 6
epitaxial-growth (6) 6
epitaxialwachstum (6) 6
more...
Language Language
Publication Date Publication Date
Click on a bar to filter by decade
Slide to change publication date range


Applied Physics Letters, ISSN 0003-6951, 09/2016, Volume 109, Issue 13, p. 132103
This paper presents the heteroepitaxial growth of ultrawide bandgap β-Ga2O3 thin films on c-plane sapphire substrates by low pressure chemical vapor... 
SINGLE-CRYSTALS | PHYSICS, APPLIED | GROWTH TEMPERATURE | C-PLANE | PHOTODETECTORS | LUMINESCENCE | MOLECULAR-BEAM EPITAXY | PHASE EPITAXY | MOVPE | EDGE | LAYERS
Journal Article
Vacuum, ISSN 0042-207X, 06/2017, Volume 140, pp. 106 - 110
A vacuum annealing was conducted on c-plane sapphire substrate in a plasma-assisted MBE system prior to the epitaxial growth of β-Ga O film. Accordingly, both... 
Molecular beam epitaxy | Vaccum annealing | Solar-blind deep-ultraviolet photodetector | Sapphire substrate | β-Ga2O3 | β-Ga | THIN-FILMS | PHYSICS, APPLIED | C-PLANE | MATERIALS SCIENCE, MULTIDISCIPLINARY | DETECTORS | GROWTH | SURFACE | FABRICATION | NANOWIRES | beta-Ga2O3
Journal Article
Optical Materials, ISSN 0925-3467, 01/2016, Volume 51, pp. 203 - 207
Gallium oxide thin films were grown on c-plane sapphire substrate by molecular beam epitaxy. The homo-self-templated buffer layer was introduced for the... 
Thin films | Molecular beam epitaxy | Ultraviolet photodetector | Gallium oxide | C-PLANE | GAN | MATERIALS SCIENCE, MULTIDISCIPLINARY | MOLECULAR-BEAM EPITAXY | GROWTH | ULTRAVIOLET PHOTODETECTORS | NANOSTRUCTURES | OPTICS
Journal Article
physica status solidi (b), ISSN 0370-1972, 09/2015, Volume 252, Issue 9, pp. 2117 - 2122
We have used X‐ray pole figure analysis to study crystal orientations of β‐Ga2O3 thin films deposited on (113) n‐plane sapphire substrates by gallium... 
Ga2O3 | crystals | sapphire | thin films | PHYSICS, CONDENSED MATTER | SINGLE-CRYSTALS | C-PLANE | MOLECULAR-BEAM EPITAXY | GROWTH
Journal Article
physica status solidi (b), ISSN 0370-1972, 03/2015, Volume 252, Issue 3, pp. 612 - 620
We have used X‐ray pole figure analyses to study crystal orientations of β‐Ga2O3 thin films formed on (100) m‐plane or (102) r‐plane sapphire substrates... 
Ga2O3 | crystals | sapphire | thin films | Thin films | Sapphire | Crystals | PHYSICS, CONDENSED MATTER | SINGLE-CRYSTALS | ZNO FILMS | C-PLANE | GAN | MOLECULAR-BEAM EPITAXY | GROWTH | STRUCTURAL-CHARACTERIZATION
Journal Article
APPLIED OPTICS, ISSN 1559-128X, 05/2019, Volume 58, Issue 13, pp. D22 - D27
We report on tin gallium oxide ((SnxGa1-x )(2)O-3) solar-blind metal-semiconductor-metal (MSM) photodetectors grown by plasma-assisted molecular beam epitaxy... 
C-PLANE | DETECTORS | OPTICS | Gallium oxides | Sapphire | Photometers | Tin | Molecular beam epitaxy | Epitaxial growth | Substrates
Journal Article
CrystEngComm, ISSN 1466-8033, 2019, Volume 21, Issue 12, pp. 2009 - 2017
A smooth and dense surface of single-crystalline aluminium nitride thin films has been epitaxially grown on (0 0 0 1)-sapphire substrates by tailoring and... 
Journal Article
International Journal of Machine Tools and Manufacture, ISSN 0890-6955, 08/2018, Volume 130-131, pp. 12 - 19
A novel surface finish process sequence has been developed with a sequential process employing sol-gel (SG) semi-fixed abrasive polishing tool and gas-liquid... 
Gas-liquid assisted chemical mechanical polishing | Sub-surface damage | Material removal rate | Sapphire | SG polishing | VIBRATION | Gas-liquid assisted chemical mechanical | SIZE | C-PLANE SAPPHIRE | REMOVAL MECHANISMS | ENGINEERING, MECHANICAL | TRANSITION | GRAIN | SUBSTRATE | 2-BODY | polishing | GROWTH | SILICA | ENGINEERING, MANUFACTURING | Hardness | Mechanical engineering | Innovations
Journal Article
International Journal of Machine Tools and Manufacture, ISSN 0890-6955, 01/2013, Volume 64, pp. 38 - 48
Journal Article
Materials Letters, ISSN 0167-577X, 03/2014, Volume 119, pp. 123 - 126
We investigated heteroepitaxial growth of multidomain Ga O thin films deposited using radio frequency magnetron sputtering onto sapphire(001) substrates. The... 
α-Ga2O3 | RF sputtering | Epitaxy | β-Ga2O3 | β-Ga | alpha;-Ga | SAPPHIRE | PHYSICS, APPLIED | CHEMICAL-VAPOR-DEPOSITION | C-PLANE | MATERIALS SCIENCE, MULTIDISCIPLINARY | alpha-Ga2O3 | STRUCTURAL EVOLUTION | OPTICAL-PROPERTIES | X-RAY-SCATTERING | beta-Ga2O3
Journal Article
Journal Article
physica status solidi (c), ISSN 1862-6351, 11/2013, Volume 10, Issue 11, pp. 1529 - 1532
High‐efficiency green‐yellow InGaN‐based light‐emitting diodes (LEDs) were grown by metal organic chemical vapor deposition on conventional c‐plane sapphire... 
c‐plane sapphire substrates | green‐yellow InGaN LED | green‐yellow gap | high‐efficiency | Green-yellow InGaN LED | High-efficiency | C-plane sapphire substrates | Green-yellow gap | Crystals
Journal Article
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, ISSN 0021-4922, 11/2007, Volume 46, Issue 11, pp. 7217 - 7220
((2) over bar 01)-oriented beta-Ga2O3 thin films were grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. In-plane X-ray... 
Deep-ultraviolet photodetector | Molecular beam epitaxy | c-plane sapphire | molecular beam epitaxy | UV-DETECTOR | PHYSICS, APPLIED | ELECTRICAL-PROPERTIES | Ga2O3 | ZNO | deep-ultraviolet photodetector
Journal Article
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, ISSN 2166-2746, 2013, Volume 31, Issue 2
TiO2 thin films are prepared on c-plane sapphire substrates by the RF magnetron sputtering method. The performance of the Pt contact metal-semiconductor-metal... 
NANOSCIENCE & NANOTECHNOLOGY | PHYSICS, APPLIED | PHOTODIODES | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Applied Surface Science, ISSN 0169-4332, 06/2010, Volume 256, Issue 17, pp. 5406 - 5411
We have carried out streaming current measurements of sapphire c-plane single crystals in contact with the solutions containing the Al -ε-Keggin ions at... 
Single crystals | ESI-MS | Zeta-potential | Isoelectric point | Speciation | Sapphire c-plane | Adsorption | Aluminum | Sapphire | Surface chemistry | Clusters | pH | Evolution | Contact | Al13 | Naturvetenskap | Kemi | Natural Sciences | Chemical Sciences
Journal Article
Frontiers of Physics, ISSN 2095-0462, 4/2019, Volume 14, Issue 2, pp. 1 - 8
Journal Article
physica status solidi (c), ISSN 1862-6351, 04/2014, Volume 11, Issue 3‐4, pp. 628 - 631
High‐efficiency yellow InGaN‐based light‐emitting diodes (LEDs) were grown by metal‐organic chemical vapor deposition on conventional c‐plane sapphire (0001)... 
yellow InGaN LED | c‐plane sapphire substrates | green‐yellow gap | high‐efficiency | High-efficiency | C-plane sapphire substrates | Green-yellow gap | Yellow InGaN LED | Quantum efficiency | Sapphire | Direct current | Solid state physics | Light-emitting diodes | Inclusions | Chemical vapor deposition | Optimization
Journal Article
No results were found for your search.

Cannot display more than 1000 results, please narrow the terms of your search.