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Applied Physics Letters, ISSN 0003-6951, 12/2011, Volume 99, Issue 25, pp. 253506 - 253506-3
The reverse leakage current of a GaInN light-emitting diode (LED) is analyzed by temperature dependent current-voltage measurements. At low temperature, the... 
CAPACITANCE-VOLTAGE | PHYSICS, APPLIED | HOPPING CONDUCTION | GAN | SEMICONDUCTORS
Journal Article
ACS Nano, ISSN 1936-0851, 01/2016, Volume 10, Issue 1, pp. 218 - 224
Journal Article
Small (Weinheim an der Bergstrasse, Germany), ISSN 1613-6810, 2014, Volume 10, Issue 8, pp. 1555 - 1565
Journal Article
Solar energy, ISSN 0038-092X, 2012, Volume 86, Issue 5, pp. 1539 - 1545
► Nanostructured thin film of tin disulfide (SnS2) was deposited on p-silicon substrate using sol–gel spin technique. ► The ideality factor and barrier height... 
Tin disulfide | Current–voltage | Photoresponse | Capacitance–voltage | Sol–gel | Schottky diode | ENERGY & FUELS | Sol-gel | DEPOSITION | ELECTRICAL-PROPERTIES | INTERFACE | TEMPERATURE | GROWTH | Capacitance-voltage | Current-voltage | ZNO | SNS THIN-FILMS
Journal Article
Nature (London), ISSN 1476-4687, 2011, Volume 479, Issue 7373, pp. 317 - 323
Journal Article
Journal of Physics and Chemistry of Solids, ISSN 0022-3697, 04/2018, Volume 115, pp. 283 - 288
In this study, a crystalline n-PbTe/p-GaP heterojunction was fabricated using the electron beam deposition technique. The structural properties of the prepared... 
Photovoltaic | PbTe | GaP | Electron beam | Current–voltage | Capacitance–voltage | Heterojunction | THIN-FILMS | PHYSICS, CONDENSED MATTER | THERMOELECTRIC-MATERIALS | CHEMISTRY, MULTIDISCIPLINARY | EPITAXY | FLASH EVAPORATION | PHOTODETECTORS | GROWTH | DIODE-LASERS | SURFACE | Capacitance-voltage | Current-voltage | PHOTOVOLTAIC PROPERTIES | Thin films | Dielectric films | Electron microscopy | Methods
Journal Article